FR2581657B1 - Materiau en alliage de cuivre pour fils conducteurs d'un dispositif semi-conducteur - Google Patents

Materiau en alliage de cuivre pour fils conducteurs d'un dispositif semi-conducteur

Info

Publication number
FR2581657B1
FR2581657B1 FR868600187A FR8600187A FR2581657B1 FR 2581657 B1 FR2581657 B1 FR 2581657B1 FR 868600187 A FR868600187 A FR 868600187A FR 8600187 A FR8600187 A FR 8600187A FR 2581657 B1 FR2581657 B1 FR 2581657B1
Authority
FR
France
Prior art keywords
semiconductor device
copper alloy
percent
leads
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR868600187A
Other languages
English (en)
Other versions
FR2581657A1 (fr
Inventor
Rensei Futatsuka
Seiji Kumagai
Masuhiro Izumida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Shindoh Co Ltd
Original Assignee
Mitsubishi Shindoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Shindoh Co Ltd filed Critical Mitsubishi Shindoh Co Ltd
Publication of FR2581657A1 publication Critical patent/FR2581657A1/fr
Application granted granted Critical
Publication of FR2581657B1 publication Critical patent/FR2581657B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
FR868600187A 1985-05-08 1986-01-08 Materiau en alliage de cuivre pour fils conducteurs d'un dispositif semi-conducteur Expired - Fee Related FR2581657B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60097589A JPS61257443A (ja) 1985-05-08 1985-05-08 半導体装置用Ｃｕ合金リ−ド素材

Publications (2)

Publication Number Publication Date
FR2581657A1 FR2581657A1 (fr) 1986-11-14
FR2581657B1 true FR2581657B1 (fr) 1991-12-27

Family

ID=14196424

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868600187A Expired - Fee Related FR2581657B1 (fr) 1985-05-08 1986-01-08 Materiau en alliage de cuivre pour fils conducteurs d'un dispositif semi-conducteur

Country Status (5)

Country Link
US (1) US4668471A (fr)
JP (1) JPS61257443A (fr)
DE (1) DE3613594C3 (fr)
FR (1) FR2581657B1 (fr)
GB (1) GB2175008B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805009A (en) * 1985-03-11 1989-02-14 Olin Corporation Hermetically sealed semiconductor package
US5463247A (en) * 1992-06-11 1995-10-31 Mitsubishi Shindoh Co., Ltd. Lead frame material formed of copper alloy for resin sealed type semiconductor devices
CN1102177C (zh) * 1998-03-10 2003-02-26 三菱伸铜株式会社 具有优异的冲裁模耐磨性的铜基合金及其薄板
JP4329967B2 (ja) * 2000-04-28 2009-09-09 古河電気工業株式会社 プラスチック基板に設けられるピングリッドアレイ用ｉｃリードピンに適した銅合金線材
US6632300B2 (en) 2000-06-26 2003-10-14 Olin Corporation Copper alloy having improved stress relaxation resistance
US6996897B2 (en) * 2002-07-31 2006-02-14 Freescale Semiconductor, Inc. Method of making a mount for electronic devices
DE10330192B4 (de) * 2003-07-03 2008-11-13 Infineon Technologies Ag Verfahren zum Abscheiden einer porösen Haftvermittlungsschicht auf einer Oberfläche eines elektrisch leitenden Körpers sowie Verwendung des Verfahrens
DE102005052563B4 (de) * 2005-11-02 2016-01-14 Infineon Technologies Ag Halbleiterchip, Halbleiterbauteil und Verfahren zu deren Herstellung
JP5210540B2 (ja) * 2007-05-08 2013-06-12 株式会社日立製作所 半導体レーザ
US20230067714A1 (en) * 2021-08-26 2023-03-02 Taiwan Semiconductor Manufacturing Company Limited Three-dimensional device structure including seal ring connection circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2155406A (en) * 1938-04-28 1939-04-25 Chase Brass & Copper Co Electrical conductor
US3522039A (en) * 1967-06-26 1970-07-28 Olin Mathieson Copper base alloy
US3677745A (en) * 1969-02-24 1972-07-18 Cooper Range Co Copper base composition
US3639119A (en) * 1970-05-04 1972-02-01 Olin Corp Copper base alloy
DE2253994B2 (de) * 1972-11-04 1975-11-06 Vereinigte Deutsche Metallwerke Ag, 6000 Frankfurt Kupfer-Eisen-Legierung für elektrische Letter
DE2419157C3 (de) * 1974-04-20 1979-06-28 W.C. Heraeus Gmbh, 6450 Hanau Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung
US4012765A (en) * 1975-09-24 1977-03-15 Motorola, Inc. Lead frame for plastic encapsulated semiconductor assemblies
GB1561922A (en) * 1976-01-13 1980-03-05 Olin Corp High strength high conductivity copper alloys
JPS5426219A (en) * 1977-07-30 1979-02-27 Furukawa Electric Co Ltd:The Electric conductive copper alloy of superior solderability
JPS5541955A (en) * 1978-09-19 1980-03-25 Furukawa Electric Co Ltd:The Copper alloy for connecting wire
DE3040676A1 (de) * 1980-10-29 1982-05-27 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum herstellen von halbleiteranordnugen

Also Published As

Publication number Publication date
DE3613594A1 (de) 1986-11-13
GB8531523D0 (en) 1986-02-05
DE3613594C3 (de) 1995-02-09
GB2175008A (en) 1986-11-19
DE3613594C2 (fr) 1990-06-21
US4668471A (en) 1987-05-26
FR2581657A1 (fr) 1986-11-14
JPS61257443A (ja) 1986-11-14
GB2175008B (en) 1988-09-28

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse