FR2428919A1 - Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiques - Google Patents

Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiques

Info

Publication number
FR2428919A1
FR2428919A1 FR7915136A FR7915136A FR2428919A1 FR 2428919 A1 FR2428919 A1 FR 2428919A1 FR 7915136 A FR7915136 A FR 7915136A FR 7915136 A FR7915136 A FR 7915136A FR 2428919 A1 FR2428919 A1 FR 2428919A1
Authority
FR
France
Prior art keywords
thyristor
current
application
thyristors
trigger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7915136A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2428919A1 publication Critical patent/FR2428919A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

Thyristor réalisé de manière que plusieurs d'entre eux s'amorcent mutuellement lorsqu'ils sont montés en parallèle à condition qu'au moins l'un soit déjà amorcé. Le courant du thyristor amorcé doit être plus faible que son courant non répétitif de surcharge accidentelle à l'état passant. Les thyristors comprennent au moins deux électrodes sur la région de base située du côté de la cathode : l'une qui est la gâchette reçoit la tension d'amorçage. La résistance répartie entre la gâchette ZG et la région cathodique doit être très faible pour que la tension d'amorçage puisse agir directement sur la jonction d'émetteur Ji. Une seconde électrode GG, qui est génératrice, permet le prélèvement d'un courant lorsque le thyristor est amorcé. La resistance répartie entre celle-ci et la région 1 est suffisamment grande pour que le courant prélevé suffise à amorcer un thyristor correspondant par sa gâchette ZG. Application aux redresseurs statiques de puissance.
FR7915136A 1978-06-15 1979-06-13 Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiques Withdrawn FR2428919A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH652278A CH630491A5 (de) 1978-06-15 1978-06-15 Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen.

Publications (1)

Publication Number Publication Date
FR2428919A1 true FR2428919A1 (fr) 1980-01-11

Family

ID=4310933

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7915136A Withdrawn FR2428919A1 (fr) 1978-06-15 1979-06-13 Thyristor de puissance, son procede de realisation et application de thyristors de ce type aux circuits redresseurs statiques

Country Status (8)

Country Link
US (1) US4231054A (fr)
JP (1) JPS553698A (fr)
CH (1) CH630491A5 (fr)
DE (1) DE2830382A1 (fr)
FR (1) FR2428919A1 (fr)
GB (1) GB2023343B (fr)
IT (1) IT1121080B (fr)
SE (1) SE7905052L (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471048A1 (fr) * 1979-12-07 1981-06-12 Silicium Semiconducteur Ssc Structure et procede de montage d'un composant semi-conducteur principal et d'un circuit auxiliaire
JPS5917862A (ja) * 1982-06-25 1984-01-30 Hitachi Ltd ゲ−トタ−ンオフサイリスタの並列接続体
EP0240690B1 (fr) * 1986-03-05 1991-04-10 Siemens Aktiengesellschaft Thyristor à résistance base-émetteur ajustable
TW359024B (en) * 1996-05-28 1999-05-21 Winbond Electronics Corp Stage silicon control rectifier protection circuit and the structure
US6333664B1 (en) * 2000-08-22 2001-12-25 Agere Systems Guardian Corp. Low operating power, high voltage ringing switch circuit

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1158256A (en) * 1965-10-23 1969-07-16 Westinghouse Electric Corp Semiconductor Switch for Handling Rapidly Increasing Currents.
US3462620A (en) * 1967-07-18 1969-08-19 Int Rectifier Corp Axial bias gate for controlled rectifiers
DE1589536A1 (de) * 1967-08-01 1970-03-05 Bbc Brown Boveri & Cie Steuerbarer Gleichrichter mit mindestens zwei Steuerelektroden
DE1589538A1 (de) * 1967-08-09 1970-04-09 Bbc Brown Boveri & Cie Steuerbarer Gleichrichter
DE2146178A1 (de) * 1971-09-15 1973-03-22 Bbc Brown Boveri & Cie Thyristor mit zuendstromverstaerkung
DE2341211A1 (de) * 1973-08-16 1975-03-20 Licentia Gmbh Thyristor
FR2250222A1 (en) * 1973-11-07 1975-05-30 Bbc Brown Boveri & Cie Power thyristor firing cct. - has pilot thyristor controlling gate current of main thyristor
CH574168A5 (en) * 1974-10-14 1976-03-31 Bbc Brown Boveri & Cie Trial with efficient separation of control and transmission zones - has penetration depth of surface zone which allows control of current requirement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
SE338363B (fr) * 1967-03-16 1971-09-06 Asea Ab
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction
US3740584A (en) * 1971-06-08 1973-06-19 Gen Electric High arrangement frequency scr gating

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1158256A (en) * 1965-10-23 1969-07-16 Westinghouse Electric Corp Semiconductor Switch for Handling Rapidly Increasing Currents.
US3462620A (en) * 1967-07-18 1969-08-19 Int Rectifier Corp Axial bias gate for controlled rectifiers
DE1589536A1 (de) * 1967-08-01 1970-03-05 Bbc Brown Boveri & Cie Steuerbarer Gleichrichter mit mindestens zwei Steuerelektroden
DE1589538A1 (de) * 1967-08-09 1970-04-09 Bbc Brown Boveri & Cie Steuerbarer Gleichrichter
DE2146178A1 (de) * 1971-09-15 1973-03-22 Bbc Brown Boveri & Cie Thyristor mit zuendstromverstaerkung
DE2341211A1 (de) * 1973-08-16 1975-03-20 Licentia Gmbh Thyristor
FR2250222A1 (en) * 1973-11-07 1975-05-30 Bbc Brown Boveri & Cie Power thyristor firing cct. - has pilot thyristor controlling gate current of main thyristor
CH574168A5 (en) * 1974-10-14 1976-03-31 Bbc Brown Boveri & Cie Trial with efficient separation of control and transmission zones - has penetration depth of surface zone which allows control of current requirement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Also Published As

Publication number Publication date
CH630491A5 (de) 1982-06-15
IT7923510A0 (it) 1979-06-13
GB2023343A (en) 1979-12-28
DE2830382A1 (de) 1979-12-20
SE7905052L (sv) 1979-12-16
GB2023343B (en) 1982-09-29
IT1121080B (it) 1986-03-26
JPS553698A (en) 1980-01-11
US4231054A (en) 1980-10-28

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