FR2566584B1 - Procede de fabrication d'un dispositif a semi-conducteurs avec subdivision d'une pellicule semi-conductrice dudit dispositif possedant une pluralite de regions de conversion photoelectrique - Google Patents

Procede de fabrication d'un dispositif a semi-conducteurs avec subdivision d'une pellicule semi-conductrice dudit dispositif possedant une pluralite de regions de conversion photoelectrique

Info

Publication number
FR2566584B1
FR2566584B1 FR8509389A FR8509389A FR2566584B1 FR 2566584 B1 FR2566584 B1 FR 2566584B1 FR 8509389 A FR8509389 A FR 8509389A FR 8509389 A FR8509389 A FR 8509389A FR 2566584 B1 FR2566584 B1 FR 2566584B1
Authority
FR
France
Prior art keywords
subdivision
manufacturing
photoelectric conversion
semiconductor
conversion regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8509389A
Other languages
English (en)
Other versions
FR2566584A1 (fr
Inventor
Seiichi Kiyama
Hideki Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59126918A external-priority patent/JPS616828A/ja
Priority claimed from JP59135825A external-priority patent/JPH0650781B2/ja
Priority claimed from JP59165379A external-priority patent/JPS6142971A/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of FR2566584A1 publication Critical patent/FR2566584A1/fr
Application granted granted Critical
Publication of FR2566584B1 publication Critical patent/FR2566584B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR8509389A 1984-06-20 1985-06-20 Procede de fabrication d'un dispositif a semi-conducteurs avec subdivision d'une pellicule semi-conductrice dudit dispositif possedant une pluralite de regions de conversion photoelectrique Expired FR2566584B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59126918A JPS616828A (ja) 1984-06-20 1984-06-20 集積型光起電力装置の製造方法
JP59135825A JPH0650781B2 (ja) 1984-06-29 1984-06-29 半導体装置の製造方法
JP59165379A JPS6142971A (ja) 1984-08-06 1984-08-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2566584A1 FR2566584A1 (fr) 1985-12-27
FR2566584B1 true FR2566584B1 (fr) 1988-12-23

Family

ID=27315421

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8509389A Expired FR2566584B1 (fr) 1984-06-20 1985-06-20 Procede de fabrication d'un dispositif a semi-conducteurs avec subdivision d'une pellicule semi-conductrice dudit dispositif possedant une pluralite de regions de conversion photoelectrique

Country Status (2)

Country Link
US (1) US4650524A (fr)
FR (1) FR2566584B1 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
US4894700A (en) * 1985-04-09 1990-01-16 Fuji Xerox Co., Ltd. Image sensor
US4755475A (en) * 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
US4892592A (en) * 1987-03-26 1990-01-09 Solarex Corporation Thin film semiconductor solar cell array and method of making
DE3714920C1 (de) * 1987-05-05 1988-07-14 Messerschmitt Boelkow Blohm Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung
US4743567A (en) * 1987-08-11 1988-05-10 North American Philips Corp. Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators
DE68920448T2 (de) * 1988-02-10 1995-05-18 Kanegafuchi Chemical Ind Photodetektorenanordnung und Lesegerät.
GB2227701B (en) * 1989-02-07 1993-01-06 Stc Plc Selective etching process
JPH0391932A (ja) * 1989-09-04 1991-04-17 Canon Inc 半導体装置の製造方法
US5268037A (en) * 1992-05-21 1993-12-07 United Solar Systems Corporation Monolithic, parallel connected photovoltaic array and method for its manufacture
US5580473A (en) * 1993-06-21 1996-12-03 Sanyo Electric Co. Ltd. Methods of removing semiconductor film with energy beams
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
WO2000060668A1 (fr) * 1999-04-07 2000-10-12 Siemens Solar Gmbh Dispositif et procede permettant de retirer des couches minces recouvrant un materiau support
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
JP2007275962A (ja) * 2006-04-10 2007-10-25 Disco Abrasive Syst Ltd レーザー加工装置
DE102007015767A1 (de) * 2007-03-30 2008-10-02 Oerlikon Optics UK Ltd., Yarnton Methode zum Laserritzen von Solarzellen
DE102008005284A1 (de) * 2008-01-19 2009-07-30 Schott Solar Gmbh Verfahren und Herstellung eines photovoltaischen Moduls
DE102008006166A1 (de) 2008-01-26 2009-07-30 Schott Solar Gmbh Verfahren zur Herstellung eines photovoltaischen Moduls
GB2457720A (en) 2008-02-23 2009-08-26 Philip Thomas Rumsby Method for laser processing on the opposite sides of thin transparent substrates
DE102008015807A1 (de) * 2008-03-27 2009-10-22 Schott Solar Gmbh Verfahren zur Strukturierung der Zinkoxid-Frontelektrodenschicht eines photovoltaischen Moduls
JP2010114190A (ja) * 2008-11-05 2010-05-20 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法および光電変換装置
US20140193941A1 (en) * 2013-01-10 2014-07-10 Samsung Sdi Co., Ltd. Method for manufacturing solar cell
KR102149937B1 (ko) * 2013-02-22 2020-09-01 삼성전자주식회사 광전 소자 및 이미지 센서
CN110910352A (zh) * 2019-11-06 2020-03-24 创新奇智(南京)科技有限公司 基于深度学习的太阳能电池缺陷检测系统及检测方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
US4116721A (en) * 1977-11-25 1978-09-26 International Business Machines Corporation Gate charge neutralization for insulated gate field-effect transistors
JPS5522811A (en) * 1978-08-04 1980-02-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of semiconductor apparatus
DE2837777A1 (de) * 1978-08-30 1980-03-13 Philips Patentverwaltung Verfahren zum herstellen von halbleiterbauelementen
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
JPS58134430A (ja) * 1982-02-04 1983-08-10 Nippon Denso Co Ltd 半導体装置の製造方法
JPS58184732A (ja) * 1982-04-23 1983-10-28 Nec Corp 半導体装置のアニ−ル方法
US4528065A (en) * 1982-11-24 1985-07-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and its manufacturing method
US4456490A (en) * 1983-03-09 1984-06-26 Westinghouse Electric Corp. Laser annealing of MIS devices by back surface laser treatment
US4517403A (en) * 1983-05-16 1985-05-14 Atlantic Richfield Company Series connected solar cells and method of formation
US4514579A (en) * 1984-01-30 1985-04-30 Energy Conversion Devices, Inc. Large area photovoltaic cell and method for producing same
US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer

Also Published As

Publication number Publication date
US4650524A (en) 1987-03-17
FR2566584A1 (fr) 1985-12-27

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