FR2556133A1 - Structure et procede de compensation de courant de fuite pour circuits integres - Google Patents

Structure et procede de compensation de courant de fuite pour circuits integres Download PDF

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Publication number
FR2556133A1
FR2556133A1 FR8418941A FR8418941A FR2556133A1 FR 2556133 A1 FR2556133 A1 FR 2556133A1 FR 8418941 A FR8418941 A FR 8418941A FR 8418941 A FR8418941 A FR 8418941A FR 2556133 A1 FR2556133 A1 FR 2556133A1
Authority
FR
France
Prior art keywords
collector
transistor
bowl
region
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8418941A
Other languages
English (en)
French (fr)
Inventor
Robert M Stitt
Rodney T Burt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Tucson Corp
Original Assignee
Burr Brown Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burr Brown Corp filed Critical Burr Brown Corp
Publication of FR2556133A1 publication Critical patent/FR2556133A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR8418941A 1983-12-05 1984-12-04 Structure et procede de compensation de courant de fuite pour circuits integres Pending FR2556133A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55782683A 1983-12-05 1983-12-05

Publications (1)

Publication Number Publication Date
FR2556133A1 true FR2556133A1 (fr) 1985-06-07

Family

ID=24227040

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8418941A Pending FR2556133A1 (fr) 1983-12-05 1984-12-04 Structure et procede de compensation de courant de fuite pour circuits integres

Country Status (4)

Country Link
JP (1) JPS60124861A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3444376A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2556133A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2150779B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
JPS63274169A (ja) * 1987-05-04 1988-11-11 Rohm Co Ltd 半導体装置
JP2642375B2 (ja) * 1988-01-26 1997-08-20 株式会社東芝 半導体集積回路装置
JP2634679B2 (ja) * 1990-03-12 1997-07-30 シャープ株式会社 Ｐｎｐトランジスタ回路
CN1169226C (zh) * 1997-06-11 2004-09-29 精工爱普生株式会社 半导体装置和液晶显示装置以及含有它们的电子机器
DE10314151B4 (de) * 2003-03-28 2008-04-24 Infineon Technologies Ag Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558267A (en) * 1966-08-04 1971-01-26 Du Pont Method for dyeing high-temperature-resistant polyamides and polyimides
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN, vol. 29, no. 14, juillet 1981, page 135, Denville, NT, US; T. REGAN: "Independent op amp on quad chip heats substrate, cuts drift of other 3 amps" *
IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. SC-14, no. 6, décembre 1979, pages 1059-1065, IEEE, New York, US; G. ERDI: "A 300V/mus monolithic voltage follower" *

Also Published As

Publication number Publication date
DE3444376A1 (de) 1985-08-01
GB2150779B (en) 1987-03-04
JPS60124861A (ja) 1985-07-03
GB8417443D0 (en) 1984-08-15
GB2150779A (en) 1985-07-03
JPH0556660B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-20

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