FR2797347B1 - Procede de transfert d'une couche mince comportant une etape de surfragililisation - Google Patents

Procede de transfert d'une couche mince comportant une etape de surfragililisation

Info

Publication number
FR2797347B1
FR2797347B1 FR9910121A FR9910121A FR2797347B1 FR 2797347 B1 FR2797347 B1 FR 2797347B1 FR 9910121 A FR9910121 A FR 9910121A FR 9910121 A FR9910121 A FR 9910121A FR 2797347 B1 FR2797347 B1 FR 2797347B1
Authority
FR
France
Prior art keywords
surfragililization
transferring
thin film
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9910121A
Other languages
English (en)
French (fr)
Other versions
FR2797347A1 (fr
Inventor
Chrystelle Lagahe
Alain Soubie
Michel Bruel
Bernard Aspar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR9910121A priority Critical patent/FR2797347B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP00956612A priority patent/EP1203403A1/fr
Priority to KR1020027001366A priority patent/KR100742240B1/ko
Priority to PCT/FR2000/002239 priority patent/WO2001011667A1/fr
Priority to JP2001516228A priority patent/JP2003506892A/ja
Priority to MYPI20003580A priority patent/MY137329A/en
Priority to TW089115613A priority patent/TW457565B/zh
Publication of FR2797347A1 publication Critical patent/FR2797347A1/fr
Application granted granted Critical
Publication of FR2797347B1 publication Critical patent/FR2797347B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR9910121A 1999-08-04 1999-08-04 Procede de transfert d'une couche mince comportant une etape de surfragililisation Expired - Fee Related FR2797347B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR9910121A FR2797347B1 (fr) 1999-08-04 1999-08-04 Procede de transfert d'une couche mince comportant une etape de surfragililisation
KR1020027001366A KR100742240B1 (ko) 1999-08-04 2000-08-03 과깨짐 형성 단계를 포함하는 박막의 전달 방법
PCT/FR2000/002239 WO2001011667A1 (fr) 1999-08-04 2000-08-03 Procede de transfert d'une couche mince comportant une etape de surfragilisation
JP2001516228A JP2003506892A (ja) 1999-08-04 2000-08-03 過度の脆弱化ステップを有した薄層の移送方法
EP00956612A EP1203403A1 (fr) 1999-08-04 2000-08-03 Procede de transfert d'une couche mince comportant une etape de surfragilisation
MYPI20003580A MY137329A (en) 1999-08-04 2000-08-04 Process of transferring a thin layer including an over-weakening phase
TW089115613A TW457565B (en) 1999-08-04 2000-09-05 Method for transferring a thin layer comprising a step of excess fragilization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9910121A FR2797347B1 (fr) 1999-08-04 1999-08-04 Procede de transfert d'une couche mince comportant une etape de surfragililisation

Publications (2)

Publication Number Publication Date
FR2797347A1 FR2797347A1 (fr) 2001-02-09
FR2797347B1 true FR2797347B1 (fr) 2001-11-23

Family

ID=9548879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9910121A Expired - Fee Related FR2797347B1 (fr) 1999-08-04 1999-08-04 Procede de transfert d'une couche mince comportant une etape de surfragililisation

Country Status (7)

