ATE38579T1 - Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers. - Google Patents

Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers.

Info

Publication number
ATE38579T1
ATE38579T1 AT83100647T AT83100647T ATE38579T1 AT E38579 T1 ATE38579 T1 AT E38579T1 AT 83100647 T AT83100647 T AT 83100647T AT 83100647 T AT83100647 T AT 83100647T AT E38579 T1 ATE38579 T1 AT E38579T1
Authority
AT
Austria
Prior art keywords
word
memory
volatile memory
reprogrammable non
electrically reprogrammable
Prior art date
Application number
AT83100647T
Other languages
English (en)
Inventor
Hartmut Dr Dipl-Phys Schrenk
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of ATE38579T1 publication Critical patent/ATE38579T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
  • Circuits Of Receivers In General (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT83100647T 1982-02-16 1983-01-25 Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers. ATE38579T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19823205476 DE3205476A1 (de) 1982-02-16 1982-02-16 Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers
EP83100647A EP0086360B1 (de) 1982-02-16 1983-01-25 Wortweise elektrisch umprogrammierbarer nichtflüchtiger Speicher sowie Verwendung eines solchen Speichers

Publications (1)

Publication Number Publication Date
ATE38579T1 true ATE38579T1 (de) 1988-11-15

Family

ID=6155847

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83100647T ATE38579T1 (de) 1982-02-16 1983-01-25 Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers.

Country Status (5)

Country Link
US (1) US4835742A (de)
EP (1) EP0086360B1 (de)
JP (1) JPS58150191A (de)
AT (1) ATE38579T1 (de)
DE (2) DE3205476A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2599176A1 (fr) * 1986-05-23 1987-11-27 Eurotechnique Sa Memoire morte programmable electriquement
US5138575A (en) * 1988-12-19 1992-08-11 Fujitsu Limited Electricaly erasable and programmable read only memory with a discharge device
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
EP0715312B1 (de) * 1994-11-30 2002-10-23 STMicroelectronics S.r.l. Monolithischer integrierter Generator von verschiedenen Speisespannungswerten
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
EP0906623B1 (de) * 1996-06-20 2001-01-03 STMicroelectronics S.r.l. Vielfachniveau-speicherschaltung mit gesteuerter schreibespannung
JP2006066009A (ja) * 2004-08-30 2006-03-09 Renesas Technology Corp 半導体集積回路
WO2006025091A1 (ja) * 2004-08-30 2006-03-09 Renesas Technology Corp. 半導体集積回路
US7292473B2 (en) * 2005-09-07 2007-11-06 Freescale Semiconductor, Inc. Method and apparatus for programming/erasing a non-volatile memory
JP2010055748A (ja) * 2009-12-09 2010-03-11 Renesas Technology Corp データ記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1494732A (en) * 1973-12-14 1977-12-14 Smiths Industries Ltd Odometers
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)

Also Published As

Publication number Publication date
EP0086360A2 (de) 1983-08-24
EP0086360B1 (de) 1988-11-09
EP0086360A3 (en) 1986-03-12
US4835742A (en) 1989-05-30
DE3205476A1 (de) 1983-08-25
JPS58150191A (ja) 1983-09-06
DE3378438D1 (en) 1988-12-15

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