FR2507819A1 - Dispositif de protection contre les surcharges pour circuit integre et circuit integre de protection contre les surcharges - Google Patents

Dispositif de protection contre les surcharges pour circuit integre et circuit integre de protection contre les surcharges Download PDF

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Publication number
FR2507819A1
FR2507819A1 FR8210348A FR8210348A FR2507819A1 FR 2507819 A1 FR2507819 A1 FR 2507819A1 FR 8210348 A FR8210348 A FR 8210348A FR 8210348 A FR8210348 A FR 8210348A FR 2507819 A1 FR2507819 A1 FR 2507819A1
Authority
FR
France
Prior art keywords
transistor
type
region
highly doped
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8210348A
Other languages
English (en)
French (fr)
Other versions
FR2507819B1 (enExample
Inventor
Jack Rudolph Harford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2507819A1 publication Critical patent/FR2507819A1/fr
Application granted granted Critical
Publication of FR2507819B1 publication Critical patent/FR2507819B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Protection Of Static Devices (AREA)
FR8210348A 1981-06-15 1982-06-14 Dispositif de protection contre les surcharges pour circuit integre et circuit integre de protection contre les surcharges Granted FR2507819A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/273,325 US4463369A (en) 1981-06-15 1981-06-15 Integrated circuit overload protection device

Publications (2)

Publication Number Publication Date
FR2507819A1 true FR2507819A1 (fr) 1982-12-17
FR2507819B1 FR2507819B1 (enExample) 1985-04-05

Family

ID=23043453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8210348A Granted FR2507819A1 (fr) 1981-06-15 1982-06-14 Dispositif de protection contre les surcharges pour circuit integre et circuit integre de protection contre les surcharges

Country Status (11)

Country Link
US (1) US4463369A (enExample)
JP (2) JPS57211768A (enExample)
KR (1) KR840000982A (enExample)
AT (1) ATA230282A (enExample)
CA (1) CA1185379A (enExample)
DE (1) DE3221363A1 (enExample)
ES (1) ES8304384A1 (enExample)
FI (1) FI822030A7 (enExample)
FR (1) FR2507819A1 (enExample)
GB (2) GB2101402B (enExample)
IT (1) IT1151259B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2582861A1 (fr) * 1985-05-30 1986-12-05 Sgs Microelettronica Spa Dispositif de protection contre des decharges electrostatiques, notamment pour des circuits integres bipolaires
EP0151354A3 (en) * 1983-12-29 1987-07-29 Fujitsu Limited Programmable read-only memory devices (PROM)
EP1255301A1 (en) * 2001-04-27 2002-11-06 Interuniversitair Micro-Elektronica Centrum Vzw Layout configurable electrostatic discharge device for integrated circuits

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4595944A (en) * 1983-12-29 1986-06-17 International Business Machines Corporation Resistor structure for transistor having polysilicon base contacts
US4949150A (en) * 1986-04-17 1990-08-14 Exar Corporation Programmable bonding pad with sandwiched silicon oxide and silicon nitride layers
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US5066869A (en) * 1990-04-09 1991-11-19 Unitrode Corporation Reset circuit with PNP saturation detector
DE69213485T2 (de) 1991-01-18 1997-02-13 Canon Kk Tintenstrahlaufzeichnungsverfahren und Vorrichtung mit thermischer Energie
JP3053936B2 (ja) * 1991-12-04 2000-06-19 キヤノン株式会社 液体噴射記録ヘッド用基体、該基体の製造方法、該基体を用いた液体噴射記録ヘッド、該記録ヘッドの製造方法及び該記録ヘッドを具備する記録装置
DE19743230C1 (de) * 1997-09-30 1999-04-15 Siemens Ag Integrierte Halbleiterschaltung mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
DE19917155C1 (de) * 1999-04-16 2000-06-21 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
JP3768079B2 (ja) 2000-07-25 2006-04-19 シャープ株式会社 トランジスタ
KR100448312B1 (ko) * 2002-10-25 2004-09-13 금강 쥬얼리 (주) 악세서리용 장식띠 성형장치 및 이를 이용한 장식띠성형방법
KR101694242B1 (ko) * 2015-12-15 2017-01-09 현대오트론 주식회사 보호 회로를 포함하는 전력 증폭기

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027180A (en) * 1975-01-10 1977-05-31 Plessey Handel Und Investments A.G. Integrated circuit transistor arrangement having a low charge storage period
EP0029538A1 (de) * 1979-11-26 1981-06-03 Siemens Aktiengesellschaft Integrierbare Schaltung zur Verhinderung des Sättigungszustandes eines Transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1452344A1 (de) * 1965-12-21 1969-03-13 Kress Dr Ing Herwig Verfahren zur Berippung von Waermeaustauscherflaechen mit Wellbaendern,Vorrichtung zur Durchfuehrung des Verfahrens sowie rohr- bzw. plattenfoermige Elemente von Waermeaustauschern mit Wellbandrippen
US3611067A (en) * 1970-04-20 1971-10-05 Fairchild Camera Instr Co Complementary npn/pnp structure for monolithic integrated circuits
JPS5017180A (enExample) * 1973-06-13 1975-02-22
GB1507061A (en) * 1974-03-26 1978-04-12 Signetics Corp Semiconductors
US3971060A (en) * 1974-07-12 1976-07-20 Texas Instruments Incorporated TTL coupling transistor
JPS5153483A (enExample) * 1974-11-06 1976-05-11 Hitachi Ltd
JPS5153449A (enExample) * 1974-11-06 1976-05-11 Matsushita Electric Industrial Co Ltd
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4118640A (en) * 1976-10-22 1978-10-03 National Semiconductor Corporation JFET base junction transistor clamp
JPS5568708A (en) * 1978-11-17 1980-05-23 Matsushita Electric Ind Co Ltd Signal amplifier circuit
JPS5674958A (en) * 1979-11-26 1981-06-20 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4390890A (en) * 1980-06-26 1983-06-28 International Business Machines Corporation Saturation-limited bipolar transistor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027180A (en) * 1975-01-10 1977-05-31 Plessey Handel Und Investments A.G. Integrated circuit transistor arrangement having a low charge storage period
EP0029538A1 (de) * 1979-11-26 1981-06-03 Siemens Aktiengesellschaft Integrierbare Schaltung zur Verhinderung des Sättigungszustandes eines Transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0151354A3 (en) * 1983-12-29 1987-07-29 Fujitsu Limited Programmable read-only memory devices (PROM)
FR2582861A1 (fr) * 1985-05-30 1986-12-05 Sgs Microelettronica Spa Dispositif de protection contre des decharges electrostatiques, notamment pour des circuits integres bipolaires
EP1255301A1 (en) * 2001-04-27 2002-11-06 Interuniversitair Micro-Elektronica Centrum Vzw Layout configurable electrostatic discharge device for integrated circuits

Also Published As

Publication number Publication date
KR840000982A (ko) 1984-03-26
IT1151259B (it) 1986-12-17
IT8221625A0 (it) 1982-06-01
GB2142778B (en) 1985-07-24
FI822030A0 (fi) 1982-06-08
GB2142778A (en) 1985-01-23
GB2101402A (en) 1983-01-12
GB2101402B (en) 1985-07-17
JPS6035569A (ja) 1985-02-23
ATA230282A (de) 1989-07-15
FI822030A7 (fi) 1982-12-16
JPS57211768A (en) 1982-12-25
US4463369A (en) 1984-07-31
GB8419706D0 (en) 1984-09-05
ES512917A0 (es) 1983-02-16
ES8304384A1 (es) 1983-02-16
CA1185379A (en) 1985-04-09
DE3221363A1 (de) 1983-01-05
FR2507819B1 (enExample) 1985-04-05

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