DE3787625D1 - Hochdichter festwertspeicher in einem cmos-gatterfeld. - Google Patents

Hochdichter festwertspeicher in einem cmos-gatterfeld.

Info

Publication number
DE3787625D1
DE3787625D1 DE87402792T DE3787625T DE3787625D1 DE 3787625 D1 DE3787625 D1 DE 3787625D1 DE 87402792 T DE87402792 T DE 87402792T DE 3787625 T DE3787625 T DE 3787625T DE 3787625 D1 DE3787625 D1 DE 3787625D1
Authority
DE
Germany
Prior art keywords
high density
fixed value
value storage
gate field
cmos gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87402792T
Other languages
English (en)
Other versions
DE3787625T2 (de
Inventor
Emdadur R Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE3787625D1 publication Critical patent/DE3787625D1/de
Application granted granted Critical
Publication of DE3787625T2 publication Critical patent/DE3787625T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE87402792T 1986-12-11 1987-12-09 Hochdichter Festwertspeicher in einem CMOS-Gatterfeld. Expired - Fee Related DE3787625T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/940,363 US4899308A (en) 1986-12-11 1986-12-11 High density ROM in a CMOS gate array

Publications (2)

Publication Number Publication Date
DE3787625D1 true DE3787625D1 (de) 1993-11-04
DE3787625T2 DE3787625T2 (de) 1994-04-28

Family

ID=25474696

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87402792T Expired - Fee Related DE3787625T2 (de) 1986-12-11 1987-12-09 Hochdichter Festwertspeicher in einem CMOS-Gatterfeld.

Country Status (6)

Country Link
US (1) US4899308A (de)
EP (1) EP0271412B1 (de)
JP (1) JPS63160358A (de)
KR (1) KR880008340A (de)
CA (1) CA1307049C (de)
DE (1) DE3787625T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175704A (en) * 1987-07-29 1992-12-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
NL8902820A (nl) * 1989-11-15 1991-06-03 Philips Nv Geintegreerde halfgeleiderschakeling van het master slice type.
JP2501930B2 (ja) * 1990-02-26 1996-05-29 株式会社東芝 半導体集積回路
US5289406A (en) * 1990-08-28 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Read only memory for storing multi-data
US5420818A (en) * 1994-01-03 1995-05-30 Texas Instruments Incorporated Static read only memory (ROM)
US5532619A (en) * 1994-12-15 1996-07-02 International Business Machines Corporation Precision level shifter w/current mirror
JPH09120693A (ja) * 1995-08-22 1997-05-06 Mitsubishi Electric Corp 半導体記憶装置
US5657277A (en) * 1996-04-23 1997-08-12 Micron Technology, Inc. Memory device tracking circuit
US5870326A (en) * 1997-08-12 1999-02-09 Intel Corporation Information encoding by multiple line selection
KR100332756B1 (ko) * 1998-01-12 2002-11-13 엘지전자주식회사 스터링쿨러를이용한냉온장고
JP3344563B2 (ja) 1998-10-30 2002-11-11 シャープ株式会社 半導体装置
US6553552B1 (en) 2000-01-27 2003-04-22 National Semiconductor Corporation Method of designing an integrated circuit memory architecture
KR100416599B1 (ko) * 2001-05-31 2004-02-05 삼성전자주식회사 집적도와 독출동작 속도를 향상시키고 전력소모를감소시킬 수 있는 메탈 프로그래머블 롬의 메모리셀 구조
US8116153B2 (en) * 2009-02-17 2012-02-14 Freescale Semiconductor, Inc. Read only memory and method of reading same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1560661A (en) * 1975-06-05 1980-02-06 Tokyo Shibaura Electric Co Matrix circuits
US4274147A (en) * 1979-09-04 1981-06-16 Rockwell International Corporation Static read only memory
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
JPS57172592A (en) * 1981-04-17 1982-10-23 Toshiba Corp Nonvolatile semiconductor storage device
CA1204171A (en) * 1983-07-15 1986-05-06 Stephen K. Sunter Programmable logic array
JPH0666115B2 (ja) * 1983-09-26 1994-08-24 株式会社東芝 半導体記憶装置
JPH0658760B2 (ja) * 1985-03-12 1994-08-03 松下電子工業株式会社 半導体集積回路
CA1233565A (en) * 1985-05-28 1988-03-01 Robert A. Penchuk Dynamic mos memory reference voltage generator
JPH0783062B2 (ja) * 1985-06-18 1995-09-06 株式会社東芝 マスタ−スライス型半導体装置
US4740721A (en) * 1985-10-21 1988-04-26 Western Digital Corporation Programmable logic array with single clock dynamic logic
US4779010A (en) * 1986-07-29 1988-10-18 Advanced Micro Devices, Inc. Monostable logic gate in a programmable logic array
US4771284A (en) * 1986-08-13 1988-09-13 International Business Machines Corporation Logic array with programmable element output generation

Also Published As

Publication number Publication date
EP0271412B1 (de) 1993-09-29
JPS63160358A (ja) 1988-07-04
EP0271412A2 (de) 1988-06-15
CA1307049C (en) 1992-09-01
EP0271412A3 (en) 1990-06-27
KR880008340A (ko) 1988-08-30
DE3787625T2 (de) 1994-04-28
US4899308A (en) 1990-02-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee