FR2624501A1 - Rouleaux de transport pour la zone chaude d'un four de trempe et/ou de bombage de feuilles de verre - Google Patents
Rouleaux de transport pour la zone chaude d'un four de trempe et/ou de bombage de feuilles de verre Download PDFInfo
- Publication number
- FR2624501A1 FR2624501A1 FR8816114A FR8816114A FR2624501A1 FR 2624501 A1 FR2624501 A1 FR 2624501A1 FR 8816114 A FR8816114 A FR 8816114A FR 8816114 A FR8816114 A FR 8816114A FR 2624501 A1 FR2624501 A1 FR 2624501A1
- Authority
- FR
- France
- Prior art keywords
- transport rollers
- glass sheets
- oven
- tempering
- hot zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005496 tempering Methods 0.000 title abstract description 7
- 239000011521 glass Substances 0.000 abstract description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 12
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 12
- 238000005452 bending Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003303 reheating Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- JCCNYMKQOSZNPW-UHFFFAOYSA-N loratadine Chemical compound C1CN(C(=O)OCC)CCC1=C1C2=NC=CC=C2CCC2=CC(Cl)=CC=C21 JCCNYMKQOSZNPW-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
- C03B29/06—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
- C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
- C03B35/16—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by roller conveyors
- C03B35/165—Supports or couplings for roller ends, e.g. trunions, gudgeons
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
- C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
- C03B35/16—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by roller conveyors
- C03B35/18—Construction of the conveyor rollers ; Materials, coatings or coverings thereof
- C03B35/181—Materials, coatings, loose coverings or sleeves thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C13/00—Rolls, drums, discs, or the like; Bearings or mountings therefor
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- H01L23/64—Impedance arrangements
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Rollers For Roller Conveyors For Transfer (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
L'invention concerne l'utilisation de carbure de silicium pour la réalisation de rouleaux de transport pour la zone chaude d'un four de trempe et/ou de bombage de feuilles de verre.
Description
ROULEAUX DE TRANSPORT POUR LA ZONE CHAUDE
D'UN FOUR DE TREMPE ET/OU DE BOMBAGE
DE FEUILTL DE VERRE
L'invention concerne un rouleau de transport pour la zone chaude de fours horizontaux pour feuilles de verre notamment pour fours de trempe et/ou de bombage, ainsi qu'un four horizontal équipé d'un convoyeur constitué par de tels rouleaux de transport et prévu pour le réchauffage de feuilles de verre jusqu'à la température de trempe et/ou
de bombage.
Les rouleaux de transport connus ne sont pas sans défaut que ce soit du point de vue de leur comportement dans la zone de leur logement dans les paliers que celui dans la zone de contact avec les feuilles de verre. Ainsi les rouleaux de transport en dioxyde de silicium peuvent conduire après un certain temps d'utilisation à un marquage des feuilles de verre dû à de petites bulles présentes dans
le corps du rouleau et émergeant à la surface de celui-ci.
Pour remédier à cet inconvénient il est connu de munir les rouleaux de transport d'un revêtement ne formant pas de bulles tel que l'oxyde d'aluminium, l'oxyde de zirconium, le silicate de zirconium ou le dioxyde de silicium (DE-A-1
247 567).
Un autre défaut des rouleaux de transport connus
vient de ce que leur résistance à l'abrasion est insuffi-
sante pour les types usuels de paliers et/ou d'entraînement -2représentés et décrits par exemple dans les publications DE-23 19 049 et EP 51 539. Il est certes connu du brevet EP
51 539 de munir autour de leurs points critiques les rou-
leaux de transport en quartz fritté d'une couche vitreuse résistante aux frottements obtenue au moyen d'une fusion localisée de la surface. Toutefois, dans de nombreux cas, la résistance aux frottements de cette couche est encore insuffisante. Un inconvénient supplémentaire des rouleaux de
transport connus est qu'en raison de leur propriété de ré-
sistance mécanique il apparaît un certain bombage trans-
versal élastique voir sous certaines conditions définitif.
Ce bombage transversal a un effet défavorable sur la qua-
lité optique des feuilles de verre. Du fait que les rou-
leaux de transport sont montés sur des supports placés de façon usuelle à l'extérieur du four et ne sont pas soutenus entre les paliers de support, ils doivent présenter un diamètre relativement grand si on veut éviter ces bombages transversaux. Cette valeur élevée du diamètre des rouleaux de transport a pour conséquence une distance relativement grande entre les rouleaux de transport et par conséquence entre les lignes de soutien successives des feuilles de
verre, de telle sorte qu'il en résulte un danger de défor-
mation des feuilles de verre entre ces lignes de soutien
par affaissement dû au poids propre des feuilles de verre.
