FR2736765B1 - Laser a semiconducteur ayant un plan incline d'emission de lumiere et son procede de fabrication - Google Patents

Laser a semiconducteur ayant un plan incline d'emission de lumiere et son procede de fabrication

Info

Publication number
FR2736765B1
FR2736765B1 FR9607677A FR9607677A FR2736765B1 FR 2736765 B1 FR2736765 B1 FR 2736765B1 FR 9607677 A FR9607677 A FR 9607677A FR 9607677 A FR9607677 A FR 9607677A FR 2736765 B1 FR2736765 B1 FR 2736765B1
Authority
FR
France
Prior art keywords
manufacturing
light emission
semiconductor laser
inclined light
emission plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9607677A
Other languages
English (en)
Other versions
FR2736765A1 (fr
Inventor
Chikashi Anayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2736765A1 publication Critical patent/FR2736765A1/fr
Application granted granted Critical
Publication of FR2736765B1 publication Critical patent/FR2736765B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR9607677A 1995-06-26 1996-06-20 Laser a semiconducteur ayant un plan incline d'emission de lumiere et son procede de fabrication Expired - Fee Related FR2736765B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15934295A JP3171307B2 (ja) 1995-06-26 1995-06-26 半導体レーザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2736765A1 FR2736765A1 (fr) 1997-01-17
FR2736765B1 true FR2736765B1 (fr) 2001-02-16

Family

ID=15691750

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9607677A Expired - Fee Related FR2736765B1 (fr) 1995-06-26 1996-06-20 Laser a semiconducteur ayant un plan incline d'emission de lumiere et son procede de fabrication

Country Status (4)

Country Link
US (1) US5862166A (fr)
JP (1) JP3171307B2 (fr)
KR (1) KR100227993B1 (fr)
FR (1) FR2736765B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5787104A (en) * 1995-01-19 1998-07-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
FR2784243B1 (fr) * 1998-10-02 2000-11-24 Cit Alcatel Amplificateur optique en semi-conducteur
US6239454B1 (en) * 1999-05-10 2001-05-29 Lucent Technologies Inc. Net strain reduction in integrated laser-modulator
JP3679010B2 (ja) * 2001-01-18 2005-08-03 ユーディナデバイス株式会社 半導体レーザ及びその製造方法
US6778575B2 (en) * 2001-03-22 2004-08-17 Sanyo Electric Co., Ltd. AlGaInP-based high-output red semiconductor laser device
JP2003133642A (ja) * 2001-10-19 2003-05-09 Hitachi Ltd 半導体レーザ素子及び光電子装置
EP1309050A1 (fr) * 2001-11-06 2003-05-07 Agilent Technologies, Inc. (a Delaware corporation) Dispositif laser et méthode
TWI252599B (en) * 2004-04-27 2006-04-01 Showa Denko Kk N-type group III nitride semiconductor layered structure
US8557038B2 (en) * 2009-04-22 2013-10-15 American Dental Association Foundation Dual-phase calcium phosphate cement composition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68920853T2 (de) * 1988-11-28 1995-05-24 Fujitsu Ltd Verfahren für das Wachstum von epitaxialen Schichten.
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
EP0533197A3 (en) * 1991-09-20 1993-11-03 Fujitsu Ltd Stripe laser diode having an improved efficiency for current confinement
JP2945546B2 (ja) * 1991-09-20 1999-09-06 富士通株式会社 ストライプレーザダイオードおよびその製造方法
JPH05167187A (ja) * 1991-12-13 1993-07-02 Nec Corp 半導体レーザ
JPH065976A (ja) * 1992-06-24 1994-01-14 Fujitsu Ltd 半導体レーザ装置の製造方法
JP2956869B2 (ja) * 1993-08-30 1999-10-04 富士通株式会社 半導体レーザおよびその製造方法
JP3157671B2 (ja) * 1993-12-28 2001-04-16 富士通株式会社 半導体レーザ装置と製造方法
JP2970797B2 (ja) * 1993-12-28 1999-11-02 富士通株式会社 半導体レーザ装置の製造方法
JP3246634B2 (ja) * 1994-03-18 2002-01-15 富士通株式会社 半導体レーザ装置
US5646953A (en) * 1994-04-06 1997-07-08 Matsushita Electronics Corporation Semiconductor laser device

Also Published As

Publication number Publication date
JP3171307B2 (ja) 2001-05-28
JPH098411A (ja) 1997-01-10
FR2736765A1 (fr) 1997-01-17
KR970004195A (ko) 1997-01-29
US5862166A (en) 1999-01-19
KR100227993B1 (ko) 1999-11-01

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Legal Events

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ST Notification of lapse

Effective date: 20140228