JPS5717173A - Controlling rectifying device for semiconductor - Google Patents

Controlling rectifying device for semiconductor

Info

Publication number
JPS5717173A
JPS5717173A JP9061180A JP9061180A JPS5717173A JP S5717173 A JPS5717173 A JP S5717173A JP 9061180 A JP9061180 A JP 9061180A JP 9061180 A JP9061180 A JP 9061180A JP S5717173 A JPS5717173 A JP S5717173A
Authority
JP
Japan
Prior art keywords
layer
auxiliary electrode
main region
electrode
nem
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9061180A
Other languages
Japanese (ja)
Inventor
Takeshi Suzuki
Katsumi Akabane
Shigeki Sakuraba
Tadashi Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9061180A priority Critical patent/JPS5717173A/en
Publication of JPS5717173A publication Critical patent/JPS5717173A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Abstract

PURPOSE:To obtain a thyristor having amplifying gate structure in which an initial conductive region is increased by mounting an auxiliary electrode, an interval thereof with a main region is approximately equal to an opposing interval between the main region and an auxiliary electrode and one part thereof is wired electrically with the auxiliary electrode. CONSTITUTION:Gate currents applied to a gate electrode flow into the auxiliary electrode 4. When igniting an auxiliary thyristor region, currents are shunted and flow in a course of the auxiliary electrode 4 - a PB layer - the main region nEM of an nE layer - a cathode electrode 3 and a course of the auxiliary electrode 4 - the pB layer - the second auxiliary electrode 6 - the PB layer - the main region nEM of the nE layer - the cathode electrode 3, and even the main region nEM of the nE layer is ignited. Accordingly, the approximately whole fringe of the main region nEM of the nE layer is ignited, the initial conductive region is increased, a voltage drop in the forward direction is reduced and the thermal breakdown of a semiconductor substrate 1 is decreased.
JP9061180A 1980-07-04 1980-07-04 Controlling rectifying device for semiconductor Pending JPS5717173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9061180A JPS5717173A (en) 1980-07-04 1980-07-04 Controlling rectifying device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9061180A JPS5717173A (en) 1980-07-04 1980-07-04 Controlling rectifying device for semiconductor

Publications (1)

Publication Number Publication Date
JPS5717173A true JPS5717173A (en) 1982-01-28

Family

ID=14003269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9061180A Pending JPS5717173A (en) 1980-07-04 1980-07-04 Controlling rectifying device for semiconductor

Country Status (1)

Country Link
JP (1) JPS5717173A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148873A (en) * 1984-12-22 1986-07-07 Toshiba Corp Thyristor
JP2011151063A (en) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd Thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148873A (en) * 1984-12-22 1986-07-07 Toshiba Corp Thyristor
JP2011151063A (en) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd Thyristor

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