WO1998052221A1 - Leistungshalbleitermodul mit keramiksubstrat - Google Patents
Leistungshalbleitermodul mit keramiksubstrat Download PDFInfo
- Publication number
- WO1998052221A1 WO1998052221A1 PCT/DE1998/001266 DE9801266W WO9852221A1 WO 1998052221 A1 WO1998052221 A1 WO 1998052221A1 DE 9801266 W DE9801266 W DE 9801266W WO 9852221 A1 WO9852221 A1 WO 9852221A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power semiconductor
- semiconductor module
- housing
- connection elements
- plastic housing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the invention relates to a power semiconductor module with a plastic housing, in which a substrate is used as the housing base, which substrate consists of a ceramic plate which is provided with a metallization on the upper and lower side, the metallization on the upper side facing the housing interior the ceramic plate to form
- Conductor tracks is structured and is equipped with semiconductor components and connecting elements, and in which connection elements for external connections are introduced.
- connection elements for the external connections are arranged in the plastic housing.
- the connection elements which usually consist of copper, are injected into the plastic housing.
- plastic has the property of cooling, i.e. so to shrink after spraying. This means that the connecting elements are generally not firmly anchored in the plastic.
- Wires are bonded to the connection elements inside the housing, the other end of which is bonded to the semiconductor components. These wires are usually made of aluminum.
- the plastic shrinks after spraying the poor mechanical fixation of the connection elements in the plastic housing can lead to the release of the bond connection inside the housing. This leads to the failure of the power semiconductor module.
- the object of the present invention is therefore to provide a power semiconductor module of the type mentioned at the outset, in which there is very good mechanical fixing of the connection elements, so that the problems mentioned above do not occur. It is also the task of the present Invention to further simplify the manufacturing process of the plastic housing.
- connection elements are pressed into openings in the plastic housing.
- this measure fixes the metal parts in the plastic housing in a relatively simple process. In particular, this does not require a separate injection mold, into which the connection elements are inserted before each injection process and then overmolded.
- connection elements are pressed into the openings of the plastic housing to anchor them significantly better, so that reliable bond connections are made possible inside the housing.
- connection elements have lugs which rest on the inside of the plastic housing and fix the position of the connection elements. These lugs preferably have the shape of barbs, so that the connection elements are guided closely in the openings and are secured by pulling them out. It is also conceivable to provide the connecting elements with offsets which fix the connecting elements in the openings.
- connection elements expediently have regions in the interior of the housing which run approximately parallel to the housing base. This makes bonding much easier.
- the plastic housing typically consists of a frame and a cover, the connecting elements being arranged in the frame.
- the substrate is covered within the housing with a potting compound, which is used to encapsulate the substrate in moisture density.
- FIG. 1 shows a cross section through a conventional power semiconductor module and 2 shows an enlarged partial view of a frame of a plastic housing according to an embodiment of the invention.
- the power semiconductor module 1 consists of a plastic housing 2, into which a substrate 4 is inserted as the housing base 3.
- the substrate 4 consists of a ceramic plate 5, which is provided on the upper side 6 and on the lower side 7 with a metallization.
- the metallization on the upper side 6 faces the interior of the housing and is structured to form conductor tracks.
- Semiconductor components 10 are applied to this upper side 6 of the ceramic plate 5. These semiconductor components are generally power semiconductor components such as IGBTs, MCTs, power transistors or power diodes. Furthermore, there are connecting elements 8, which have the shape of aluminum wires. These connecting elements 8 are applied to the semiconductor components 10 via bonding processes.
- the plastic housing 2 consists of a frame 9 and a cover 10.
- a frame 9 connecting elements for external connections are injected according to the prior art.
- connection elements 11 are injected into the plastic frame 9 with a separate injection mold. In this injection mold, before each injection gang inserted the relevant connector and then overmolded.
- FIG. 2 shows a plastic frame according to the present invention, in which the connection elements 11 are pressed into openings 12 in the plastic frame 9.
- the connection elements 11 here have lugs 13 which rest on the inside of the plastic housing 2. As a result, the connection elements 11 are fixed in their position. These lugs 13 have the function of barbs, which secure the connection elements 11 against unintentional pulling out. As a result, the bond connections between the connection elements 11 and the semiconductor components 10 or connection elements 8 are secured against destruction.
- connection elements 11 run in the interior of the housing approximately parallel to the housing base 3.