L'invention a pour but un rouleau de transport pour convoyeur de fours horizontaux pour feuilles de verre qui par rapport aux rouleaux connus présente une résistance
à l'abrasion mécanique plus élevée, un comportement amé-
lioré vis-à-vis du verre chaud et une moindre tendance à la déformation. Selon l'invention, il est proposé d'utiliser dans la zone chaude de fours horizontaux pour feuilles de verre des rouleaux de transport exclusivement ou essentiellement
en carbure de silicium.
Il est apparu que des rouleaux de transport en carbure de silicium satisfont toutes les exigences ci-dessus relatées. En raison de la grande dureté de ce - 3 - matériau, les rouleaux de transport selon l'invention ont une résistance à l'abrasion exceptionnellement élevée, de
sorte qu'ils peuvent être entraînés directement par fric-
tion pendant une période d'utilisation très longue. De plus, le carbure de silicium n'est pas mouillé par le verre fondu et au contraire des matériaux à base d'oxyde ne colle
pas au verre ramolli, de sorte que sous cet aspect égale-
ment les rouleaux selon l'invention présentent un avantage essentiel par rapport aux rouleaux connus de l'art. De plus, la dilatation élastique du carbure de silicium est nettement inférieure à celle des matériaux habituellement
utilisés, ce qui diminue le danger d'un bombage transver-
sal. Cela signifie que pour une même longueur de rouleau de transport, le diamètre d'un rouleau en carbure de silicium peut être jusqu'à 50 % plus petit. Par conséquence, les
rouleaux de transport selon l'invention peuvent être dis-
posés de façon plus rapprochée les uns des autres, ce qui conduit à une diminution du risque de dégradation de la
qualité optique.
Par rapport aux rouleaux de transport connus de l'art, les rouleaux de transport en carbure de silicium présentent toutefois une conductivité thermique accrue de sorte que les pertes thermiques sont plus grandes si les paliers sont positionnés en dehors du four. Mais on peut y remédier si conformément à un développement avantageux de l'invention, on choisit d'opérer avec des paliers sis dans
l'enceinte chaude du four et donc avec des rouleaux dis-
posés sur toute leur longueur dans le four. Dans ce but, il est particulièrement avantageux d'utiliser des paliers à gaz tels que ceux décrits dans la demande de brevet EP 88 402447.2. La surface de glissement d'un tel palier à gaz
est munie d'orifices d'émission d'un gaz sous pression no-
tamment de l'air qui permet la formation d'un film gazeux
entre la coquille support et le rouleau de transport.
L'accouplement des rouleaux de transport au dispositif d'entraînement commun est obtenu de préférence de la façon décrite dans la demande de brevet EP 88.402447.2 o il est proposé un accouplement de chaque rouleau de transport à un arbre d'entraînement disposé à l'extérieur du four au moyen - 4 - d'une tige d'accouplement traversant la paroi du four qui présente un diamètre plus petit que celui du rouleau et qui
est accouplée de façon articulée à la fois à l'arbre d'en-
traînement et au rouleau de transport.
- Pour l'invention, on peut utiliser tels quels des tubes en carbure de silicium technique obtenus par des
procédés connus de cet art et disponibles dans le commerce.
Par carbure de silicium technique, on entend un matériau qui se compose pour l'essentiel de carbure de silicium, mais qui peut contenir de petites quantités d'additifs et/ou d'impuretés qui lui confèrent en règle générale une couleur sombre. Ces tubes sont obtenus à partir de corps cylindriques pleins ou creux, rectifiés au diamètre voulu dont la surface est polie de façon appropriée de sorte qu'ils peuvent être posés directement sur les paliers à gaz. -5 -
REVEDICATIONS
1. Rouleau de transport pour la zone chaude d'un four horizontal pour feuilles de verre, notamment un four de trempe et/ou de bombage, caractérisé en ce qu'il est constitué exclusivement ou essentiellement en carbure- de silicium. 2. Four horizontal avec un convoyeur de transport formé de rouleaux pour le réchauffage de feuilles de verre à la température de bombage et/ou de trempe, caractérisé en
ce que les rouleaux de transport sont constitués exclusi-
vement ou essentiellement en carbure de silicum et sont
montés sur des paliers disposés à l'intérieur du four.
