FR2602913B1 - Dispositif photovoltaique - Google Patents

Dispositif photovoltaique

Info

Publication number
FR2602913B1
FR2602913B1 FR878711691A FR8711691A FR2602913B1 FR 2602913 B1 FR2602913 B1 FR 2602913B1 FR 878711691 A FR878711691 A FR 878711691A FR 8711691 A FR8711691 A FR 8711691A FR 2602913 B1 FR2602913 B1 FR 2602913B1
Authority
FR
France
Prior art keywords
amorphous silicon
photovoltaic cell
impurity
conductivity type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR878711691A
Other languages
English (en)
Other versions
FR2602913A1 (fr
Inventor
Kaneo Watanabe
Yukio Nakashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61193452A external-priority patent/JPS6347987A/ja
Priority claimed from JP61193655A external-priority patent/JPS6348871A/ja
Priority claimed from JP61194505A external-priority patent/JPS6350076A/ja
Priority claimed from JP61194504A external-priority patent/JPH06101575B2/ja
Priority claimed from JP61267212A external-priority patent/JPH073876B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of FR2602913A1 publication Critical patent/FR2602913A1/fr
Application granted granted Critical
Publication of FR2602913B1 publication Critical patent/FR2602913B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
FR878711691A 1986-08-18 1987-08-18 Dispositif photovoltaique Expired - Fee Related FR2602913B1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP61193452A JPS6347987A (ja) 1986-08-18 1986-08-18 光起電力装置
JP61193655A JPS6348871A (ja) 1986-08-19 1986-08-19 光起電力装置
JP61194505A JPS6350076A (ja) 1986-08-20 1986-08-20 光起電力装置
JP61194504A JPH06101575B2 (ja) 1986-08-20 1986-08-20 光起電力装置
JP61267212A JPH073876B2 (ja) 1986-11-10 1986-11-10 光起電力装置

Publications (2)

Publication Number Publication Date
FR2602913A1 FR2602913A1 (fr) 1988-02-19
FR2602913B1 true FR2602913B1 (fr) 1991-08-30

Family

ID=27529077

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878711691A Expired - Fee Related FR2602913B1 (fr) 1986-08-18 1987-08-18 Dispositif photovoltaique

Country Status (2)

Country Link
US (1) US4776894A (fr)
FR (1) FR2602913B1 (fr)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62234379A (ja) * 1986-04-04 1987-10-14 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH0693519B2 (ja) * 1987-09-17 1994-11-16 株式会社富士電機総合研究所 非晶質光電変換装置
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
GB8828348D0 (en) * 1988-12-05 1989-01-05 Secr Defence Photodetector
US5246506A (en) * 1991-07-16 1993-09-21 Solarex Corporation Multijunction photovoltaic device and fabrication method
DE4410220B4 (de) * 1994-03-24 2005-02-17 Forschungszentrum Jülich GmbH Dünnschicht-Solarzelle
WO1995026571A1 (fr) * 1994-03-25 1995-10-05 Amoco/Enron Solar Silicium amorphe stabilise et dispositifs contenant ce dernier
IT1272248B (it) * 1994-05-12 1997-06-16 Univ Roma Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori
US5860953A (en) * 1995-11-21 1999-01-19 Catheter Imaging Systems, Inc. Steerable catheter having disposable module and sterilizable handle and method of connecting same
FR2805080A1 (fr) * 2000-02-14 2001-08-17 Applied Komatsu Technology Inc Procede pour deposer des films a base de silicium amorphe, ayant une conductivite ajustee
JP4560245B2 (ja) 2001-06-29 2010-10-13 キヤノン株式会社 光起電力素子
US7800194B2 (en) * 2002-04-23 2010-09-21 Freedman Philip D Thin film photodetector, method and system
JP2004014812A (ja) * 2002-06-07 2004-01-15 Canon Inc 光起電力素子
US8664525B2 (en) * 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
AU2004259485B2 (en) * 2003-07-24 2009-04-23 Kaneka Corporation Stacked photoelectric converter
WO2005011002A1 (fr) * 2003-07-24 2005-02-03 Kaneka Corporation Photopile a couches minces a base de silicium
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
KR100900443B1 (ko) * 2006-11-20 2009-06-01 엘지전자 주식회사 태양전지 및 그의 제조방법
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
DE102007033444A1 (de) * 2007-07-18 2009-01-29 Schott Solar Gmbh Silizium-Mehrfachsolarzelle und Verfahren zu deren Herstellung
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
JP2011503848A (ja) 2007-11-02 2011-01-27 アプライド マテリアルズ インコーポレイテッド 堆積プロセス間のプラズマ処置
DE102008014260A1 (de) * 2008-03-13 2009-09-24 Schott Solar Gmbh Silizium-Solarzelle
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
US20100078064A1 (en) * 2008-09-29 2010-04-01 Thinsilicion Corporation Monolithically-integrated solar module
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
CN102301490A (zh) * 2009-06-10 2011-12-28 薄膜硅公司 光生伏打模块和制造具有级联半导体层堆叠的光生伏打模块的方法
US20110114177A1 (en) * 2009-07-23 2011-05-19 Applied Materials, Inc. Mixed silicon phase film for high efficiency thin film silicon solar cells
WO2011046664A2 (fr) * 2009-10-15 2011-04-21 Applied Materials, Inc. Couche barrière placée entre un substrat et une couche d'oxyde conducteur transparente pour cellules solaires à couches minces de silicium
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
KR20130112148A (ko) * 2012-04-03 2013-10-14 엘지전자 주식회사 박막 태양 전지

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55122783A (en) * 1979-03-13 1980-09-20 Kyowa Hakko Kogyo Co Ltd Preparation of porfiromycin derivative
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
US4385199A (en) * 1980-12-03 1983-05-24 Yoshihiro Hamakawa Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
US4388482A (en) * 1981-01-29 1983-06-14 Yoshihiro Hamakawa High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
FR2545275B1 (fr) * 1983-04-27 1987-03-06 Rca Corp Photodetecteur tandem

Also Published As

Publication number Publication date
US4776894A (en) 1988-10-11
FR2602913A1 (fr) 1988-02-19

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