JPS553698A - Power thyristor* method of fabricating and using same - Google Patents

Power thyristor* method of fabricating and using same

Info

Publication number
JPS553698A
JPS553698A JP7359579A JP7359579A JPS553698A JP S553698 A JPS553698 A JP S553698A JP 7359579 A JP7359579 A JP 7359579A JP 7359579 A JP7359579 A JP 7359579A JP S553698 A JPS553698 A JP S553698A
Authority
JP
Japan
Prior art keywords
fabricating
same
power thyristor
thyristor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7359579A
Other languages
English (en)
Inventor
Riyutsuchiyu Kurisuchian
Jitsuteitsuhi Roorando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri France SA filed Critical BBC Brown Boveri France SA
Publication of JPS553698A publication Critical patent/JPS553698A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
JP7359579A 1978-06-15 1979-06-13 Power thyristor* method of fabricating and using same Pending JPS553698A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH652278A CH630491A5 (de) 1978-06-15 1978-06-15 Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen.

Publications (1)

Publication Number Publication Date
JPS553698A true JPS553698A (en) 1980-01-11

Family

ID=4310933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7359579A Pending JPS553698A (en) 1978-06-15 1979-06-13 Power thyristor* method of fabricating and using same

Country Status (8)

Country Link
US (1) US4231054A (ja)
JP (1) JPS553698A (ja)
CH (1) CH630491A5 (ja)
DE (1) DE2830382A1 (ja)
FR (1) FR2428919A1 (ja)
GB (1) GB2023343B (ja)
IT (1) IT1121080B (ja)
SE (1) SE7905052L (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210675A (ja) * 1986-03-05 1987-09-16 シ−メンス、アクチエンゲゼルシヤフト サイリスタ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471048A1 (fr) * 1979-12-07 1981-06-12 Silicium Semiconducteur Ssc Structure et procede de montage d'un composant semi-conducteur principal et d'un circuit auxiliaire
JPS5917862A (ja) * 1982-06-25 1984-01-30 Hitachi Ltd ゲ−トタ−ンオフサイリスタの並列接続体
TW359024B (en) * 1996-05-28 1999-05-21 Winbond Electronics Corp Stage silicon control rectifier protection circuit and the structure
US6333664B1 (en) * 2000-08-22 2001-12-25 Agere Systems Guardian Corp. Low operating power, high voltage ringing switch circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
GB1158256A (en) * 1965-10-23 1969-07-16 Westinghouse Electric Corp Semiconductor Switch for Handling Rapidly Increasing Currents.
SE338363B (ja) * 1967-03-16 1971-09-06 Asea Ab
US3462620A (en) * 1967-07-18 1969-08-19 Int Rectifier Corp Axial bias gate for controlled rectifiers
DE1589536A1 (de) * 1967-08-01 1970-03-05 Bbc Brown Boveri & Cie Steuerbarer Gleichrichter mit mindestens zwei Steuerelektroden
DE1589538C3 (de) * 1967-08-09 1974-01-10 Brown, Boveri & Cie Ag, 6800 Mannheim Thyristor
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction
US3740584A (en) * 1971-06-08 1973-06-19 Gen Electric High arrangement frequency scr gating
DE2146178C3 (de) * 1971-09-15 1979-09-27 Brown, Boveri & Cie Ag, 6800 Mannheim Thyristor mit Steuerstromverstärkung
DE2341211C3 (de) * 1973-08-16 1978-09-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
DE2355507A1 (de) * 1973-11-07 1975-05-15 Bbc Brown Boveri & Cie Thyristorschaltung
CH574168A5 (en) * 1974-10-14 1976-03-31 Bbc Brown Boveri & Cie Trial with efficient separation of control and transmission zones - has penetration depth of surface zone which allows control of current requirement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210675A (ja) * 1986-03-05 1987-09-16 シ−メンス、アクチエンゲゼルシヤフト サイリスタ

Also Published As

Publication number Publication date
GB2023343B (en) 1982-09-29
IT7923510A0 (it) 1979-06-13
CH630491A5 (de) 1982-06-15
IT1121080B (it) 1986-03-26
DE2830382A1 (de) 1979-12-20
GB2023343A (en) 1979-12-28
FR2428919A1 (fr) 1980-01-11
SE7905052L (sv) 1979-12-16
US4231054A (en) 1980-10-28

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