FR2428919A1 - Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiques - Google Patents
Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiquesInfo
- Publication number
- FR2428919A1 FR2428919A1 FR7915136A FR7915136A FR2428919A1 FR 2428919 A1 FR2428919 A1 FR 2428919A1 FR 7915136 A FR7915136 A FR 7915136A FR 7915136 A FR7915136 A FR 7915136A FR 2428919 A1 FR2428919 A1 FR 2428919A1
- Authority
- FR
- France
- Prior art keywords
- thyristor
- current
- application
- thyristors
- trigger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003068 static effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003252 repetitive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
Thyristor réalisé de manière que plusieurs d'entre eux s'amorcent mutuellement lorsqu'ils sont montés en parallèle à condition qu'au moins l'un soit déjà amorcé. Le courant du thyristor amorcé doit être plus faible que son courant non répétitif de surcharge accidentelle à l'état passant. Les thyristors comprennent au moins deux électrodes sur la région de base située du côté de la cathode : l'une qui est la gâchette reçoit la tension d'amorçage. La résistance répartie entre la gâchette ZG et la région cathodique doit être très faible pour que la tension d'amorçage puisse agir directement sur la jonction d'émetteur Ji. Une seconde électrode GG, qui est génératrice, permet le prélèvement d'un courant lorsque le thyristor est amorcé. La resistance répartie entre celle-ci et la région 1 est suffisamment grande pour que le courant prélevé suffise à amorcer un thyristor correspondant par sa gâchette ZG. Application aux redresseurs statiques de puissance.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH652278A CH630491A5 (de) | 1978-06-15 | 1978-06-15 | Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen. |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2428919A1 true FR2428919A1 (fr) | 1980-01-11 |
Family
ID=4310933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7915136A Withdrawn FR2428919A1 (fr) | 1978-06-15 | 1979-06-13 | Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiques |
Country Status (8)
Country | Link |
---|---|
US (1) | US4231054A (fr) |
JP (1) | JPS553698A (fr) |
CH (1) | CH630491A5 (fr) |
DE (1) | DE2830382A1 (fr) |
FR (1) | FR2428919A1 (fr) |
GB (1) | GB2023343B (fr) |
IT (1) | IT1121080B (fr) |
SE (1) | SE7905052L (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2471048A1 (fr) * | 1979-12-07 | 1981-06-12 | Silicium Semiconducteur Ssc | Structure et procede de montage d'un composant semi-conducteur principal et d'un circuit auxiliaire |
JPS5917862A (ja) * | 1982-06-25 | 1984-01-30 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタの並列接続体 |
EP0240690B1 (fr) * | 1986-03-05 | 1991-04-10 | Siemens Aktiengesellschaft | Thyristor à résistance base-émetteur ajustable |
TW359024B (en) * | 1996-05-28 | 1999-05-21 | Winbond Electronics Corp | Stage silicon control rectifier protection circuit and the structure |
US6333664B1 (en) * | 2000-08-22 | 2001-12-25 | Agere Systems Guardian Corp. | Low operating power, high voltage ringing switch circuit |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1158256A (en) * | 1965-10-23 | 1969-07-16 | Westinghouse Electric Corp | Semiconductor Switch for Handling Rapidly Increasing Currents. |
US3462620A (en) * | 1967-07-18 | 1969-08-19 | Int Rectifier Corp | Axial bias gate for controlled rectifiers |
DE1589536A1 (de) * | 1967-08-01 | 1970-03-05 | Bbc Brown Boveri & Cie | Steuerbarer Gleichrichter mit mindestens zwei Steuerelektroden |
DE1589538A1 (de) * | 1967-08-09 | 1970-04-09 | Bbc Brown Boveri & Cie | Steuerbarer Gleichrichter |
DE2146178A1 (de) * | 1971-09-15 | 1973-03-22 | Bbc Brown Boveri & Cie | Thyristor mit zuendstromverstaerkung |
DE2341211A1 (de) * | 1973-08-16 | 1975-03-20 | Licentia Gmbh | Thyristor |
FR2250222A1 (en) * | 1973-11-07 | 1975-05-30 | Bbc Brown Boveri & Cie | Power thyristor firing cct. - has pilot thyristor controlling gate current of main thyristor |
CH574168A5 (en) * | 1974-10-14 | 1976-03-31 | Bbc Brown Boveri & Cie | Trial with efficient separation of control and transmission zones - has penetration depth of surface zone which allows control of current requirement |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
US3364440A (en) * | 1965-03-31 | 1968-01-16 | Texas Instruments Inc | Inverter circuits |
SE338363B (fr) * | 1967-03-16 | 1971-09-06 | Asea Ab | |
US3486088A (en) * | 1968-05-22 | 1969-12-23 | Nat Electronics Inc | Regenerative gate thyristor construction |
US3740584A (en) * | 1971-06-08 | 1973-06-19 | Gen Electric | High arrangement frequency scr gating |
-
1978
- 1978-06-15 CH CH652278A patent/CH630491A5/de not_active IP Right Cessation
- 1978-07-11 DE DE19782830382 patent/DE2830382A1/de not_active Withdrawn
-
1979
- 1979-05-22 US US06/041,332 patent/US4231054A/en not_active Expired - Lifetime
- 1979-06-11 SE SE7905052A patent/SE7905052L/ not_active Application Discontinuation
- 1979-06-13 GB GB7920571A patent/GB2023343B/en not_active Expired
- 1979-06-13 IT IT23510/79A patent/IT1121080B/it active
- 1979-06-13 FR FR7915136A patent/FR2428919A1/fr not_active Withdrawn
- 1979-06-13 JP JP7359579A patent/JPS553698A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1158256A (en) * | 1965-10-23 | 1969-07-16 | Westinghouse Electric Corp | Semiconductor Switch for Handling Rapidly Increasing Currents. |
US3462620A (en) * | 1967-07-18 | 1969-08-19 | Int Rectifier Corp | Axial bias gate for controlled rectifiers |
DE1589536A1 (de) * | 1967-08-01 | 1970-03-05 | Bbc Brown Boveri & Cie | Steuerbarer Gleichrichter mit mindestens zwei Steuerelektroden |
DE1589538A1 (de) * | 1967-08-09 | 1970-04-09 | Bbc Brown Boveri & Cie | Steuerbarer Gleichrichter |
DE2146178A1 (de) * | 1971-09-15 | 1973-03-22 | Bbc Brown Boveri & Cie | Thyristor mit zuendstromverstaerkung |
DE2341211A1 (de) * | 1973-08-16 | 1975-03-20 | Licentia Gmbh | Thyristor |
FR2250222A1 (en) * | 1973-11-07 | 1975-05-30 | Bbc Brown Boveri & Cie | Power thyristor firing cct. - has pilot thyristor controlling gate current of main thyristor |
CH574168A5 (en) * | 1974-10-14 | 1976-03-31 | Bbc Brown Boveri & Cie | Trial with efficient separation of control and transmission zones - has penetration depth of surface zone which allows control of current requirement |
Non-Patent Citations (1)
Title |
---|
EXBK/75 * |
Also Published As
Publication number | Publication date |
---|---|
CH630491A5 (de) | 1982-06-15 |
IT7923510A0 (it) | 1979-06-13 |
GB2023343A (en) | 1979-12-28 |
DE2830382A1 (de) | 1979-12-20 |
SE7905052L (sv) | 1979-12-16 |
GB2023343B (en) | 1982-09-29 |
IT1121080B (it) | 1986-03-26 |
JPS553698A (en) | 1980-01-11 |
US4231054A (en) | 1980-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |