FR2797347B1 - METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP - Google Patents

METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP

Info

Publication number
FR2797347B1
FR2797347B1 FR9910121A FR9910121A FR2797347B1 FR 2797347 B1 FR2797347 B1 FR 2797347B1 FR 9910121 A FR9910121 A FR 9910121A FR 9910121 A FR9910121 A FR 9910121A FR 2797347 B1 FR2797347 B1 FR 2797347B1
Authority
FR
France
Prior art keywords
surfragililization
transferring
thin film
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9910121A
Other languages
French (fr)
Other versions
FR2797347A1 (en
Inventor
Chrystelle Lagahe
Alain Soubie
Michel Bruel
Bernard Aspar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR9910121A priority Critical patent/FR2797347B1/en
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/FR2000/002239 priority patent/WO2001011667A1/en
Priority to KR1020027001366A priority patent/KR100742240B1/en
Priority to EP00956612A priority patent/EP1203403A1/en
Priority to JP2001516228A priority patent/JP2003506892A/en
Priority to MYPI20003580A priority patent/MY137329A/en
Priority to TW089115613A priority patent/TW457565B/en
Publication of FR2797347A1 publication Critical patent/FR2797347A1/en
Application granted granted Critical
Publication of FR2797347B1 publication Critical patent/FR2797347B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
FR9910121A 1999-08-04 1999-08-04 METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP Expired - Fee Related FR2797347B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR9910121A FR2797347B1 (en) 1999-08-04 1999-08-04 METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP
KR1020027001366A KR100742240B1 (en) 1999-08-04 2000-08-03 Method for transferring a thin layer comprising a step of excess fragilization
EP00956612A EP1203403A1 (en) 1999-08-04 2000-08-03 Method for transferring a thin layer comprising a step of excess fragilization
JP2001516228A JP2003506892A (en) 1999-08-04 2000-08-03 Method for transferring thin layers with excessive weakening steps
PCT/FR2000/002239 WO2001011667A1 (en) 1999-08-04 2000-08-03 Method for transferring a thin layer comprising a step of excess fragilization
MYPI20003580A MY137329A (en) 1999-08-04 2000-08-04 Process of transferring a thin layer including an over-weakening phase
TW089115613A TW457565B (en) 1999-08-04 2000-09-05 Method for transferring a thin layer comprising a step of excess fragilization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9910121A FR2797347B1 (en) 1999-08-04 1999-08-04 METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP

Publications (2)

Publication Number Publication Date
FR2797347A1 FR2797347A1 (en) 2001-02-09
FR2797347B1 true FR2797347B1 (en) 2001-11-23

Family

ID=9548879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9910121A Expired - Fee Related FR2797347B1 (en) 1999-08-04 1999-08-04 METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP

Country Status (7)

Country Link
EP (1) EP1203403A1 (en)
JP (1) JP2003506892A (en)
KR (1) KR100742240B1 (en)
FR (1) FR2797347B1 (en)
MY (1) MY137329A (en)
TW (1) TW457565B (en)
WO (1) WO2001011667A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8664084B2 (en) 2005-09-28 2014-03-04 Commissariat A L'energie Atomique Method for making a thin-film element
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (en) 1997-12-30 2000-01-28 Commissariat Energie Atomique METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS
FR2830983B1 (en) * 2001-10-11 2004-05-14 Commissariat Energie Atomique METHOD FOR MANUFACTURING THIN FILMS CONTAINING MICROCOMPONENTS
JP4277481B2 (en) 2002-05-08 2009-06-10 日本電気株式会社 Semiconductor substrate manufacturing method and semiconductor device manufacturing method
FR2845518B1 (en) * 2002-10-07 2005-10-14 Commissariat Energie Atomique IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT
FR2845517B1 (en) * 2002-10-07 2005-05-06 Commissariat Energie Atomique IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT
FR2846788B1 (en) * 2002-10-30 2005-06-17 PROCESS FOR PRODUCING DETACHABLE SUBSTRATES
FR2847075B1 (en) * 2002-11-07 2005-02-18 Commissariat Energie Atomique PROCESS FOR FORMING A FRAGILE ZONE IN A SUBSTRATE BY CO-IMPLANTATION
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (en) 2002-12-09 2005-10-28 Commissariat Energie Atomique METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING
FR2857953B1 (en) * 2003-07-21 2006-01-13 Commissariat Energie Atomique STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
JP4879737B2 (en) * 2004-01-29 2012-02-22 ソワテク Method for separating semiconductor layers
ATE511210T1 (en) 2004-06-10 2011-06-15 Soitec Silicon On Insulator METHOD FOR PRODUCING SOI WAFER
FR2886051B1 (en) 2005-05-20 2007-08-10 Commissariat Energie Atomique METHOD FOR DETACHING THIN FILM
FR2899378B1 (en) 2006-03-29 2008-06-27 Commissariat Energie Atomique METHOD FOR DETACHING A THIN FILM BY FUSION OF PRECIPITS
JP5284576B2 (en) * 2006-11-10 2013-09-11 信越化学工業株式会社 Manufacturing method of semiconductor substrate
KR101440930B1 (en) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing soi substrate
CN101663733B (en) * 2007-04-20 2013-02-27 株式会社半导体能源研究所 Method for manufacturing soi substrate and semiconductor device
JP5367330B2 (en) 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Method for manufacturing SOI substrate and method for manufacturing semiconductor device
JP5464843B2 (en) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Method for manufacturing SOI substrate
JP5339785B2 (en) * 2008-06-03 2013-11-13 信越半導体株式会社 Manufacturing method of bonded wafer
FR2947098A1 (en) 2009-06-18 2010-12-24 Commissariat Energie Atomique METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER
US8524572B2 (en) * 2011-10-06 2013-09-03 Micron Technology, Inc. Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions
US9281233B2 (en) * 2012-12-28 2016-03-08 Sunedison Semiconductor Limited Method for low temperature layer transfer in the preparation of multilayer semiconductor devices
FR3055063B1 (en) * 2016-08-11 2018-08-31 Soitec METHOD OF TRANSFERRING A USEFUL LAYER
FR3108787B1 (en) * 2020-03-31 2022-04-01 Commissariat Energie Atomique LOW TEMPERATURE TRANSFER AND CURE PROCESS OF A SEMICONDUCTOR LAYER

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738671B1 (en) * 1995-09-13 1997-10-10 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS WITH SEMICONDUCTOR MATERIAL
FR2748851B1 (en) * 1996-05-15 1998-08-07 Commissariat Energie Atomique PROCESS FOR PRODUCING A THIN FILM OF SEMICONDUCTOR MATERIAL
AU7685198A (en) * 1997-05-12 1998-12-08 Silicon Genesis Corporation A controlled cleavage process
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5909627A (en) * 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US8664084B2 (en) 2005-09-28 2014-03-04 Commissariat A L'energie Atomique Method for making a thin-film element
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer

Also Published As

Publication number Publication date
FR2797347A1 (en) 2001-02-09
MY137329A (en) 2009-01-30
KR20020085868A (en) 2002-11-16
EP1203403A1 (en) 2002-05-08
JP2003506892A (en) 2003-02-18
WO2001011667A1 (en) 2001-02-15
KR100742240B1 (en) 2007-07-24
TW457565B (en) 2001-10-01

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Effective date: 20140430