FR2463977A1 - Croisement par dessous pour des circuits integres cmos/sos a densite elevee - Google Patents

Croisement par dessous pour des circuits integres cmos/sos a densite elevee Download PDF

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Publication number
FR2463977A1
FR2463977A1 FR8018154A FR8018154A FR2463977A1 FR 2463977 A1 FR2463977 A1 FR 2463977A1 FR 8018154 A FR8018154 A FR 8018154A FR 8018154 A FR8018154 A FR 8018154A FR 2463977 A1 FR2463977 A1 FR 2463977A1
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FR
France
Prior art keywords
type
layer
regions
crossing
universal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8018154A
Other languages
English (en)
French (fr)
Other versions
FR2463977B1 (enExample
Inventor
Andrew Gordon Francis Dingwall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2463977A1 publication Critical patent/FR2463977A1/fr
Application granted granted Critical
Publication of FR2463977B1 publication Critical patent/FR2463977B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR8018154A 1979-08-20 1980-08-19 Croisement par dessous pour des circuits integres cmos/sos a densite elevee Granted FR2463977A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6814879A 1979-08-20 1979-08-20

Publications (2)

Publication Number Publication Date
FR2463977A1 true FR2463977A1 (fr) 1981-02-27
FR2463977B1 FR2463977B1 (enExample) 1983-02-04

Family

ID=22080712

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8018154A Granted FR2463977A1 (fr) 1979-08-20 1980-08-19 Croisement par dessous pour des circuits integres cmos/sos a densite elevee

Country Status (5)

Country Link
JP (1) JPS5632770A (enExample)
DE (1) DE3030753A1 (enExample)
FR (1) FR2463977A1 (enExample)
GB (1) GB2056771B (enExample)
IT (1) IT1131790B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138950A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Integrierter halbleiterspeicher
JPS61127174A (ja) * 1984-11-26 1986-06-14 Toshiba Corp 半導体装置の製造方法
DE19604776A1 (de) * 1996-02-09 1997-08-14 Siemens Ag Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
FR2268361A1 (enExample) * 1974-04-19 1975-11-14 Rca Corp
DE2531927A1 (de) * 1974-07-23 1976-02-05 Rca Corp Polykristallines silizium-widerstandselement fuer integrierte schaltungen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139388A (en) * 1976-05-17 1977-11-21 Matsushita Electric Ind Co Ltd Mos type semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
FR2268361A1 (enExample) * 1974-04-19 1975-11-14 Rca Corp
DE2531927A1 (de) * 1974-07-23 1976-02-05 Rca Corp Polykristallines silizium-widerstandselement fuer integrierte schaltungen

Also Published As

Publication number Publication date
GB2056771A (en) 1981-03-18
IT1131790B (it) 1986-06-25
JPS5632770A (en) 1981-04-02
FR2463977B1 (enExample) 1983-02-04
GB2056771B (en) 1983-10-19
IT8023809A0 (it) 1980-07-30
DE3030753A1 (de) 1981-03-12
JPH0478011B2 (enExample) 1992-12-10

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Legal Events

Date Code Title Description
ST Notification of lapse