- the plastic housing 2 shown here consists of a plastic frame and a cover.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54868598A JP2001525126A (ja) | 1997-05-09 | 1998-05-07 | セラミック基板を備えた電力用半導体モジュール |
EP98933467A EP0980586A1 (de) | 1997-05-09 | 1998-05-07 | Leistungshalbleitermodul mit keramiksubstrat |
US10/429,605 US6828600B2 (en) | 1997-05-09 | 2003-05-05 | Power semiconductor module with ceramic substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19719703.5 | 1997-05-09 | ||
DE19719703A DE19719703C5 (de) | 1997-05-09 | 1997-05-09 | Leistungshalbleitermodul mit Keramiksubstrat |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US43659899A Continuation | 1997-05-09 | 1999-11-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998052221A1 true WO1998052221A1 (de) | 1998-11-19 |
Family
ID=7829149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1998/001266 WO1998052221A1 (de) | 1997-05-09 | 1998-05-07 | Leistungshalbleitermodul mit keramiksubstrat |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0980586A1 (de) |
JP (1) | JP2001525126A (de) |
DE (1) | DE19719703C5 (de) |
WO (1) | WO1998052221A1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1596434A1 (de) * | 2003-09-04 | 2005-11-16 | Matsushita Electric Industrial Co., Ltd. | Halbleiterbauelement |
DE10008572B4 (de) * | 2000-02-24 | 2007-08-09 | Infineon Technologies Ag | Verbindungseinrichtung für Leistungshalbleitermodule |
US8519532B2 (en) | 2011-09-12 | 2013-08-27 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
US8963321B2 (en) | 2011-09-12 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19914741A1 (de) * | 1999-03-31 | 2000-10-12 | Eupec Gmbh & Co Kg | Leistungshalbleitermodul |
DE10045696B4 (de) * | 2000-09-15 | 2005-10-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Schaltungsanordnung |
DE10237561C1 (de) | 2002-08-16 | 2003-10-16 | Semikron Elektronik Gmbh | Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule |
DE10258570B4 (de) * | 2002-12-14 | 2005-11-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE102004018477B4 (de) * | 2004-04-16 | 2008-08-21 | Infineon Technologies Ag | Halbleitermodul |
DE102004057421B4 (de) * | 2004-11-27 | 2009-07-09 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul für hohe Umgebungstemperaturen und Verfahren zu seiner Herstellung |
US7995356B2 (en) | 2005-08-26 | 2011-08-09 | Siemens Aktiengesellschaft | Power semiconductor module comprising load connection elements applied to circuit carriers |
DE102005047566C5 (de) * | 2005-10-05 | 2011-06-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleiterbauelement und mit einem Gehäuse sowie Herstellungsverfahren hierzu |
DE102005050534B4 (de) * | 2005-10-21 | 2008-08-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE102006006423B4 (de) * | 2006-02-13 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und zugehöriges Herstellungsverfahren |
DE102006006425B4 (de) * | 2006-02-13 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
DE102006006424B4 (de) | 2006-02-13 | 2011-11-17 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren |
DE102006006421B4 (de) * | 2006-02-13 | 2014-09-11 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE102006027481C5 (de) | 2006-06-14 | 2012-11-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen |
DE102006058694B4 (de) * | 2006-12-13 | 2011-06-16 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Kontaktfedern |
DE102007003587B4 (de) | 2007-01-24 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Druckkörper |
DE102007010883A1 (de) * | 2007-03-06 | 2008-09-18 | Infineon Technologies Ag | Leistungshalbleiteranordnung und Verfahren zu dessen Herstellung |
JP4985116B2 (ja) * | 2007-03-08 | 2012-07-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP4985012B2 (ja) * | 2007-03-22 | 2012-07-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102007026768A1 (de) | 2007-06-09 | 2008-12-11 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes dreiphasiges Stromrichtermodul |
ATE533182T1 (de) | 2007-09-11 | 2011-11-15 | Siemens Ag | Leistungshalbleitermodul |
DE102007054709B4 (de) * | 2007-11-16 | 2014-11-13 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Substrat und mit einer Druckeinrichtung |
JP4894784B2 (ja) | 2008-02-27 | 2012-03-14 | 三菱電機株式会社 | 半導体装置とその製造方法 |
DE102008014113B4 (de) | 2008-03-13 | 2014-04-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
DE102008014112A1 (de) | 2008-03-13 | 2009-10-01 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
