JPS57172592A - Nonvolatile semiconductor storage device - Google Patents

Nonvolatile semiconductor storage device

Info

Publication number
JPS57172592A
JPS57172592A JP5792981A JP5792981A JPS57172592A JP S57172592 A JPS57172592 A JP S57172592A JP 5792981 A JP5792981 A JP 5792981A JP 5792981 A JP5792981 A JP 5792981A JP S57172592 A JPS57172592 A JP S57172592A
Authority
JP
Japan
Prior art keywords
potential
point
setting
storage device
control gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5792981A
Other languages
Japanese (ja)
Other versions
JPS6233676B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5792981A priority Critical patent/JPS57172592A/en
Priority to GB8136789A priority patent/GB2089612B/en
Priority to US06/329,059 priority patent/US4467457A/en
Priority to DE19813148806 priority patent/DE3148806A1/en
Publication of JPS57172592A publication Critical patent/JPS57172592A/en
Publication of JPS6233676B2 publication Critical patent/JPS6233676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Abstract

PURPOSE:To improve reliability by setting a bias so that transistors (TR) euivalent to memory cells in a reference potential generating means perform triode operation all the time. CONSTITUTION:Instead of setting the control gate potential of a TR Mb to a potential lower than a Vc, it is set to the Vc, and the gate potential of a TR Gb equivalent to TRs G1-Gn for column selection connected between the TR Mb and a point Ab is set to a potential lower than the Vc obtained by two depletion type MOS TRs 17 and 18 connected in series between application points Vc and Vs. A potential at a point Bb can be set to the nearly intermediate potential of the amplitude of a signal at a point Ba, and the drain potential of the TR Mb is much lower than the control gate potential, so the TR Mb performs triode operation completely according to its bias state.
JP5792981A 1980-12-12 1981-04-17 Nonvolatile semiconductor storage device Granted JPS57172592A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5792981A JPS57172592A (en) 1981-04-17 1981-04-17 Nonvolatile semiconductor storage device
GB8136789A GB2089612B (en) 1980-12-12 1981-12-07 Nonvolatile semiconductor memory device
US06/329,059 US4467457A (en) 1980-12-12 1981-12-09 Nonvolatile semiconductor memory device
DE19813148806 DE3148806A1 (en) 1980-12-12 1981-12-10 NON-VOLATILE SEMICONDUCTOR MEMORY

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5792981A JPS57172592A (en) 1981-04-17 1981-04-17 Nonvolatile semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57172592A true JPS57172592A (en) 1982-10-23
JPS6233676B2 JPS6233676B2 (en) 1987-07-22

Family

ID=13069694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5792981A Granted JPS57172592A (en) 1980-12-12 1981-04-17 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57172592A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998394A (en) * 1982-11-26 1984-06-06 Hitachi Ltd Semiconductor storage device
JPS63160358A (en) * 1986-12-11 1988-07-04 フェアチャイルド　セミコンダクタ　コーポレーション High density rom in cmos gate array
JPH06283944A (en) * 1993-03-30 1994-10-07 Nec Corp Voltage to current converting circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998394A (en) * 1982-11-26 1984-06-06 Hitachi Ltd Semiconductor storage device
JPS63160358A (en) * 1986-12-11 1988-07-04 フェアチャイルド　セミコンダクタ　コーポレーション High density rom in cmos gate array
JPH06283944A (en) * 1993-03-30 1994-10-07 Nec Corp Voltage to current converting circuit

Also Published As

Publication number Publication date
JPS6233676B2 (en) 1987-07-22

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