FR2454185A1 - Composant semi-conducteur, notamment transistor a effet de champ, destine en particulier a fonctionner en hyperfrequences - Google Patents

Composant semi-conducteur, notamment transistor a effet de champ, destine en particulier a fonctionner en hyperfrequences

Info

Publication number
FR2454185A1
FR2454185A1 FR8007819A FR8007819A FR2454185A1 FR 2454185 A1 FR2454185 A1 FR 2454185A1 FR 8007819 A FR8007819 A FR 8007819A FR 8007819 A FR8007819 A FR 8007819A FR 2454185 A1 FR2454185 A1 FR 2454185A1
Authority
FR
France
Prior art keywords
field
semiconductor component
functioning
microwave
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8007819A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2454185A1 publication Critical patent/FR2454185A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'INVENTION CONCERNE UN COMPOSANT SEMI-CONDUCTEUR, DESTINE NOTAMMENT A FONCTIONNER EN HYPERFREQUENCES. IL COMPORTE UN SUBSTRAT SEMI-CONDUCTEUR 12, 14 SUR UNE SURFACE DUQUEL SONT DISPOSES DES ELECTRODES 18, 20, 16 DE SOURCE DE DRAIN ET DE GRILLE, ET DES CONDUCTEURS ELECTRIQUES 40, 42, 44, SOUS FORME DE TROUS METALLISES TRAVERSANT LE SUBSTRAT ET CONNECTES ELECTRIQUEMENT AUX ELECTRODES. L'INVENTION S'APPLIQUE NOTAMMENT A DES TRANSISTORS A EFFET DE CHAMP CONNECTES A UNE LIGNE A RUBAN.
FR8007819A 1979-04-09 1980-04-08 Composant semi-conducteur, notamment transistor a effet de champ, destine en particulier a fonctionner en hyperfrequences Withdrawn FR2454185A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2842179A 1979-04-09 1979-04-09

Publications (1)

Publication Number Publication Date
FR2454185A1 true FR2454185A1 (fr) 1980-11-07

Family

ID=21843361

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8007819A Withdrawn FR2454185A1 (fr) 1979-04-09 1980-04-08 Composant semi-conducteur, notamment transistor a effet de champ, destine en particulier a fonctionner en hyperfrequences

Country Status (5)

Country Link
JP (1) JPS55140272A (fr)
DE (1) DE3013196A1 (fr)
FR (1) FR2454185A1 (fr)
GB (1) GB2046514A (fr)
IT (1) IT8048031A0 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507409A1 (fr) * 1981-06-03 1982-12-10 Radiotechnique Compelec Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ

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US4531145A (en) * 1980-08-04 1985-07-23 Fine Particle Technology Corporation Method of fabricating complex micro-circuit boards and substrates and substrate
JPS5778655U (fr) * 1980-10-30 1982-05-15
FR2505094A1 (fr) * 1981-04-29 1982-11-05 Trt Telecom Radio Electr Procede de realisation des circuits hyperfrequences
FR2516311B1 (fr) * 1981-11-06 1985-10-11 Thomson Csf Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle
FR2554275B1 (fr) * 1983-10-26 1986-09-05 Radiotechnique Compelec Dispositif de connexion pour un semi-conducteur de puissance
FR2565030B1 (fr) * 1984-05-25 1986-08-22 Thomson Csf Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure
IT1175541B (it) * 1984-06-22 1987-07-01 Telettra Lab Telefon Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi' ottenuti
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US4800420A (en) * 1987-05-14 1989-01-24 Hughes Aircraft Company Two-terminal semiconductor diode arrangement
DE3718684A1 (de) * 1987-06-04 1988-12-22 Licentia Gmbh Halbleiterkoerper
JPH0821595B2 (ja) * 1987-07-28 1996-03-04 三菱電機株式会社 半導体装置
US5051811A (en) * 1987-08-31 1991-09-24 Texas Instruments Incorporated Solder or brazing barrier
US4925723A (en) * 1988-09-29 1990-05-15 Microwave Power, Inc. Microwave integrated circuit substrate including metal filled via holes and method of manufacture
DE3843787A1 (de) * 1988-12-24 1990-07-05 Standard Elektrik Lorenz Ag Verfahren und leiterplatte zum montieren eines halbleiter-bauelements
DE4135654A1 (de) * 1991-10-29 2003-03-27 Lockheed Corp Dichtgepackte Verbindungsstruktur, die eine Abstandshalterstruktur und einen Zwischenraum enthält
JPH06244216A (ja) * 1992-12-21 1994-09-02 Mitsubishi Electric Corp Ｉｐｇトランジスタ及びその製造方法，並びに半導体集積回路装置及びその製造方法
US5703405A (en) * 1993-03-15 1997-12-30 Motorola, Inc. Integrated circuit chip formed from processing two opposing surfaces of a wafer
WO1996013062A1 (fr) * 1994-10-19 1996-05-02 Ceram Incorporated Dispositif et procede de fabrication d'empilements de series de plaquettes
US6331722B1 (en) 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
SE515158C2 (sv) * 1999-02-10 2001-06-18 Ericsson Telefon Ab L M Halvledaranordning med jordanslutning via en ej genomgående plugg
EP1739736A1 (fr) 2005-06-30 2007-01-03 Interuniversitair Microelektronica Centrum ( Imec) Procede de fabrication d'un dispositif à semi-conducteur
EP1693891B1 (fr) * 2005-01-31 2019-07-31 IMEC vzw Procede de fabrication d'un dispositif à semi-conducteur
CN107980171B (zh) * 2016-12-23 2022-06-24 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
FR1486855A (fr) * 1965-07-17 1967-10-05
FR1524053A (fr) * 1951-01-28 1968-05-10 Telefunken Patent Circuit à corps solides constitués par une masse semi-conductrice comprenant des composants actifs incorporés et par une couche isolante comprenant des composants passifs, ainsi que par des conducteurs rapportés
FR2013735A1 (fr) * 1968-07-05 1970-04-10 Gen Electric Inf Ita
FR2067024A1 (fr) * 1969-11-07 1971-08-13 Ibm
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
FR1524053A (fr) * 1951-01-28 1968-05-10 Telefunken Patent Circuit à corps solides constitués par une masse semi-conductrice comprenant des composants actifs incorporés et par une couche isolante comprenant des composants passifs, ainsi que par des conducteurs rapportés
FR1486855A (fr) * 1965-07-17 1967-10-05
GB1159393A (en) * 1965-07-17 1969-07-23 Telefunken Patent Method of Making Contact to Semiconductor Components and Solid-state Circuits
FR2013735A1 (fr) * 1968-07-05 1970-04-10 Gen Electric Inf Ita
US3787252A (en) * 1968-07-05 1974-01-22 Honeywell Inf Systems Italia Connection means for semiconductor components and integrated circuits
FR2067024A1 (fr) * 1969-11-07 1971-08-13 Ibm
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
FR2316742A1 (fr) * 1975-06-30 1977-01-28 Varian Associates Transistor a effet de champ pour micro-ondes a contact d'electrodes traversant le support

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FR2507409A1 (fr) * 1981-06-03 1982-12-10 Radiotechnique Compelec Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ

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DE3013196A1 (de) 1980-10-30
IT8048031A0 (it) 1980-02-28
JPS55140272A (en) 1980-11-01
GB2046514A (en) 1980-11-12

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