FR2454672A1 - Memoire fixe programmable par laser - Google Patents

Memoire fixe programmable par laser

Info

Publication number
FR2454672A1
FR2454672A1 FR8008376A FR8008376A FR2454672A1 FR 2454672 A1 FR2454672 A1 FR 2454672A1 FR 8008376 A FR8008376 A FR 8008376A FR 8008376 A FR8008376 A FR 8008376A FR 2454672 A1 FR2454672 A1 FR 2454672A1
Authority
FR
France
Prior art keywords
memory
laser
fixed memory
memory programmable
memory transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8008376A
Other languages
English (en)
Other versions
FR2454672B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2454672A1 publication Critical patent/FR2454672A1/fr
Application granted granted Critical
Publication of FR2454672B1 publication Critical patent/FR2454672B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

UN TRANSISTOR DE MEMOIRE ETANT PLACE A CHAQUE INTERSECTION DE LIGNES D'ADRESSES ET DE MOTS, CHAQUE TRANSISTOR DE MEMOIRE REPRESENTE UN EMPLACEMENT DE BIT ET COMPREND UNE LIAISON CONDUCTRICE, POUVANT ETRE ROMPUE, MONTEE EN SERIE ET PLACEE SUR LE DESSUS D'UNE ZONE D'OXYDE ENTOURANT LES TRANSISTORS DE MEMOIRE. LA MEMOIRE EST PROGRAMMEE A VOLONTE APRES LA FABRICATION DES CIRCUITS, AU COURS DE L'OPERATION DE TRI DES GALETTES SUR MATRICES, EN SECTIONNANT DES LIAISONS CHOISIES A L'AIDE D'UN FAISCEAU LASER. LA MEMOIRE COMPREND AUSSI UN CIRCUIT EXTERIEUR DE SIMULATION DES PROGRAMMES QUI PERMET DE FORMER EXTERIEUREMENT UN MOT NUMERIQUE PARTICULIER POUR SIMULER LE CONTENU DE LA MEMOIRE AVANT LA PROGRAMMATION.
FR8008376A 1979-04-19 1980-04-15 Memoire fixe programmable par laser Expired FR2454672B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/031,562 US4238839A (en) 1979-04-19 1979-04-19 Laser programmable read only memory

Publications (2)

Publication Number Publication Date
FR2454672A1 true FR2454672A1 (fr) 1980-11-14
FR2454672B1 FR2454672B1 (fr) 1986-05-30

Family

ID=21860143

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8008376A Expired FR2454672B1 (fr) 1979-04-19 1980-04-15 Memoire fixe programmable par laser

Country Status (5)

Country Link
US (1) US4238839A (fr)
JP (1) JPS55160464A (fr)
DE (1) DE3015096A1 (fr)
FR (1) FR2454672B1 (fr)
GB (1) GB2047963B (fr)

