FR2535898A3 - Module de transistor de puissance - Google Patents

Module de transistor de puissance Download PDF

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Publication number
FR2535898A3
FR2535898A3 FR8317799A FR8317799A FR2535898A3 FR 2535898 A3 FR2535898 A3 FR 2535898A3 FR 8317799 A FR8317799 A FR 8317799A FR 8317799 A FR8317799 A FR 8317799A FR 2535898 A3 FR2535898 A3 FR 2535898A3
Authority
FR
France
Prior art keywords
power transistor
metallization
housing
ceramic plate
transistor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8317799A
Other languages
English (en)
French (fr)
Other versions
FR2535898B3 (enrdf_load_stackoverflow
Inventor
Bernd Leukel
Klaus Bunk
Hubert Hettmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri AG Germany
Original Assignee
BBC Brown Boveri AG Switzerland
BBC Brown Boveri AG Germany
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, BBC Brown Boveri AG Germany filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2535898A3 publication Critical patent/FR2535898A3/fr
Application granted granted Critical
Publication of FR2535898B3 publication Critical patent/FR2535898B3/fr
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
FR8317799A 1982-11-10 1983-11-09 Module de transistor de puissance Granted FR2535898A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823241508 DE3241508A1 (de) 1982-11-10 1982-11-10 Leistungstransistor-modul

Publications (2)

Publication Number Publication Date
FR2535898A3 true FR2535898A3 (fr) 1984-05-11
FR2535898B3 FR2535898B3 (enrdf_load_stackoverflow) 1984-10-12

Family

ID=6177732

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8317799A Granted FR2535898A3 (fr) 1982-11-10 1983-11-09 Module de transistor de puissance

Country Status (3)

Country Link
JP (1) JPS5999753A (enrdf_load_stackoverflow)
DE (1) DE3241508A1 (enrdf_load_stackoverflow)
FR (1) FR2535898A3 (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166968A1 (de) * 1984-06-01 1986-01-08 Anton Piller GmbH & Co. KG Halbleiter-Modul für eine schnelle Schaltanordnung
EP0205746A3 (en) * 1985-06-15 1987-07-22 Brown, Boveri & Cie Aktiengesellschaft Semiconductor power module comprising a ceramic substrate
EP0237739A3 (de) * 1986-02-15 1989-03-15 Asea Brown Boveri Aktiengesellschaft Leistungshalbleitermodul und Verfahren zur Herstellung des Moduls
EP0243637A3 (en) * 1986-03-26 1990-05-16 Asea Brown Boveri Aktiengesellschaft Semi-conductor power module
EP0398108A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Aktiengesellschaft Kunststoffgehäuse und Leistungshalbleitermodul mit diesem Gehäuse
EP0417747A3 (en) * 1989-09-11 1991-08-21 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
FR2660826A1 (fr) * 1990-04-05 1991-10-11 Mcb Sa Boitier economique pour composants electroniques de puissance, a fixer sur dissipateur thermique et son procede de fabrication.
EP0513410A1 (de) * 1991-05-15 1992-11-19 IXYS Semiconductor GmbH Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls
FR2679070A1 (fr) * 1991-07-11 1993-01-15 Mitsubishi Electric Corp Dispositif semiconducteur du type attaque par la tension en particulier mofset, ainsi que son procede de fabrication.
US5202578A (en) * 1989-09-11 1993-04-13 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
FR2726940A1 (fr) * 1994-05-31 1996-05-15 Mitsubishi Electric Corp Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif
WO1998052221A1 (de) * 1997-05-09 1998-11-19 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Leistungshalbleitermodul mit keramiksubstrat

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239051A (ja) * 1984-05-11 1985-11-27 Mitsubishi Electric Corp 半導体装置
DE3505086A1 (de) * 1985-02-14 1986-08-28 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleitermodul mit einem kunststoffgehaeuse
DE3528427A1 (de) * 1985-08-08 1987-04-02 Bbc Brown Boveri & Cie Elektrische verbindungslasche fuer halbleiterbauelemente
DE3621994A1 (de) * 1986-07-01 1988-01-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
DE3717489A1 (de) * 1987-05-23 1988-12-01 Asea Brown Boveri Leistungshalbleitermodul und verfahren zur herstellung des moduls
JPS6442160A (en) * 1987-07-28 1989-02-14 Sgs Thomson Microelectronics Semiconductor device
GB2249869B (en) * 1990-09-17 1994-10-12 Fuji Electric Co Ltd Semiconductor device
US5243217A (en) * 1990-11-03 1993-09-07 Fuji Electric Co., Ltd. Sealed semiconductor device with protruding portion
DE4105155C2 (de) * 1991-02-20 1994-07-07 Export Contor Ausenhandelsgese Stromrichterschaltungsanordnung
JPH0515450U (ja) * 1991-08-06 1993-02-26 株式会社三社電機製作所 電力用半導体モジユール
JPH062714U (ja) * 1992-06-03 1994-01-14 株式会社三社電機製作所 電力用半導体モジュール
JP2838625B2 (ja) * 1992-09-08 1998-12-16 株式会社日立製作所 半導体モジュール
AT406434B (de) * 1993-12-23 2000-05-25 Ixys Semiconductor Gmbh Vorrichtung zur umformung eines dreiphasigen spannungssystems in eine vorgebbare, einen verbraucher speisende gleichspannung
US5744861A (en) * 1995-11-13 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
JP3168901B2 (ja) * 1996-02-22 2001-05-21 株式会社日立製作所 パワー半導体モジュール
CN101675520B (zh) * 2007-05-18 2011-07-20 株式会社三社电机制作所 电力用半导体模块

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8203300U1 (de) * 1982-06-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit Keramiksubstrat
DE8214214U1 (de) * 1982-08-26 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleiter mit einem quaderförmigen Gehäuse
US3839660A (en) * 1973-02-05 1974-10-01 Gen Motors Corp Power semiconductor device package
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US4394530A (en) * 1977-09-19 1983-07-19 Kaufman Lance R Power switching device having improved heat dissipation means
DE2819327C2 (de) * 1978-05-03 1984-10-31 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbaueinheit
US4218694A (en) * 1978-10-23 1980-08-19 Ford Motor Company Rectifying apparatus including six semiconductor diodes sandwiched between ceramic wafers
DE3028178C2 (de) * 1980-07-25 1985-05-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleiter-Modul
FR2503526A1 (fr) * 1981-04-03 1982-10-08 Silicium Semiconducteur Ssc Boitier et procede de montage et d'interconnexion de composants semiconducteurs de moyenne puissance en boitier unique.
DE3204167A1 (de) * 1982-02-06 1983-08-11 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166968A1 (de) * 1984-06-01 1986-01-08 Anton Piller GmbH & Co. KG Halbleiter-Modul für eine schnelle Schaltanordnung
EP0205746A3 (en) * 1985-06-15 1987-07-22 Brown, Boveri & Cie Aktiengesellschaft Semiconductor power module comprising a ceramic substrate
EP0237739A3 (de) * 1986-02-15 1989-03-15 Asea Brown Boveri Aktiengesellschaft Leistungshalbleitermodul und Verfahren zur Herstellung des Moduls
EP0243637A3 (en) * 1986-03-26 1990-05-16 Asea Brown Boveri Aktiengesellschaft Semi-conductor power module
EP0398108A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Aktiengesellschaft Kunststoffgehäuse und Leistungshalbleitermodul mit diesem Gehäuse
US5202578A (en) * 1989-09-11 1993-04-13 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
EP0417747A3 (en) * 1989-09-11 1991-08-21 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
FR2660826A1 (fr) * 1990-04-05 1991-10-11 Mcb Sa Boitier economique pour composants electroniques de puissance, a fixer sur dissipateur thermique et son procede de fabrication.
WO1991015873A1 (fr) * 1990-04-05 1991-10-17 Mcb Societe Anonyme Boitier economique pour composants electroniques de puissance a fixer sur dissipateur thermique et son procede de fabrication
EP0513410A1 (de) * 1991-05-15 1992-11-19 IXYS Semiconductor GmbH Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls
FR2679070A1 (fr) * 1991-07-11 1993-01-15 Mitsubishi Electric Corp Dispositif semiconducteur du type attaque par la tension en particulier mofset, ainsi que son procede de fabrication.
FR2726940A1 (fr) * 1994-05-31 1996-05-15 Mitsubishi Electric Corp Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif
WO1998052221A1 (de) * 1997-05-09 1998-11-19 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Leistungshalbleitermodul mit keramiksubstrat

Also Published As

Publication number Publication date
DE3241508A1 (de) 1984-05-10
JPH0476212B2 (enrdf_load_stackoverflow) 1992-12-03
JPS5999753A (ja) 1984-06-08
FR2535898B3 (enrdf_load_stackoverflow) 1984-10-12
DE3241508C2 (enrdf_load_stackoverflow) 1989-03-30

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