JPS54105990A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS54105990A
JPS54105990A JP1236178A JP1236178A JPS54105990A JP S54105990 A JPS54105990 A JP S54105990A JP 1236178 A JP1236178 A JP 1236178A JP 1236178 A JP1236178 A JP 1236178A JP S54105990 A JPS54105990 A JP S54105990A
Authority
JP
Japan
Prior art keywords
electrode
film
voltage drop
forward voltage
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1236178A
Other languages
Japanese (ja)
Inventor
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1236178A priority Critical patent/JPS54105990A/en
Publication of JPS54105990A publication Critical patent/JPS54105990A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To avoid the breakdown of the luminous element when the backward voltage is applied, by securing an opposite-polarity parallel connection between the luminous element such as the semiconductor laser element and the semiconductor rectifier element containing the PN junction featuring the forward voltage drop lower than the reverse dielectric strength of the luminous element and the reverse dielectric strength higher than the forward voltage drop of the luminous element respectively. CONSTITUTION:In film 2 is coated on supporter 1 made of Cu or the like featuring a high heat conductivity and high electric conductivity, and semiconductor laser element 3 with electrode 4 provided on the surface is adhered onto film 2 while securing a contact between electrode 4 and film 2. On the other hand, the Si diode doubling electrode post 7b is adhered on film 2 via Au electrode 10. The Si diode the forward voltage drop lower than the reverse dielectric strength of element 3 at the conducting time and can withstand well the application of the opposite polarity voltage of such amount equivalent to the amount of the forward voltage drop of element 3. In such constitution, lead wire 8 extending from the electrode at N-type region 6 of element 3 is connected to the P-type region 12 side of post 7b, and region 12 is connected to the power source via lead wire 9.
JP1236178A 1978-02-08 1978-02-08 Semiconductor light emitting device Pending JPS54105990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1236178A JPS54105990A (en) 1978-02-08 1978-02-08 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1236178A JPS54105990A (en) 1978-02-08 1978-02-08 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS54105990A true JPS54105990A (en) 1979-08-20

Family

ID=11803126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1236178A Pending JPS54105990A (en) 1978-02-08 1978-02-08 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS54105990A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812384A (en) * 1981-06-16 1983-01-24 Fujitsu Ltd Protective circuit for diode laser
JPS59155985A (en) * 1983-02-24 1984-09-05 Mitsubishi Electric Corp Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812384A (en) * 1981-06-16 1983-01-24 Fujitsu Ltd Protective circuit for diode laser
JPS59155985A (en) * 1983-02-24 1984-09-05 Mitsubishi Electric Corp Semiconductor laser device

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