FR2494040A1 - Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles - Google Patents

Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles Download PDF

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Publication number
FR2494040A1
FR2494040A1 FR8119535A FR8119535A FR2494040A1 FR 2494040 A1 FR2494040 A1 FR 2494040A1 FR 8119535 A FR8119535 A FR 8119535A FR 8119535 A FR8119535 A FR 8119535A FR 2494040 A1 FR2494040 A1 FR 2494040A1
Authority
FR
France
Prior art keywords
gate
field effect
transistor
mosfet
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8119535A
Other languages
English (en)
French (fr)
Other versions
FR2494040B1 (enExample
Inventor
Masahiro Ogata
Osamu Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2494040A1 publication Critical patent/FR2494040A1/fr
Application granted granted Critical
Publication of FR2494040B1 publication Critical patent/FR2494040B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR8119535A 1980-11-07 1981-10-16 Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles Granted FR2494040A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155863A JPS5780774A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
FR2494040A1 true FR2494040A1 (fr) 1982-05-14
FR2494040B1 FR2494040B1 (enExample) 1985-05-24

Family

ID=15615145

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8119535A Granted FR2494040A1 (fr) 1980-11-07 1981-10-16 Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles

Country Status (8)

Country Link
US (1) US4437135A (enExample)
JP (1) JPS5780774A (enExample)
DE (1) DE3144169A1 (enExample)
FR (1) FR2494040A1 (enExample)
GB (1) GB2087151B (enExample)
HK (1) HK54386A (enExample)
IT (1) IT1140270B (enExample)
MY (1) MY8600690A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106417B1 (en) * 1982-10-20 1988-12-28 Koninklijke Philips Electronics N.V. Integrated circuit comprising an input protection device
US4496857A (en) * 1982-11-01 1985-01-29 International Business Machines Corporation High speed low power MOS buffer circuit for converting TTL logic signal levels to MOS logic signal levels
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
US4924293A (en) * 1985-05-24 1990-05-08 Hitachi, Ltd. Semiconductor integrated circuit device
JP2874097B2 (ja) * 1989-10-24 1999-03-24 富士通株式会社 半導体メモリ装置
KR920009015A (ko) * 1990-10-29 1992-05-28 김광호 반도체 칩의 보호회로
JP2001244416A (ja) * 2000-02-29 2001-09-07 Hitachi Ltd 信号処理用半導体集積回路
DE10206999A1 (de) * 2002-02-19 2003-08-28 Forschungszentrum Juelich Gmbh Verfahren zur Überwachung von technischen Trennprozessen sowie Meßeinrichtung zur Durchführung dieses Verfahrens
US12087355B2 (en) 2021-12-17 2024-09-10 Mediatek Inc. Adaptive control circuit of static random access memory

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
FR2356273A1 (fr) * 1976-06-24 1978-01-20 American Micro Syst Dispositif de protection d'entree pour semi-conducteurs mos
JPS5568736A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Mis input protective circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2015815B2 (de) * 1969-04-21 1976-06-24 Rca Corp., New York, N.Y. (V.St.A.) Schutzschaltung fuer einen integrierten schaltkreis
US3746946A (en) 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
US3819952A (en) 1973-01-29 1974-06-25 Mitsubishi Electric Corp Semiconductor device
GB1518984A (en) * 1974-07-16 1978-07-26 Nippon Electric Co Integrated circuit
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPS6048106B2 (ja) * 1979-12-24 1985-10-25 富士通株式会社 半導体集積回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
FR2356273A1 (fr) * 1976-06-24 1978-01-20 American Micro Syst Dispositif de protection d'entree pour semi-conducteurs mos
JPS5568736A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Mis input protective circuit

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ABJP/80 *
EXBK/71 *

Also Published As

Publication number Publication date
FR2494040B1 (enExample) 1985-05-24
IT8124890A0 (it) 1981-11-05
HK54386A (en) 1986-08-01
JPS6336146B2 (enExample) 1988-07-19
GB2087151B (en) 1984-07-04
MY8600690A (en) 1986-12-31
US4437135A (en) 1984-03-13
DE3144169A1 (de) 1982-07-22
IT1140270B (it) 1986-09-24
GB2087151A (en) 1982-05-19
JPS5780774A (en) 1982-05-20

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