3. Four horizontal selon la revendication 2, ca-
ractérisé en ce que les rouleaux de transport sont montés sur des paliers à gaz dont les surfaces de glissement sont
munies d'orifices d'émission d'un gaz sous pression, no-
tamment de l'air, servant à la formation de films gazeux
entre les coquilles de support et les rouleaux.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19890403280 EP0375484A1 (fr) | 1988-12-08 | 1989-11-28 | Rouleaux de transport pour la zone chaude d'un four de trempe et/ou de bombage de feuilles de verre |
FI895854A FI895854A0 (fi) | 1988-12-08 | 1989-12-07 | Transportrullar foer det heta zonet av ett haerdnings- eller kuperingsugn foer glasskivor. |
JP31789289A JPH02188434A (ja) | 1988-12-08 | 1989-12-08 | 高温領域でガラス板を移送するローラ,およびこれを備えた水平炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62315595A JPH01257355A (ja) | 1987-12-14 | 1987-12-14 | マイクロ波モノリシックic |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2624501A1 true FR2624501A1 (fr) | 1989-06-16 |
Family
ID=18067243
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8816114A Pending FR2624501A1 (fr) | 1987-12-14 | 1988-12-08 | Rouleaux de transport pour la zone chaude d'un four de trempe et/ou de bombage de feuilles de verre |
FR888816144A Expired - Fee Related FR2624654B1 (fr) | 1987-12-14 | 1988-12-08 | Circuit integre monolithique micro-ondes et procede de fabrication |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888816144A Expired - Fee Related FR2624654B1 (fr) | 1987-12-14 | 1988-12-08 | Circuit integre monolithique micro-ondes et procede de fabrication |
Country Status (4)
Country | Link |
---|---|
US (2) | US4956697A (fr) |
JP (1) | JPH01257355A (fr) |
FR (2) | FR2624501A1 (fr) |
GB (1) | GB2213638B (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5280194A (en) * | 1988-11-21 | 1994-01-18 | Micro Technology Partners | Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device |
US5202288A (en) * | 1990-06-01 | 1993-04-13 | Robert Bosch Gmbh | Method of manufacturing an electronic circuit component incorporating a heat sink |
JP3047986B2 (ja) * | 1990-07-25 | 2000-06-05 | 株式会社日立製作所 | 半導体装置 |
US5063177A (en) * | 1990-10-04 | 1991-11-05 | Comsat | Method of packaging microwave semiconductor components and integrated circuits |
JP2505065B2 (ja) * | 1990-10-04 | 1996-06-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5376561A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
US5218357A (en) * | 1991-12-03 | 1993-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Miniature modular microwave end-to-end receiver |
US5592022A (en) * | 1992-05-27 | 1997-01-07 | Chipscale, Inc. | Fabricating a semiconductor with an insulative coating |
US5403729A (en) * | 1992-05-27 | 1995-04-04 | Micro Technology Partners | Fabricating a semiconductor with an insulative coating |
JPH06209058A (ja) * | 1993-01-12 | 1994-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法,並びにその実装方法 |
JPH06268112A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
JPH06326330A (ja) * | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5376574A (en) * | 1993-07-30 | 1994-12-27 | Texas Instruments Incorporated | Capped modular microwave integrated circuit and method of making same |
JPH07115175A (ja) * | 1993-10-14 | 1995-05-02 | Nec Corp | 半導体装置 |
US5508231A (en) * | 1994-03-07 | 1996-04-16 | National Semiconductor Corporation | Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits |
US5656547A (en) * | 1994-05-11 | 1997-08-12 | Chipscale, Inc. | Method for making a leadless surface mounted device with wrap-around flange interface contacts |
AU2659995A (en) * | 1994-06-09 | 1996-01-04 | Chipscale, Inc. | Resistor fabrication |
JP3987573B2 (ja) * | 1994-10-31 | 2007-10-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 能動素子及び受動素子を有する集積化された半導体装置 |
US5517053A (en) * | 1995-01-09 | 1996-05-14 | Northrop Grumman Corporation | Self stabilizing heater controlled oscillating transistor |
JP2757805B2 (ja) * | 1995-01-27 | 1998-05-25 | 日本電気株式会社 | 半導体装置 |
US5627112A (en) * | 1995-11-13 | 1997-05-06 | Rockwell International Corporation | Method of making suspended microstructures |
US6570247B1 (en) * | 1997-12-30 | 2003-05-27 | Intel Corporation | Integrated circuit device having an embedded heat slug |
JP2002343643A (ja) * | 2001-05-18 | 2002-11-29 | Murata Mfg Co Ltd | 積層型バラントランス |
