FR2707041A1 - Semiconductor configuration and method of manufacturing it - Google Patents

Semiconductor configuration and method of manufacturing it Download PDF

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Publication number
FR2707041A1
FR2707041A1 FR9407728A FR9407728A FR2707041A1 FR 2707041 A1 FR2707041 A1 FR 2707041A1 FR 9407728 A FR9407728 A FR 9407728A FR 9407728 A FR9407728 A FR 9407728A FR 2707041 A1 FR2707041 A1 FR 2707041A1
Authority
FR
France
Prior art keywords
layer
partial
wafer
chip
partial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9407728A
Other languages
English (en)
French (fr)
Other versions
FR2707041B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2707041A1 publication Critical patent/FR2707041A1/fr
Application granted granted Critical
Publication of FR2707041B1 publication Critical patent/FR2707041B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
FR9407728A 1993-06-23 1994-06-23 Semiconductor configuration and method of manufacturing it Granted FR2707041A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4320780A DE4320780B4 (de) 1993-06-23 1993-06-23 Halbleiteranordnung und Verfahren zur Herstellung

Publications (2)

Publication Number Publication Date
FR2707041A1 true FR2707041A1 (en) 1994-12-30
FR2707041B1 FR2707041B1 (enExample) 1997-01-03

Family

ID=6490978

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9407728A Granted FR2707041A1 (en) 1993-06-23 1994-06-23 Semiconductor configuration and method of manufacturing it

Country Status (5)

Country Link
US (1) US5541140A (enExample)
JP (1) JP3902674B2 (enExample)
DE (1) DE4320780B4 (enExample)
FR (1) FR2707041A1 (enExample)
IT (1) IT1270220B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0769816A1 (de) * 1995-10-19 1997-04-23 Robert Bosch Gmbh PM-Übergang mit hoher Durchbruchsspannung und Verfahren zur Herstellung

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999038205A1 (de) * 1998-01-21 1999-07-29 Robert Bosch Gmbh Verfahren zur herstellung von dioden
DE19938209B4 (de) 1999-08-12 2007-12-27 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zur Herstellung
DE19942879A1 (de) * 1999-09-08 2001-03-15 Bosch Gmbh Robert Halbleiterelement und Verfahren zur Herstellung des Halbleiterbauelements
DE10057612B4 (de) * 2000-11-21 2012-03-08 Infineon Technologies Ag Vertikales Halbleiterbauelement mit vertikalem Randabschluss
DE10065525B4 (de) * 2000-12-28 2006-07-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Halbleiteranordnung mit einem PN-Übergang
US6555480B2 (en) 2001-07-31 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate with fluidic channel and method of manufacturing
DE10159498A1 (de) 2001-12-04 2003-06-12 Bosch Gmbh Robert Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung
WO2003061015A1 (de) * 2002-01-15 2003-07-24 Robert Bosch Gmbh Halbleiteranordnung mit einem pn-übergang und verfahren zur herstellung einer halbleiteranordnung
US6981759B2 (en) * 2002-04-30 2006-01-03 Hewlett-Packard Development Company, Lp. Substrate and method forming substrate for fluid ejection device
US6554403B1 (en) 2002-04-30 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate for fluid ejection device
DE10243813A1 (de) * 2002-09-20 2004-04-01 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zu ihrer Herstellung
US6910758B2 (en) * 2003-07-15 2005-06-28 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for fluid ejection device
JP4251326B2 (ja) * 2004-03-30 2009-04-08 サンケン電気株式会社 半導体装置
DE102004063180B4 (de) 2004-12-29 2020-02-06 Robert Bosch Gmbh Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente
DE102006049683B3 (de) * 2006-10-13 2008-05-29 Q-Cells Ag Verfahren und Vorrichtung zum Charakterisieren von Wafern bei der Herstellung von Solarzellen
JP5213350B2 (ja) * 2007-04-26 2013-06-19 関西電力株式会社 炭化珪素ツェナーダイオード
DE102017209590A1 (de) 2017-06-07 2018-12-13 Robert Bosch Gmbh PN-Diode
DE102021109003B4 (de) 2021-04-12 2022-12-08 Infineon Technologies Ag Verfahren zur Chiptrennung unterstützt von einem Rückseitengraben und einem Haftmittel darin und elektronischer Chip
CN114171605B (zh) * 2021-12-03 2024-08-30 杭州赛晶电子有限公司 一种p型杂质扩散结屏蔽栅硅二极管的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
FR2220096A1 (enExample) * 1973-03-02 1974-09-27 Licentia Gmbh
FR2301921A1 (fr) * 1975-02-18 1976-09-17 Silec Semi Conducteurs Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication
US4215358A (en) * 1976-11-01 1980-07-29 Mitsubishi Denki Kabushiki Kaisha Mesa type semiconductor device
EP0533439A2 (en) * 1991-09-20 1993-03-24 Hitachi, Ltd. Constant-voltage diode, power converter using the same and process of producing constant-voltage diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264149A (en) * 1963-12-19 1966-08-02 Bell Telephone Labor Inc Method of making semiconductor devices
DE4130247A1 (de) * 1991-09-12 1993-03-18 Bosch Gmbh Robert Halbleiteranordnung und verfahren zu deren herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
FR2220096A1 (enExample) * 1973-03-02 1974-09-27 Licentia Gmbh
FR2301921A1 (fr) * 1975-02-18 1976-09-17 Silec Semi Conducteurs Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication
US4215358A (en) * 1976-11-01 1980-07-29 Mitsubishi Denki Kabushiki Kaisha Mesa type semiconductor device
EP0533439A2 (en) * 1991-09-20 1993-03-24 Hitachi, Ltd. Constant-voltage diode, power converter using the same and process of producing constant-voltage diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0769816A1 (de) * 1995-10-19 1997-04-23 Robert Bosch Gmbh PM-Übergang mit hoher Durchbruchsspannung und Verfahren zur Herstellung

Also Published As

Publication number Publication date
JP3902674B2 (ja) 2007-04-11
ITMI941237A0 (it) 1994-06-14
DE4320780B4 (de) 2007-07-12
ITMI941237A1 (it) 1995-12-14
US5541140A (en) 1996-07-30
FR2707041B1 (enExample) 1997-01-03
DE4320780A1 (de) 1995-03-09
IT1270220B (it) 1997-04-29
JPH0738123A (ja) 1995-02-07

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