IT1131790B - Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita' - Google Patents
Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita'Info
- Publication number
- IT1131790B IT1131790B IT23809/80A IT2380980A IT1131790B IT 1131790 B IT1131790 B IT 1131790B IT 23809/80 A IT23809/80 A IT 23809/80A IT 2380980 A IT2380980 A IT 2380980A IT 1131790 B IT1131790 B IT 1131790B
- Authority
- IT
- Italy
- Prior art keywords
- high density
- integrated circuits
- internal connection
- universal internal
- connection complex
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6814879A | 1979-08-20 | 1979-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8023809A0 IT8023809A0 (it) | 1980-07-30 |
| IT1131790B true IT1131790B (it) | 1986-06-25 |
Family
ID=22080712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT23809/80A IT1131790B (it) | 1979-08-20 | 1980-07-30 | Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita' |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5632770A (enExample) |
| DE (1) | DE3030753A1 (enExample) |
| FR (1) | FR2463977A1 (enExample) |
| GB (1) | GB2056771B (enExample) |
| IT (1) | IT1131790B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3138950A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierter halbleiterspeicher |
| JPS61127174A (ja) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | 半導体装置の製造方法 |
| DE19604776A1 (de) * | 1996-02-09 | 1997-08-14 | Siemens Ag | Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443176A (en) * | 1966-03-31 | 1969-05-06 | Ibm | Low resistivity semiconductor underpass connector and fabrication method therefor |
| US3958266A (en) * | 1974-04-19 | 1976-05-18 | Rca Corporation | Deep depletion insulated gate field effect transistors |
| CA1040321A (en) * | 1974-07-23 | 1978-10-10 | Alfred C. Ipri | Polycrystalline silicon resistive device for integrated circuits and method for making same |
| JPS52139388A (en) * | 1976-05-17 | 1977-11-21 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device |
-
1980
- 1980-07-30 IT IT23809/80A patent/IT1131790B/it active
- 1980-08-06 GB GB8025630A patent/GB2056771B/en not_active Expired
- 1980-08-14 JP JP11227380A patent/JPS5632770A/ja active Granted
- 1980-08-14 DE DE19803030753 patent/DE3030753A1/de not_active Withdrawn
- 1980-08-19 FR FR8018154A patent/FR2463977A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2056771A (en) | 1981-03-18 |
| JPS5632770A (en) | 1981-04-02 |
| FR2463977B1 (enExample) | 1983-02-04 |
| GB2056771B (en) | 1983-10-19 |
| IT8023809A0 (it) | 1980-07-30 |
| DE3030753A1 (de) | 1981-03-12 |
| JPH0478011B2 (enExample) | 1992-12-10 |
| FR2463977A1 (fr) | 1981-02-27 |
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