EP2144284A1 (de) | 2008-07-11 | 2010-01-13 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Anschlusskontaktes an einem Halbleiterbauelement für die Leistungselektronik und elektronisches Bauteil mit einem auf diese Weise an einem Halblei-terbauelement hergestellten Anschlusskontakt |
US8134838B2 (en) | 2008-07-21 | 2012-03-13 | Infineon Technologies Ag | Semiconductor module and method |
DE102008057832B4 (de) | 2008-11-19 | 2010-07-01 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit vorgespannter Hilfskontaktfeder |
DE102009057145B4 (de) | 2009-12-05 | 2013-12-19 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul mit teilweise bandartigen Lastanschlusselementen |
DE102009057146B4 (de) | 2009-12-05 | 2013-09-26 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul mit Hybriddruckspeicher |
JP6645134B2 (ja) * | 2015-11-16 | 2020-02-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2535898A3 (fr) * | 1982-11-10 | 1984-05-11 | Bbc Brown Boveri & Cie | Module de transistor de puissance |
JPS60157243A (ja) * | 1984-01-25 | 1985-08-17 | Mitsubishi Electric Corp | 半導体装置 |
DE3604313A1 (de) * | 1986-02-12 | 1987-08-13 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
EP0438165A2 (de) * | 1990-01-18 | 1991-07-24 | Kabushiki Kaisha Toshiba | Teile einer Halbleitervorrichtung |
FR2660826A1 (fr) * | 1990-04-05 | 1991-10-11 | Mcb Sa | Boitier economique pour composants electroniques de puissance, a fixer sur dissipateur thermique et son procede de fabrication. |
JPH04111346A (ja) * | 1990-08-30 | 1992-04-13 | Mitsubishi Electric Corp | 半導体装置 |
JPH04326753A (ja) * | 1991-04-26 | 1992-11-16 | Sharp Corp | 半導体装置の製造方法 |
EP0513410A1 (de) * | 1991-05-15 | 1992-11-19 | IXYS Semiconductor GmbH | Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243217A (en) * | 1990-11-03 | 1993-09-07 | Fuji Electric Co., Ltd. | Sealed semiconductor device with protruding portion |
US5408128A (en) * | 1993-09-15 | 1995-04-18 | International Rectifier Corporation | High power semiconductor device module with low thermal resistance and simplified manufacturing |
JP2720008B2 (ja) * | 1993-11-29 | 1998-02-25 | 株式会社三社電機製作所 | 電力用半導体モジュール |
-
1997
- 1997-05-09 DE DE19719703A patent/DE19719703C5/de not_active Expired - Lifetime
-
1998
- 1998-05-07 JP JP54868598A patent/JP2001525126A/ja active Pending
- 1998-05-07 WO PCT/DE1998/001266 patent/WO1998052221A1/de not_active Application Discontinuation
- 1998-05-07 EP EP98933467A patent/EP0980586A1/de not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2535898A3 (fr) * | 1982-11-10 | 1984-05-11 | Bbc Brown Boveri & Cie | Module de transistor de puissance |
JPS60157243A (ja) * | 1984-01-25 | 1985-08-17 | Mitsubishi Electric Corp | 半導体装置 |
DE3604313A1 (de) * | 1986-02-12 | 1987-08-13 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
EP0438165A2 (de) * | 1990-01-18 | 1991-07-24 | Kabushiki Kaisha Toshiba | Teile einer Halbleitervorrichtung |
FR2660826A1 (fr) * | 1990-04-05 | 1991-10-11 | Mcb Sa | Boitier economique pour composants electroniques de puissance, a fixer sur dissipateur thermique et son procede de fabrication. |
JPH04111346A (ja) * | 1990-08-30 | 1992-04-13 | Mitsubishi Electric Corp | 半導体装置 |
JPH04326753A (ja) * | 1991-04-26 | 1992-11-16 | Sharp Corp | 半導体装置の製造方法 |
EP0513410A1 (de) * | 1991-05-15 | 1992-11-19 | IXYS Semiconductor GmbH | Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 009, no. 325 (E - 368) 20 December 1985 (1985-12-20) * |
PATENT ABSTRACTS OF JAPAN vol. 016, no. 354 (E - 1242) 30 July 1992 (1992-07-30) * |
PATENT ABSTRACTS OF JAPAN vol. 017, no. 169 (E - 1344) 31 March 1993 (1993-03-31) * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10008572B4 (de) * | 2000-02-24 | 2007-08-09 | Infineon Technologies Ag | Verbindungseinrichtung für Leistungshalbleitermodule |
EP1596434A1 (de) * | 2003-09-04 | 2005-11-16 | Matsushita Electric Industrial Co., Ltd. | Halbleiterbauelement |
EP1596434A4 (de) * | 2003-09-04 | 2008-09-24 | Matsushita Electric Ind Co Ltd | Halbleiterbauelement |
US7786565B2 (en) | 2003-09-04 | 2010-08-31 | Panasonic Corporation | Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor |
US8519532B2 (en) | 2011-09-12 | 2013-08-27 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
US8963321B2 (en) | 2011-09-12 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
Also Published As
Publication number | Publication date |
---|---|
DE19719703C5 (de) | 2005-11-17 |
JP2001525126A (ja) | 2001-12-04 |
DE19719703A1 (de) | 1998-11-12 |
DE19719703C2 (de) | 2003-04-10 |
EP0980586A1 (de) | 2000-02-23 |
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