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US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
US4396998A (en) * 1980-08-27 1983-08-02 Mobay Chemical Corporation Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor
JPS5856355A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 半導体集積回路装置
DE3276981D1 (en) * 1981-10-09 1987-09-17 Toshiba Kk Semiconductor device having a fuse element
JPS58169940A (ja) * 1982-03-30 1983-10-06 Fujitsu Ltd 半導体装置の製造方法
US4578751A (en) * 1982-06-25 1986-03-25 At&T Technologies, Inc. System for simultaneously programming a number of EPROMs
US4583201A (en) * 1983-09-08 1986-04-15 International Business Machines Corporation Resistor personalized memory device using a resistive gate fet
US5008729A (en) * 1984-06-18 1991-04-16 Texas Instruments Incorporated Laser programming of semiconductor devices using diode make-link structure
IL86162A (en) * 1988-04-25 1991-11-21 Zvi Orbach Customizable semiconductor devices
US5545904A (en) * 1986-01-17 1996-08-13 Quick Technologies Ltd. Personalizable gate array devices
US5679967A (en) * 1985-01-20 1997-10-21 Chip Express (Israel) Ltd. Customizable three metal layer gate array devices
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JPS62139198A (ja) * 1985-12-11 1987-06-22 Mitsubishi Electric Corp 半導体記憶装置
IL78730A (en) * 1986-05-08 1990-03-19 Avner Pdahtzur Protective optical coating and method for use thereof
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
US4760249A (en) * 1986-12-22 1988-07-26 Motorola, Inc. Logic array having multiple optical logic inputs
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
GB2206730A (en) * 1987-05-19 1989-01-11 Gazelle Microcircuits Inc Semiconductor circuit device parameter optimization
US4872140A (en) * 1987-05-19 1989-10-03 Gazelle Microcircuits, Inc. Laser programmable memory array
US5281553A (en) * 1987-07-02 1994-01-25 Bull, S.A. Method for controlling the state of conduction of an MOS transistor of an integrated circuit
JPH0691223B2 (ja) * 1987-07-06 1994-11-14 三菱電機株式会社 Ｒｏｍ装置及びその形成方法
DE3731621A1 (de) * 1987-09-19 1989-03-30 Texas Instruments Deutschland Verfahren zum herstellen einer elektrisch programmierbaren integrierten schaltung
EP0405849A3 (en) * 1989-06-30 1991-05-02 American Telephone And Telegraph Company Severable conductive path in an integrated-circuit device
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5166556A (en) * 1991-01-22 1992-11-24 Myson Technology, Inc. Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits
US5374590A (en) * 1993-04-28 1994-12-20 International Business Machines Corporation Fabrication and laser deletion of microfuses
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5572409A (en) * 1994-02-08 1996-11-05 Prolinx Labs Corporation Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board
US5726482A (en) * 1994-02-08 1998-03-10 Prolinx Labs Corporation Device-under-test card for a burn-in board
US5813881A (en) * 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
US5537108A (en) * 1994-02-08 1996-07-16 Prolinx Labs Corporation Method and structure for programming fuses
US5917229A (en) * 1994-02-08 1999-06-29 Prolinx Labs Corporation Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect
US5808351A (en) * 1994-02-08 1998-09-15 Prolinx Labs Corporation Programmable/reprogramable structure using fuses and antifuses
US5606242A (en) * 1994-10-04 1997-02-25 Duracell, Inc. Smart battery algorithm for reporting battery parameters to an external device
US5633573A (en) * 1994-11-10 1997-05-27 Duracell, Inc. Battery pack having a processor controlled battery operating system
US5962815A (en) * 1995-01-18 1999-10-05 Prolinx Labs Corporation Antifuse interconnect between two conducting layers of a printed circuit board
US5906042A (en) * 1995-10-04 1999-05-25 Prolinx Labs Corporation Method and structure to interconnect traces of two conductive layers in a printed circuit board
US5767575A (en) * 1995-10-17 1998-06-16 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
EP0780851B1 (fr) * 1995-12-20 2003-06-11 International Business Machines Corporation Circuit intégré semiconducteur avec des structures de résistance ajustables électriquement
US5872338A (en) * 1996-04-10 1999-02-16 Prolinx Labs Corporation Multilayer board having insulating isolation rings
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US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6025695A (en) * 1997-07-09 2000-02-15 Friel; Daniel D. Battery operating system
US9092595B2 (en) 1997-10-08 2015-07-28 Pact Xpp Technologies Ag Multiprocessor having associated RAM units
US6034427A (en) * 1998-01-28 2000-03-07 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US6346427B1 (en) 1999-08-18 2002-02-12 Utmc Microelectronic Systems Inc. Parameter adjustment in a MOS integrated circuit
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US7026692B1 (en) * 2003-11-12 2006-04-11 Xilinx, Inc. Low voltage non-volatile memory transistor
JP4685388B2 (ja) * 2004-09-06 2011-05-18 Ｏｋｉセミコンダクタ株式会社 半導体装置
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US7834659B1 (en) 2008-03-05 2010-11-16 Xilinx, Inc. Multi-step programming of E fuse cells
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US7923811B1 (en) 2008-03-06 2011-04-12 Xilinx, Inc. Electronic fuse cell with enhanced thermal gradient
US8564023B2 (en) * 2008-03-06 2013-10-22 Xilinx, Inc. Integrated circuit with MOSFET fuse element
US20150317255A1 (en) * 2011-02-15 2015-11-05 Chengdu Haicun Ip Technology Llc Secure Printed Memory

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2019864A1 (fr) * 1968-10-03 1970-07-10 North American Rockwell
US3529299A (en) * 1966-10-21 1970-09-15 Texas Instruments Inc Programmable high-speed read-only memory devices
US3611319A (en) * 1969-03-06 1971-10-05 Teledyne Inc Electrically alterable read only memory
FR2168368A1 (fr) * 1972-01-19 1973-08-31 Intel Corp
FR2289999A2 (fr) * 1974-10-31 1976-05-28 Radiotechnique Compelec Memoire morte programmable
DE2545047B2 (de) * 1975-10-08 1978-01-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung eines halbleiterfestwertspeichers

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US4125880A (en) * 1977-03-09 1978-11-14 Harris Corporation Simplified output circuit for read only memories

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Publication number Priority date Publication date Assignee Title
US3529299A (en) * 1966-10-21 1970-09-15 Texas Instruments Inc Programmable high-speed read-only memory devices
FR2019864A1 (fr) * 1968-10-03 1970-07-10 North American Rockwell
GB1225086A (fr) * 1968-10-03 1971-03-17
US3611319A (en) * 1969-03-06 1971-10-05 Teledyne Inc Electrically alterable read only memory
FR2168368A1 (fr) * 1972-01-19 1973-08-31 Intel Corp
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FR2289999A2 (fr) * 1974-10-31 1976-05-28 Radiotechnique Compelec Memoire morte programmable
DE2545047B2 (de) * 1975-10-08 1978-01-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung eines halbleiterfestwertspeichers

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Also Published As

Publication number Publication date
DE3015096A1 (de) 1980-11-06
DE3015096C2 (fr) 1991-08-08
JPS6359261B2 (fr) 1988-11-18
GB2047963A (en) 1980-12-03
US4238839A (en) 1980-12-09
GB2047963B (en) 1983-11-09
JPS55160464A (en) 1980-12-13
FR2454672B1 (fr) 1986-05-30

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