IT1170118B - Circuito darlington monoliticamente integrato - Google Patents

Circuito darlington monoliticamente integrato

Info

Publication number
IT1170118B
IT1170118B IT20112/83A IT2011283A IT1170118B IT 1170118 B IT1170118 B IT 1170118B IT 20112/83 A IT20112/83 A IT 20112/83A IT 2011283 A IT2011283 A IT 2011283A IT 1170118 B IT1170118 B IT 1170118B
Authority
IT
Italy
Prior art keywords
monolithically integrated
darlington circuit
integrated darlington
circuit
monolithically
Prior art date
Application number
IT20112/83A
Other languages
English (en)
Other versions
IT8320112A1 (it
IT8320112A0 (it
Inventor
Hartmut Michel
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IT8320112A0 publication Critical patent/IT8320112A0/it
Publication of IT8320112A1 publication Critical patent/IT8320112A1/it
Application granted granted Critical
Publication of IT1170118B publication Critical patent/IT1170118B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
IT20112/83A 1982-03-20 1983-03-17 Circuito darlington monoliticamente integrato IT1170118B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823210353 DE3210353A1 (de) 1982-03-20 1982-03-20 Monolithisch integrierte darlingtonschaltung

Publications (3)

Publication Number Publication Date
IT8320112A0 IT8320112A0 (it) 1983-03-17
IT8320112A1 IT8320112A1 (it) 1984-09-17
IT1170118B true IT1170118B (it) 1987-06-03

Family

ID=6158893

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20112/83A IT1170118B (it) 1982-03-20 1983-03-17 Circuito darlington monoliticamente integrato

Country Status (4)

Country Link
EP (1) EP0089527A3 (it)
JP (1) JPS58184762A (it)
DE (1) DE3210353A1 (it)
IT (1) IT1170118B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2524710B1 (fr) * 1982-04-01 1986-03-14 Gen Electric Dispositif de commutation a semi-conducteur
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
DE3431676A1 (de) * 1984-08-29 1986-03-13 Robert Bosch Gmbh, 7000 Stuttgart Integrierte leistungsendstufe
DE3435571A1 (de) * 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte bipolare darlington-schaltung
EP0176753A1 (de) * 1984-09-27 1986-04-09 Siemens Aktiengesellschaft Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945273A1 (de) * 1979-11-09 1981-05-21 Robert Bosch Gmbh, 7000 Stuttgart Darligton-transistorschaltung
SE456291B (sv) * 1980-02-22 1988-09-19 Rca Corp Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen

Also Published As

Publication number Publication date
EP0089527A3 (de) 1985-07-03
JPS58184762A (ja) 1983-10-28
DE3210353A1 (de) 1983-09-22
IT8320112A1 (it) 1984-09-17
IT8320112A0 (it) 1983-03-17
EP0089527A2 (de) 1983-09-28

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