IT1148857B - Dispositivo ad accoppiamento di cariche perfezionato - Google Patents
Dispositivo ad accoppiamento di cariche perfezionatoInfo
- Publication number
- IT1148857B IT1148857B IT20722/80A IT2072280A IT1148857B IT 1148857 B IT1148857 B IT 1148857B IT 20722/80 A IT20722/80 A IT 20722/80A IT 2072280 A IT2072280 A IT 2072280A IT 1148857 B IT1148857 B IT 1148857B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- coupling device
- charge coupling
- charge
- perfected charge
- Prior art date
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/041,975 US4234887A (en) | 1979-05-24 | 1979-05-24 | V-Groove charge-coupled device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8020722A0 IT8020722A0 (it) | 1980-03-18 |
| IT1148857B true IT1148857B (it) | 1986-12-03 |
Family
ID=21919364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20722/80A IT1148857B (it) | 1979-05-24 | 1980-03-18 | Dispositivo ad accoppiamento di cariche perfezionato |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4234887A (it) |
| EP (1) | EP0019722B1 (it) |
| JP (1) | JPS55157263A (it) |
| CA (1) | CA1130458A (it) |
| DE (1) | DE3060518D1 (it) |
| IT (1) | IT1148857B (it) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4393391A (en) * | 1980-06-16 | 1983-07-12 | Supertex, Inc. | Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
| JPS59133865A (ja) * | 1983-01-19 | 1984-08-01 | Honda Motor Co Ltd | 車両用自動変速装置 |
| US4876586A (en) * | 1987-12-21 | 1989-10-24 | Sangamo-Weston, Incorporated | Grooved Schottky barrier photodiode for infrared sensing |
| US4926225A (en) * | 1988-06-29 | 1990-05-15 | Texas Instruments Incorporated | High performance extended wavelength imager and method of use |
| JP2517375B2 (ja) * | 1988-12-19 | 1996-07-24 | 三菱電機株式会社 | 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法 |
| US5173756A (en) * | 1990-01-05 | 1992-12-22 | International Business Machines Corporation | Trench charge-coupled device |
| JP2825004B2 (ja) * | 1991-02-08 | 1998-11-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 側壁電荷結合撮像素子及びその製造方法 |
| US6218701B1 (en) * | 1999-04-30 | 2001-04-17 | Intersil Corporation | Power MOS device with increased channel width and process for forming same |
| US6445029B1 (en) | 2000-10-24 | 2002-09-03 | International Business Machines Corporation | NVRAM array device with enhanced write and erase |
| US20040036131A1 (en) * | 2002-08-23 | 2004-02-26 | Micron Technology, Inc. | Electrostatic discharge protection devices having transistors with textured surfaces |
| US8430863B2 (en) * | 2005-12-02 | 2013-04-30 | Abbott Cardiovascular Systems Inc. | Visualization of a catheter viewed under ultrasound imaging |
| US7867169B2 (en) * | 2005-12-02 | 2011-01-11 | Abbott Cardiovascular Systems Inc. | Echogenic needle catheter configured to produce an improved ultrasound image |
| US7794402B2 (en) * | 2006-05-15 | 2010-09-14 | Advanced Cardiovascular Systems, Inc. | Echogenic needle catheter configured to produce an improved ultrasound image |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132457B2 (it) * | 1971-08-19 | 1976-09-13 | ||
| NL7401939A (nl) * | 1974-02-13 | 1975-08-15 | Philips Nv | Ladingsgekoppelde inrichting. |
| US4070690A (en) * | 1976-08-17 | 1978-01-24 | Westinghouse Electric Corporation | VMOS transistor |
| DE2642615C2 (de) * | 1976-09-22 | 1986-04-24 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
-
1979
- 1979-05-24 US US06/041,975 patent/US4234887A/en not_active Expired - Lifetime
-
1980
- 1980-02-05 JP JP1214280A patent/JPS55157263A/ja active Pending
- 1980-03-18 IT IT20722/80A patent/IT1148857B/it active
- 1980-03-21 CA CA348,143A patent/CA1130458A/en not_active Expired
- 1980-04-25 EP EP80102240A patent/EP0019722B1/de not_active Expired
- 1980-04-25 DE DE8080102240T patent/DE3060518D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4234887A (en) | 1980-11-18 |
| DE3060518D1 (en) | 1982-07-29 |
| CA1130458A (en) | 1982-08-24 |
| IT8020722A0 (it) | 1980-03-18 |
| JPS55157263A (en) | 1980-12-06 |
| EP0019722A1 (de) | 1980-12-10 |
| EP0019722B1 (de) | 1982-06-09 |
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