US6661317B2 (en) * | 2002-03-13 | 2003-12-09 | The Boeing Co. | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
JP5205806B2 (ja) * | 2007-05-09 | 2013-06-05 | 三菱化学株式会社 | Ledチップ固定用基板およびその製造方法 |
US12082336B2 (en) | 2020-09-14 | 2024-09-03 | Lumentum Japan, Inc. | Differential circuit board and semiconductor light emitting device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB636498A (en) * | 1944-03-04 | 1950-05-03 | Gas Machinery Co | Improvements relating to furnace conveyor rollers |
DE809414C (de) * | 1949-11-22 | 1951-07-30 | Rudolf Dr-Ing Gerlach | Verschleiss- und saeurefester UEberzug aus keramischem Material fuer Metallkoerper, insbesondere fuer Tragrollen von Foerderbaendern |
US3404973A (en) * | 1963-03-05 | 1968-10-08 | Saint Gobain | Glass sheet forming apparatus with coated silica core roller and roller |
DE2713741A1 (de) * | 1977-03-29 | 1978-10-05 | Thyssen Edelstahlwerke Ag | Fuehrungsrolle mit waermestrahlungsschutz |
DE2834576A1 (de) * | 1978-08-07 | 1980-02-21 | Bbc Brown Boveri & Cie | Transportrolle zur verwendung in hochtemperaturoefen |
US4260404A (en) * | 1979-05-09 | 1981-04-07 | Ppg Industries, Inc. | Method for reducing roll marking of glass sheets |
US4553931A (en) * | 1983-03-22 | 1985-11-19 | Sumitomo Metal Industries, Ltd. | Heat-resisting furnace roll |
EP0310500A2 (fr) * | 1987-10-01 | 1989-04-05 | Saint-Gobain Vitrage International | Unité de palier pour les rouleaux porteurs d'un four horizontal et four horizontal pour feuilles de verre |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3986196A (en) * | 1975-06-30 | 1976-10-12 | Varian Associates | Through-substrate source contact for microwave FET |
GB2100925B (en) * | 1981-06-25 | 1985-06-05 | Standard Telephones Cables Ltd | Fabricating integrated circuits |
JPS58170044A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体素子 |
JPS59123270A (ja) * | 1982-12-28 | 1984-07-17 | Nec Corp | モノリシツク回路 |
FR2565030B1 (fr) * | 1984-05-25 | 1986-08-22 | Thomson Csf | Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure |
JPS62298142A (ja) * | 1986-06-17 | 1987-12-25 | Nec Corp | 半導体装置 |
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
DE3718684A1 (de) * | 1987-06-04 | 1988-12-22 | Licentia Gmbh | Halbleiterkoerper |
JPH023887A (ja) * | 1988-06-20 | 1990-01-09 | Fujitsu General Ltd | 自動通報装置 |
-
1987
- 1987-12-14 JP JP62315595A patent/JPH01257355A/ja active Pending
-
1988
- 1988-09-30 US US07/251,677 patent/US4956697A/en not_active Expired - Lifetime
- 1988-10-05 GB GB8823335A patent/GB2213638B/en not_active Expired - Fee Related
- 1988-12-08 FR FR8816114A patent/FR2624501A1/fr active Pending
- 1988-12-08 FR FR888816144A patent/FR2624654B1/fr not_active Expired - Fee Related
-
1990
- 1990-06-26 US US07/528,564 patent/US5045503A/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB636498A (en) * | 1944-03-04 | 1950-05-03 | Gas Machinery Co | Improvements relating to furnace conveyor rollers |
DE809414C (de) * | 1949-11-22 | 1951-07-30 | Rudolf Dr-Ing Gerlach | Verschleiss- und saeurefester UEberzug aus keramischem Material fuer Metallkoerper, insbesondere fuer Tragrollen von Foerderbaendern |
US3404973A (en) * | 1963-03-05 | 1968-10-08 | Saint Gobain | Glass sheet forming apparatus with coated silica core roller and roller |
DE2713741A1 (de) * | 1977-03-29 | 1978-10-05 | Thyssen Edelstahlwerke Ag | Fuehrungsrolle mit waermestrahlungsschutz |
DE2834576A1 (de) * | 1978-08-07 | 1980-02-21 | Bbc Brown Boveri & Cie | Transportrolle zur verwendung in hochtemperaturoefen |
US4260404A (en) * | 1979-05-09 | 1981-04-07 | Ppg Industries, Inc. | Method for reducing roll marking of glass sheets |
US4553931A (en) * | 1983-03-22 | 1985-11-19 | Sumitomo Metal Industries, Ltd. | Heat-resisting furnace roll |
EP0310500A2 (fr) * | 1987-10-01 | 1989-04-05 | Saint-Gobain Vitrage International | Unité de palier pour les rouleaux porteurs d'un four horizontal et four horizontal pour feuilles de verre |
Also Published As
Publication number | Publication date |
---|---|
FR2624654A1 (fr) | 1989-06-16 |
US4956697A (en) | 1990-09-11 |
GB8823335D0 (en) | 1988-11-09 |
JPH01257355A (ja) | 1989-10-13 |
GB2213638B (en) | 1991-11-06 |
US5045503A (en) | 1991-09-03 |
GB2213638A (en) | 1989-08-16 |
FR2624654B1 (fr) | 1992-06-19 |
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