FR3012666A1 - - Google Patents

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Publication number
FR3012666A1
FR3012666A1 FR1360674A FR1360674A FR3012666A1 FR 3012666 A1 FR3012666 A1 FR 3012666A1 FR 1360674 A FR1360674 A FR 1360674A FR 1360674 A FR1360674 A FR 1360674A FR 3012666 A1 FR3012666 A1 FR 3012666A1
Authority
FR
France
Prior art keywords
trenches
transistor
semiconductor layer
annealing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR1360674A
Other languages
English (en)
French (fr)
Inventor
Denis Rideau
Emmanuel Josse
Olivier Nier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Priority to FR1360674A priority Critical patent/FR3012666A1/fr
Priority to US14/526,005 priority patent/US9305828B2/en
Publication of FR3012666A1 publication Critical patent/FR3012666A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/796—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
FR1360674A 2013-10-31 2013-10-31 Withdrawn FR3012666A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1360674A FR3012666A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2013-10-31 2013-10-31
US14/526,005 US9305828B2 (en) 2013-10-31 2014-10-28 Method of forming stressed SOI layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1360674A FR3012666A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2013-10-31 2013-10-31

Publications (1)

Publication Number Publication Date
FR3012666A1 true FR3012666A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2015-05-01

Family

ID=50069109

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1360674A Withdrawn FR3012666A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2013-10-31 2013-10-31

Country Status (2)

Country Link
US (1) US9305828B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR3012666A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3012667A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3041145B1 (fr) * 2015-09-11 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'une structure de canal de transistor en contrainte uni-axiale
KR102501097B1 (ko) 2018-06-21 2023-02-16 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700416B1 (en) * 2008-04-25 2010-04-20 Acorn Technologies, Inc. Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer
US20120049280A1 (en) * 2010-08-27 2012-03-01 Acorn Technologies, Inc. Strained Semiconductor Using Elastic Edge Relaxation Of A Stressor Combined With Buried Insulating Layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0152345B1 (ko) * 1995-06-14 1998-10-01 김광호 혼성 쇼트키 주입 전계 효과 트랜지스터
US5902128A (en) 1996-10-17 1999-05-11 Micron Technology, Inc. Process to improve the flow of oxide during field oxidation by fluorine doping
JP2005183686A (ja) 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
US7727856B2 (en) 2006-12-24 2010-06-01 Chartered Semiconductor Manufacturing, Ltd. Selective STI stress relaxation through ion implantation
US7704818B2 (en) 2007-09-04 2010-04-27 Dongbu Hitek Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN102456577B (zh) 2010-10-29 2014-10-01 中国科学院微电子研究所 应力隔离沟槽半导体器件的形成方法
CN102412184B (zh) 2011-05-23 2014-03-12 上海华力微电子有限公司 离子注入调整隔离氧化物应力的浅沟槽隔离结构制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700416B1 (en) * 2008-04-25 2010-04-20 Acorn Technologies, Inc. Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer
US20120049280A1 (en) * 2010-08-27 2012-03-01 Acorn Technologies, Inc. Strained Semiconductor Using Elastic Edge Relaxation Of A Stressor Combined With Buried Insulating Layer

Also Published As

Publication number Publication date
US9305828B2 (en) 2016-04-05
US20150118824A1 (en) 2015-04-30

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Effective date: 20150630