FR2843229B1 - Cellule de memoire morte et procedes de programmation et de fabrication de celle-ci - Google Patents

Cellule de memoire morte et procedes de programmation et de fabrication de celle-ci

Info

Publication number
FR2843229B1
FR2843229B1 FR0309454A FR0309454A FR2843229B1 FR 2843229 B1 FR2843229 B1 FR 2843229B1 FR 0309454 A FR0309454 A FR 0309454A FR 0309454 A FR0309454 A FR 0309454A FR 2843229 B1 FR2843229 B1 FR 2843229B1
Authority
FR
France
Prior art keywords
programming
manufacturing
methods
same
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0309454A
Other languages
English (en)
Other versions
FR2843229A1 (fr
Inventor
Nak Woo Sung
Hyoung Yun Byun
Yong Jae Choo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2843229A1 publication Critical patent/FR2843229A1/fr
Application granted granted Critical
Publication of FR2843229B1 publication Critical patent/FR2843229B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/34—Source electrode or drain electrode programmed
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
FR0309454A 2002-08-01 2003-07-31 Cellule de memoire morte et procedes de programmation et de fabrication de celle-ci Expired - Fee Related FR2843229B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0045692A KR100470971B1 (ko) 2002-08-01 2002-08-01 리드 전용 메모리 셀, 이 셀의 프로그램 방법, 이 셀의레이아웃 방법, 및 이 셀을 구비한 리드 전용 메모리 장치

Publications (2)

Publication Number Publication Date
FR2843229A1 FR2843229A1 (fr) 2004-02-06
FR2843229B1 true FR2843229B1 (fr) 2005-10-07

Family

ID=30439416

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0309454A Expired - Fee Related FR2843229B1 (fr) 2002-08-01 2003-07-31 Cellule de memoire morte et procedes de programmation et de fabrication de celle-ci

Country Status (6)

Country Link
US (1) US6826070B2 (fr)
KR (1) KR100470971B1 (fr)
CN (1) CN100458976C (fr)
DE (1) DE10335385B9 (fr)
FR (1) FR2843229B1 (fr)
TW (1) TWI238416B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004020306B4 (de) * 2004-04-26 2006-06-01 Infineon Technologies Ag Verfahren zum Programmieren einer Speicheranordnung und programmierte Speicheranordnung
DE102004042105A1 (de) * 2004-08-30 2006-03-09 Infineon Technologies Ag ROM-Speicher
US7684244B2 (en) * 2007-05-16 2010-03-23 Atmel Corporation High density non-volatile memory array
US8134870B2 (en) * 2009-06-16 2012-03-13 Atmel Corporation High-density non-volatile read-only memory arrays and related methods
US7936578B2 (en) * 2009-08-28 2011-05-03 Arm Limited Read only memory cell for storing a multiple bit value
CN103106925B (zh) * 2013-01-04 2016-07-06 苏州兆芯半导体科技有限公司 串联rom单元及其读取方法
US9286998B1 (en) 2014-10-27 2016-03-15 Freescale Semiconductor,Inc. Read only memory having multi-bit line bit cell
US10453544B2 (en) * 2014-12-10 2019-10-22 Nxp Usa, Inc. Memory array with read only cells having multiple states and method of programming thereof
US9898568B2 (en) 2015-06-23 2018-02-20 Advanced Micro Devices, Inc. Reducing the load on the bitlines of a ROM bitcell array
JP6912163B2 (ja) * 2016-03-17 2021-07-28 日本電気株式会社 ファームウェア起動装置、ファームウェア起動方法、およびファームウェア起動プログラム
CN109390021B (zh) 2017-08-03 2022-05-03 联华电子股份有限公司 只读存储器
US11114175B1 (en) 2020-08-06 2021-09-07 Qualcomm Incorporated Systems and methods for providing a read only memory cell array
US11710698B2 (en) 2020-09-24 2023-07-25 Advanced Micro Devices, Inc. Dual-track bitline scheme for 6T SRAM cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03166762A (ja) * 1989-11-27 1991-07-18 Sony Corp 半導体メモリ
US5289406A (en) * 1990-08-28 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Read only memory for storing multi-data
JP3328463B2 (ja) * 1995-04-06 2002-09-24 株式会社日立製作所 並列型不揮発性半導体記憶装置及び同装置の使用方法
KR100199359B1 (ko) * 1996-07-05 1999-06-15 존 엠. 클라크 3세 고성능을 위한 세그먼트된 eprom 어레이 및 그를 제어하는 방법
JP3206591B2 (ja) * 1999-02-08 2001-09-10 日本電気株式会社 多値マスクｒｏｍおよび多値マスクｒｏｍの読み出し方法
US6438030B1 (en) * 2000-08-15 2002-08-20 Motorola, Inc. Non-volatile memory, method of manufacture, and method of programming
KR100468724B1 (ko) * 2001-04-18 2005-01-29 삼성전자주식회사 고속의 프로그래머블 롬 시스템 및 그를 위한 메모리 셀구조와 상기 프로그래머블 롬에서의 데이터 기록 및 독출방법
US6421267B1 (en) * 2001-04-24 2002-07-16 Macronix International Co., Ltd. Memory array architecture
FR2826170B1 (fr) * 2001-06-15 2003-12-12 Dolphin Integration Sa Memoire rom a points memoire multibit
US6618282B1 (en) * 2002-08-07 2003-09-09 National Semiconductor Corporation High density ROM architecture with inversion of programming

Also Published As

Publication number Publication date
FR2843229A1 (fr) 2004-02-06
KR20040012241A (ko) 2004-02-11
DE10335385A1 (de) 2004-02-26
US6826070B2 (en) 2004-11-30
DE10335385B4 (de) 2007-04-12
CN1477647A (zh) 2004-02-25
DE10335385B9 (de) 2007-07-26
TW200404299A (en) 2004-03-16
US20040022084A1 (en) 2004-02-05
TWI238416B (en) 2005-08-21
KR100470971B1 (ko) 2005-03-10
CN100458976C (zh) 2009-02-04

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Effective date: 20150331