Country Link
EP (1) EP1203403A1 (ja)
JP (1) JP2003506892A (ja)
KR (1) KR100742240B1 (ja)
FR (1) FR2797347B1 (ja)
MY (1) MY137329A (ja)
TW (1) TW457565B (ja)
WO (1) WO2001011667A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8664084B2 (en) 2005-09-28 2014-03-04 Commissariat A L'energie Atomique Method for making a thin-film element
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
JP4277481B2 (ja) * 2002-05-08 2009-06-10 日本電気株式会社 半導体基板の製造方法、半導体装置の製造方法
FR2845517B1 (fr) * 2002-10-07 2005-05-06 Commissariat Energie Atomique Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur
FR2845518B1 (fr) * 2002-10-07 2005-10-14 Commissariat Energie Atomique Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur
FR2846788B1 (fr) * 2002-10-30 2005-06-17 Procede de fabrication de substrats demontables
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
JP4879737B2 (ja) * 2004-01-29 2012-02-22 ソワテク 半導体層の分離方法
ATE511210T1 (de) 2004-06-10 2011-06-15 Soitec Silicon On Insulator Verfahren für das herstellen eines soi wafers
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
JP5284576B2 (ja) * 2006-11-10 2013-09-11 信越化学工業株式会社 半導体基板の製造方法
KR101440930B1 (ko) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작방법
KR101447048B1 (ko) * 2007-04-20 2014-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 반도체장치의 제조방법
JP5367330B2 (ja) 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5339785B2 (ja) * 2008-06-03 2013-11-13 信越半導体株式会社 貼り合わせウェーハの製造方法
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US8524572B2 (en) * 2011-10-06 2013-09-03 Micron Technology, Inc. Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions
US9281233B2 (en) * 2012-12-28 2016-03-08 Sunedison Semiconductor Limited Method for low temperature layer transfer in the preparation of multilayer semiconductor devices
FR3055063B1 (fr) * 2016-08-11 2018-08-31 Soitec Procede de transfert d'une couche utile
FR3108787B1 (fr) * 2020-03-31 2022-04-01 Commissariat Energie Atomique Procédé basse température de transfert et de guérison d’une couche semi-conductrice

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
JP2001525991A (ja) * 1997-05-12 2001-12-11 シリコン・ジェネシス・コーポレーション 制御された劈開プロセス
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5909627A (en) * 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US8664084B2 (en) 2005-09-28 2014-03-04 Commissariat A L'energie Atomique Method for making a thin-film element
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer

Also Published As

Publication number Publication date
KR100742240B1 (ko) 2007-07-24
MY137329A (en) 2009-01-30
TW457565B (en) 2001-10-01
KR20020085868A (ko) 2002-11-16
FR2797347A1 (fr) 2001-02-09
JP2003506892A (ja) 2003-02-18
EP1203403A1 (fr) 2002-05-08
WO2001011667A1 (fr) 2001-02-15

Similar Documents

Publication Publication Date Title
FR2797347B1 (fr) Procede de transfert d'une couche mince comportant une etape de surfragililisation
FR2744285B1 (fr) Procede de transfert d'une couche mince d'un substrat initial sur un substrat final
FR2773261B1 (fr) Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2750796B1 (fr) Procede de fabrication d'un transistor en couche mince
GB2338343B (en) Method for fabricating thin film transistor
FR2725074B1 (fr) Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
FI950419A0 (fi) Tiedonsiirtomenetelmä
AU1432800A (en) Method for transferring information
DE69832732D1 (de) Bildübertragungsverfahren
DE19883007T1 (de) Method For Transferring Information
HK1209549A1 (en) Method for transferring image information
FR2747234B1 (fr) Procede de fabrication d'un transistor en couche mince, et transistor en couche mince
FI982258A (fi) Mekanismi verkon aloittamaa informaation lähetystä varten
FR2837620B1 (fr) Procede de transfert d'elements de substrat a substrat
AU2544900A (en) Method for fabricating thin film semiconductor devices
EP1071123A4 (en) METHOD FOR PRODUCING A LAYER
DE69922587D1 (de) Übertragungsverfahren
DE69940285D1 (de) Bildübertragung
AU4362896A (en) Method for transferring waste
FI980316A (fi) Tiedonsiirtomenetelmä
DE59803477D1 (de) Datenübertragung mit unterbrechungsphasen
AU6353499A (en) Film manufacturing method
FR2776824B1 (fr) Enveloppe a vide et procede pour mettre sous vide celle-ci
DE69610781T2 (de) Rotationsantriebsvorrichtungssystem
GB2314677B (en) Method for fabricating thin film transistor

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140430