FR2570878B1 - Dispositif integre monolithique de puissance a semi-conducteur - Google Patents

Dispositif integre monolithique de puissance a semi-conducteur

Info

Publication number
FR2570878B1
FR2570878B1 FR8513746A FR8513746A FR2570878B1 FR 2570878 B1 FR2570878 B1 FR 2570878B1 FR 8513746 A FR8513746 A FR 8513746A FR 8513746 A FR8513746 A FR 8513746A FR 2570878 B1 FR2570878 B1 FR 2570878B1
Authority
FR
France
Prior art keywords
power device
semiconductor power
monolithic semiconductor
integrated monolithic
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8513746A
Other languages
English (en)
Other versions
FR2570878A1 (fr
Inventor
Franco Bertotti
Giuseppe Ferla
Salvatore Musumeci
Salvatore Raciti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2570878A1 publication Critical patent/FR2570878A1/fr
Application granted granted Critical
Publication of FR2570878B1 publication Critical patent/FR2570878B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR8513746A 1984-09-21 1985-09-17 Dispositif integre monolithique de puissance a semi-conducteur Expired FR2570878B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8406620A IT1214806B (it) 1984-09-21 1984-09-21 Dispositivo integrato monolitico di potenza e semiconduttore

Publications (2)

Publication Number Publication Date
FR2570878A1 FR2570878A1 (fr) 1986-03-28
FR2570878B1 true FR2570878B1 (fr) 1988-07-29

Family

ID=11121520

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8513746A Expired FR2570878B1 (fr) 1984-09-21 1985-09-17 Dispositif integre monolithique de puissance a semi-conducteur

Country Status (6)

Country Link
US (1) US4641171A (fr)
JP (1) JPH0732196B2 (fr)
DE (1) DE3533478C2 (fr)
FR (1) FR2570878B1 (fr)
GB (1) GB2168842B (fr)
IT (1) IT1214806B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1188465B (it) * 1986-03-27 1988-01-14 Sgs Microelettronica Spa Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione
IT1215024B (it) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa Processo per la formazione di un dispositivo monolitico a semiconduttore di alta tensione
DE3856174T2 (de) * 1987-10-27 1998-09-03 Nec Corp Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
USRE38510E1 (en) * 1987-12-22 2004-05-04 Stmicroelectronics Srl Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
IT1228900B (it) * 1989-02-27 1991-07-09 Sgs Thomson Microelectronics Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza.
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
IT1241050B (it) * 1990-04-20 1993-12-29 Cons Ric Microelettronica Processo di formazione di una regione sepolta di drain o di collettore in dispositivi monolitici a semiconduttore.
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
JP4775684B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US969010A (en) * 1907-11-12 1910-08-30 Liberty Mfg Company Rotary motor.
GB1263817A (en) * 1969-11-10 1972-02-16 Marconi Co Ltd Improvements in or relating to integrated circuits
JPS51115782A (en) * 1975-04-04 1976-10-12 Hitachi Ltd Semiconductor apparatus
DE2610122C3 (de) * 1976-03-11 1978-11-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Dreipolige Halbleiteranordnung
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
IT1202895B (it) * 1979-02-27 1989-02-15 Ates Componenti Elettron Dispositivo di protezione termica per un componente elettronico a semiconduttore
DE2945273A1 (de) * 1979-11-09 1981-05-21 Robert Bosch Gmbh, 7000 Stuttgart Darligton-transistorschaltung
US4564771A (en) * 1982-07-17 1986-01-14 Robert Bosch Gmbh Integrated Darlington transistor combination including auxiliary transistor and Zener diode

Also Published As

Publication number Publication date
US4641171A (en) 1987-02-03
JPH0732196B2 (ja) 1995-04-10
GB2168842A (en) 1986-06-25
DE3533478C2 (de) 1995-08-17
GB2168842B (en) 1988-03-09
IT8406620A0 (it) 1984-09-21
FR2570878A1 (fr) 1986-03-28
IT1214806B (it) 1990-01-18
DE3533478A1 (de) 1986-04-10
JPS61117860A (ja) 1986-06-05
GB8523264D0 (en) 1985-10-23

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse