FR2484646A1 - Detecteur de gaz a couche mince et a semiconducteurs a element de chauffage integre - Google Patents
Detecteur de gaz a couche mince et a semiconducteurs a element de chauffage integre Download PDFInfo
- Publication number
- FR2484646A1 FR2484646A1 FR8108444A FR8108444A FR2484646A1 FR 2484646 A1 FR2484646 A1 FR 2484646A1 FR 8108444 A FR8108444 A FR 8108444A FR 8108444 A FR8108444 A FR 8108444A FR 2484646 A1 FR2484646 A1 FR 2484646A1
- Authority
- FR
- France
- Prior art keywords
- thin film
- gas detector
- film gas
- semiconductor
- detector according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 1
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 1
- -1 oxy- Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3019387A DE3019387C2 (de) | 1980-05-21 | 1980-05-21 | Dünnschicht-Halbleiter-Gassensor mit einem in den Sensoraufbau integrierten Heizelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2484646A1 true FR2484646A1 (fr) | 1981-12-18 |
| FR2484646B1 FR2484646B1 (enExample) | 1985-02-08 |
Family
ID=6102965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8108444A Granted FR2484646A1 (fr) | 1980-05-21 | 1981-04-28 | Detecteur de gaz a couche mince et a semiconducteurs a element de chauffage integre |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4338281A (enExample) |
| JP (1) | JPS5717849A (enExample) |
| DE (1) | DE3019387C2 (enExample) |
| FR (1) | FR2484646A1 (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766347A (en) * | 1980-10-09 | 1982-04-22 | Hitachi Ltd | Detector for mixture gas |
| JPS57178147A (en) * | 1981-04-27 | 1982-11-02 | Nippon Soken Inc | Detector for gaseous component |
| JPS57194345A (en) * | 1981-05-25 | 1982-11-29 | Nippon Soken Inc | Gas component detector |
| JPS57200844A (en) * | 1981-06-04 | 1982-12-09 | Ngk Insulators Ltd | Oxygen concentration detector |
| US4387165A (en) * | 1982-04-22 | 1983-06-07 | Youngblood James L | H2 S Detector having semiconductor and noncontinuous inert film deposited thereon |
| DE3217883A1 (de) * | 1982-05-12 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Gassensor |
| US4453151A (en) * | 1982-06-07 | 1984-06-05 | Leary David J | Semiconductor gas sensor |
| US4601914A (en) * | 1982-06-07 | 1986-07-22 | Airtech, Inc. | Method for fabricating a semiconductor gas sensor |
| JPS5927253A (ja) * | 1982-08-06 | 1984-02-13 | Shinei Kk | ガスセンサおよびその製造法 |
| US4442420A (en) * | 1982-09-30 | 1984-04-10 | Ford Motor Company | Partial pressure of oxygen sensor-II |
| JPS59143945A (ja) * | 1983-02-07 | 1984-08-17 | Richo Seiki Kk | ガス検出装置 |
| JPS59188549A (ja) * | 1983-04-11 | 1984-10-25 | Shinkosumosu Denki Kk | 2端子形半導体ガス検知素子 |
| US4916935A (en) * | 1983-11-09 | 1990-04-17 | Bacharach, Inc. | Low power solid state gas sensor with linear output and method of making the same |
| US4541988A (en) * | 1983-12-13 | 1985-09-17 | Bacharach Instrument Company | Constant temperature catalytic gas detection instrument |
| US4587105A (en) * | 1984-05-17 | 1986-05-06 | Honeywell Inc. | Integratable oxygen sensor |
| EP0265834B1 (en) * | 1986-10-28 | 1992-07-22 | Figaro Engineering Inc. | Sensor and method of producing same |
| US5128514A (en) * | 1987-07-31 | 1992-07-07 | Siemens Aktiengesellschaft | Black radiator for use as an emitter in calibratable gas sensors |
| JP2542643B2 (ja) * | 1987-10-31 | 1996-10-09 | 株式会社東芝 | センサの製造方法 |
| JPH01284747A (ja) * | 1988-05-10 | 1989-11-16 | Ricoh Co Ltd | ガスセンサ |
| JP2679811B2 (ja) * | 1988-07-06 | 1997-11-19 | 株式会社リコー | ガス検出装置 |
| DE3818052A1 (de) * | 1988-05-27 | 1989-12-07 | Geraetebau Gmbh | Atemschutzmaske |
| FI82774C (fi) * | 1988-06-08 | 1991-04-10 | Vaisala Oy | Integrerad uppvaermbar sensor. |
| US4953387A (en) * | 1989-07-31 | 1990-09-04 | The Regents Of The University Of Michigan | Ultrathin-film gas detector |
| WO1991006001A1 (de) * | 1989-10-17 | 1991-05-02 | E.T.R. Elektronik Technologie Rump Gmbh | Gas-sensor-anordnung |
| DE4105025C1 (enExample) * | 1991-02-19 | 1992-07-02 | Robert Bosch Gmbh, 7000 Stuttgart, De | |
| US5994144A (en) * | 1992-03-04 | 1999-11-30 | Fujitsu Limited | Simplified environmental atmosphere measuring method |
| US5382341A (en) * | 1992-09-10 | 1995-01-17 | Aroutiounian; Vladimir M. | Method of making smoke detector |
| GB2274336B (en) * | 1993-01-13 | 1997-04-30 | British Gas Plc | Gas sensors |
| US5466605A (en) * | 1993-03-15 | 1995-11-14 | Arizona Board Of Regents | Method for detection of chemical components |
| FI101911B (fi) * | 1993-04-07 | 1998-09-15 | Valtion Teknillinen | Sähköisesti moduloitava terminen säteilylähde ja menetelmä sen valmist amiseksi |
| EP0646791B1 (en) * | 1993-09-30 | 2001-09-05 | Nittan Company, Limited | Sensor device, and electronic equipment each having sensor device incorporated therein |
| WO1996019724A1 (en) * | 1994-12-22 | 1996-06-27 | Senova Corporation | Apparatus for detecting selected chemical components of fluid streams |
| US5985673A (en) * | 1994-12-22 | 1999-11-16 | Arizona Baord Of Regents | Method for regeneration of a sensor |
| DE19547150C2 (de) * | 1995-12-16 | 2000-08-03 | Draegerwerk Ag | Gassensor |
| DE19606272C2 (de) * | 1996-02-21 | 2001-05-17 | Ust Umweltsensortechnik Gmbh | Halbleiter-Gassensor |
| US6596236B2 (en) * | 1999-01-15 | 2003-07-22 | Advanced Technology Materials, Inc. | Micro-machined thin film sensor arrays for the detection of H2 containing gases, and method of making and using the same |
| EP1165187A1 (de) * | 1999-03-17 | 2002-01-02 | T.E.M.! Technische Entwicklungen und Management GmbH | Sensorvorrichtung und verfahren zur detektion von in luft enthaltenen gasen oder dämpfen |
| US7080545B2 (en) * | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
| US20040163445A1 (en) * | 2002-10-17 | 2004-08-26 | Dimeo Frank | Apparatus and process for sensing fluoro species in semiconductor processing systems |
| ITTO20030318A1 (it) * | 2003-04-24 | 2004-10-25 | Sacmi | Dispositivo sensore di gas a film sottile semiconduttore. |
| US20060211253A1 (en) * | 2005-03-16 | 2006-09-21 | Ing-Shin Chen | Method and apparatus for monitoring plasma conditions in an etching plasma processing facility |
| US7827852B2 (en) * | 2007-12-20 | 2010-11-09 | General Electric Company | Gas sensor and method of making |
| EP3096585B1 (de) * | 2015-05-18 | 2017-12-20 | E.G.O. ELEKTRO-GERÄTEBAU GmbH | Heizeinrichtung zum erhitzen von fluiden und verfahren zum betrieb einer solchen heizeinrichtung |
| DE102016003283B4 (de) | 2016-03-18 | 2022-05-19 | Dräger Safety AG & Co. KGaA | Gasmessvorrichtung mit einer Prüfvorrichtung zur Überprüfung eines Gassensors |
| DE102016003284B4 (de) | 2016-03-18 | 2022-05-19 | Dräger Safety AG & Co. KGaA | Gasmessvorrichtung mit einer Prüfvorrichtung zur Überprüfung eines Gassensors |
| US11275051B2 (en) | 2016-03-23 | 2022-03-15 | Vaon, Llc | Metal oxide-based chemical sensors |
| US10132769B2 (en) | 2016-07-13 | 2018-11-20 | Vaon, Llc | Doped, metal oxide-based chemical sensors |
| US11243192B2 (en) | 2016-09-27 | 2022-02-08 | Vaon, Llc | 3-D glass printable hand-held gas chromatograph for biomedical and environmental applications |
| US11203183B2 (en) | 2016-09-27 | 2021-12-21 | Vaon, Llc | Single and multi-layer, flat glass-sensor structures |
| WO2018160650A1 (en) | 2017-02-28 | 2018-09-07 | Vaon, Llc | Bimetal doped-metal oxide-based chemical sensors |
| EP3715842B1 (en) * | 2019-03-26 | 2021-05-19 | Infineon Technologies AG | Mems gas sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2331016A1 (fr) * | 1975-11-08 | 1977-06-03 | Matsushita Electric Industrial Co Ltd | Detecteurs de gaz reducteur renfermant de l'oxyde ferrique gamma et au moins un autre oxyde metallique |
| FR2377035A1 (fr) * | 1977-01-10 | 1978-08-04 | British Steel Corp | Detecteur de gaz du type a semi-conducteur chauffe |
| GB2003273A (en) * | 1977-07-18 | 1979-03-07 | Fuji Electric Co Ltd | Carbon monoxide detecting device |
| FR2400705A1 (fr) * | 1977-08-19 | 1979-03-16 | Licentia Gmbh | Element detecteur de gaz |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3865550A (en) * | 1970-08-26 | 1975-02-11 | Nat Res Dev | Semi-conducting gas sensitive devices |
| US3751968A (en) * | 1971-01-22 | 1973-08-14 | Inficon Inc | Solid state sensor |
| US3901067A (en) * | 1973-06-21 | 1975-08-26 | Gen Monitors | Semiconductor gas detector and method therefor |
| US4045178A (en) * | 1975-11-08 | 1977-08-30 | Matsushita Electric Industrial Co., Ltd. | Reducing gas sensor |
| JPS5421397A (en) * | 1977-07-18 | 1979-02-17 | Fuji Electric Co Ltd | Carbon monoxide detector |
| DE2735222A1 (de) | 1977-08-04 | 1979-02-15 | Siemens Ag | Verfahren und vorrichtung zur messung des aethylalkoholgehaltes von luft |
| JPS5473097A (en) * | 1977-11-22 | 1979-06-12 | Seiko Epson Corp | Gas sensor |
| DE2933971C2 (de) | 1979-08-22 | 1983-12-15 | Siemens AG, 1000 Berlin und 8000 München | Gassensor hoher Empfindlichkeit und Stabilität zum Nachweis und zur Messung des Verunreinigungsgehaltes von Luft auf der Basis von Metalloxidhalbleitern |
-
1980
- 1980-05-21 DE DE3019387A patent/DE3019387C2/de not_active Expired
-
1981
- 1981-04-16 US US06/254,855 patent/US4338281A/en not_active Expired - Fee Related
- 1981-04-28 FR FR8108444A patent/FR2484646A1/fr active Granted
- 1981-05-19 JP JP7560881A patent/JPS5717849A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2331016A1 (fr) * | 1975-11-08 | 1977-06-03 | Matsushita Electric Industrial Co Ltd | Detecteurs de gaz reducteur renfermant de l'oxyde ferrique gamma et au moins un autre oxyde metallique |
| FR2377035A1 (fr) * | 1977-01-10 | 1978-08-04 | British Steel Corp | Detecteur de gaz du type a semi-conducteur chauffe |
| GB2003273A (en) * | 1977-07-18 | 1979-03-07 | Fuji Electric Co Ltd | Carbon monoxide detecting device |
| FR2400705A1 (fr) * | 1977-08-19 | 1979-03-16 | Licentia Gmbh | Element detecteur de gaz |
Also Published As
| Publication number | Publication date |
|---|---|
| US4338281A (en) | 1982-07-06 |
| DE3019387C2 (de) | 1986-01-23 |
| FR2484646B1 (enExample) | 1985-02-08 |
| JPS5717849A (en) | 1982-01-29 |
| DE3019387A1 (de) | 1981-11-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |