FR2428080A1 - Methode d'attaque par dessication de l'aluminium et d'alliages de ce dernier - Google Patents

Methode d'attaque par dessication de l'aluminium et d'alliages de ce dernier

Info

Publication number
FR2428080A1
FR2428080A1 FR7913113A FR7913113A FR2428080A1 FR 2428080 A1 FR2428080 A1 FR 2428080A1 FR 7913113 A FR7913113 A FR 7913113A FR 7913113 A FR7913113 A FR 7913113A FR 2428080 A1 FR2428080 A1 FR 2428080A1
Authority
FR
France
Prior art keywords
etching
alloys
alloy
dessication
attacking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913113A
Other languages
English (en)
Other versions
FR2428080B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2428080A1 publication Critical patent/FR2428080A1/fr
Application granted granted Critical
Publication of FR2428080B1 publication Critical patent/FR2428080B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Description d'une méthode d'attaque par dessication de l'Al et d'alliages de ce dernier, qui comporte la production de décharges de plasma avec un mélange gazeux comprenant du trichlorure de bore, du fréon et/ou de l'oxygène qui y est incorporé et le modelage de l'Al ou d'un alliage de ce dernier par les décharges produites. Dans cette méthode d'attaque par dessication, la vitesse d'attaque d'Al ou d'un alliage de ce dernier est remarquablement améliorée par rapport à la vitesse d'attaque atteinte avec les techniques classiques, et la différence de la vitesse d'attaque entre l'Al ou un alliage de ce dernier et un autre matériau est remarquablement accrue.
FR7913113A 1978-06-05 1979-05-23 Methode d'attaque par dessication de l'aluminium et d'alliages de ce dernier Granted FR2428080A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6677278A JPS54158343A (en) 1978-06-05 1978-06-05 Dry etching method for al and al alloy

Publications (2)

Publication Number Publication Date
FR2428080A1 true FR2428080A1 (fr) 1980-01-04
FR2428080B1 FR2428080B1 (fr) 1982-08-27

Family

ID=13325483

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913113A Granted FR2428080A1 (fr) 1978-06-05 1979-05-23 Methode d'attaque par dessication de l'aluminium et d'alliages de ce dernier

Country Status (7)

Country Link
US (1) US4267013A (fr)
JP (1) JPS54158343A (fr)
CA (1) CA1116986A (fr)
DE (1) DE2922791C2 (fr)
FR (1) FR2428080A1 (fr)
GB (1) GB2022025B (fr)
NL (1) NL178982C (fr)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
DE3071299D1 (en) * 1979-07-31 1986-01-30 Fujitsu Ltd Dry etching of metal film
JPS5623276A (en) * 1979-07-31 1981-03-05 Fujitsu Ltd Dry etching method
US4325984B2 (en) * 1980-07-28 1998-03-03 Fairchild Camera & Inst Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
US4380488A (en) * 1980-10-14 1983-04-19 Branson International Plasma Corporation Process and gas mixture for etching aluminum
GB2087315B (en) * 1980-10-14 1984-07-18 Branson Int Plasma Plasma etching of aluminum
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
JPS5887276A (ja) * 1981-11-19 1983-05-25 Matsushita Electronics Corp ドライエツチング後処理方法
JPS5891171A (ja) * 1981-11-27 1983-05-31 Kokusai Electric Co Ltd アルミニウムおよびアルミニウム合金のプラズマエツチング方法
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
US4444618A (en) * 1983-03-03 1984-04-24 General Electric Company Processes and gas mixtures for the reactive ion etching of aluminum and aluminum alloys
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
JPS59189633A (ja) * 1983-04-13 1984-10-27 Fujitsu Ltd 半導体装置の製造方法
JPS60152031A (ja) * 1984-01-20 1985-08-10 Hitachi Ltd エツチング方法
US4547261A (en) * 1984-09-28 1985-10-15 Rca Corporation Anisotropic etching of aluminum
US4592800A (en) * 1984-11-02 1986-06-03 Oerlikon-Buhrle U.S.A. Inc. Method of inhibiting corrosion after aluminum etching
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4836886A (en) * 1987-11-23 1989-06-06 International Business Machines Corporation Binary chlorofluorocarbon chemistry for plasma etching
US4836887A (en) * 1987-11-23 1989-06-06 International Business Machines Corporation Chlorofluorocarbon additives for enhancing etch rates in fluorinated halocarbon/oxidant plasmas
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
US4919748A (en) * 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching
US5202291A (en) * 1990-09-26 1993-04-13 Intel Corporation High CF4 flow-reactive ion etch for aluminum patterning
US5211804A (en) * 1990-10-16 1993-05-18 Oki Electric Industry, Co., Ltd. Method for dry etching
JP2663704B2 (ja) * 1990-10-30 1997-10-15 日本電気株式会社 Ａｌ合金の腐食防止法
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5532447A (en) * 1993-12-06 1996-07-02 Aluminum Company Of America Method of cleaning an aluminum surface by plasma treatment
US5533635A (en) * 1994-10-11 1996-07-09 Chartered Semiconductor Manufacturing Pte. Ltd. Method of wafer cleaning after metal etch
US7294578B1 (en) * 1995-06-02 2007-11-13 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5780363A (en) * 1997-04-04 1998-07-14 International Business Machines Coporation Etching composition and use thereof
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US6033996A (en) * 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
US6150282A (en) * 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
JP2985858B2 (ja) * 1997-12-19 1999-12-06 日本電気株式会社 エッチング方法
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
US6200891B1 (en) 1998-08-13 2001-03-13 International Business Machines Corporation Removal of dielectric oxides
JP2002123907A (ja) * 2000-10-13 2002-04-26 Tdk Corp 薄膜磁気ヘッドの製造方法
JP4492413B2 (ja) * 2005-04-01 2010-06-30 セイコーエプソン株式会社 光半導体素子の製造方法および光半導体素子
US10916582B2 (en) 2017-12-30 2021-02-09 Spin Memory, Inc. Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951709A (en) * 1974-02-28 1976-04-20 Lfe Corporation Process and material for semiconductor photomask fabrication
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795557A (en) * 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
JPS5287985A (en) * 1976-01-19 1977-07-22 Mitsubishi Electric Corp Plasma etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951709A (en) * 1974-02-28 1976-04-20 Lfe Corporation Process and material for semiconductor photomask fabrication
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Also Published As

Publication number Publication date
NL7904410A (nl) 1979-12-07
JPS54158343A (en) 1979-12-14
GB2022025A (en) 1979-12-12
NL178982B (nl) 1986-01-16
US4267013A (en) 1981-05-12
CA1116986A (fr) 1982-01-26
FR2428080B1 (fr) 1982-08-27
NL178982C (nl) 1986-06-16
JPS559948B2 (fr) 1980-03-13
DE2922791C2 (de) 1985-04-25
DE2922791A1 (de) 1979-12-06
GB2022025B (en) 1982-07-14

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