GB2087315B - Plasma etching of aluminum - Google Patents

Plasma etching of aluminum

Info

Publication number
GB2087315B
GB2087315B GB8130894A GB8130894A GB2087315B GB 2087315 B GB2087315 B GB 2087315B GB 8130894 A GB8130894 A GB 8130894A GB 8130894 A GB8130894 A GB 8130894A GB 2087315 B GB2087315 B GB 2087315B
Authority
GB
United Kingdom
Prior art keywords
aluminum
plasma etching
etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8130894A
Other versions
GB2087315A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Branson International Plasma Corp
Original Assignee
Branson International Plasma Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Branson International Plasma Corp filed Critical Branson International Plasma Corp
Publication of GB2087315A publication Critical patent/GB2087315A/en
Application granted granted Critical
Publication of GB2087315B publication Critical patent/GB2087315B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
GB8130894A 1980-10-14 1981-10-13 Plasma etching of aluminum Expired GB2087315B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19661680A 1980-10-14 1980-10-14

Publications (2)

Publication Number Publication Date
GB2087315A GB2087315A (en) 1982-05-26
GB2087315B true GB2087315B (en) 1984-07-18

Family

ID=22726125

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8130894A Expired GB2087315B (en) 1980-10-14 1981-10-13 Plasma etching of aluminum

Country Status (3)

Country Link
JP (1) JPH0245714B2 (en)
DE (1) DE3140675A1 (en)
GB (1) GB2087315B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
JPH061770B2 (en) * 1984-01-30 1994-01-05 株式会社日立製作所 Dry etching method
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
JPS61235576A (en) * 1985-04-10 1986-10-20 Tokuda Seisakusho Ltd Dry etching device
JP2681058B2 (en) * 1986-04-03 1997-11-19 アネルバ株式会社 Dry etching method
JPH0727890B2 (en) * 1986-09-19 1995-03-29 日本電気株式会社 Dry etching method
DE3821207A1 (en) * 1988-06-23 1989-12-28 Leybold Ag ARRANGEMENT FOR COATING A SUBSTRATE WITH DIELECTRICS
DE3940820C2 (en) * 1989-12-11 1998-07-09 Leybold Ag Process for the treatment of workpieces by reactive ion etching
US5397433A (en) * 1993-08-20 1995-03-14 Vlsi Technology, Inc. Method and apparatus for patterning a metal layer
JP6061384B2 (en) * 2013-01-17 2017-01-18 国立大学法人静岡大学 Manufacturing method of aluminum / resin bonded body and aluminum / resin bonded body

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy
US4182646A (en) * 1978-07-27 1980-01-08 John Zajac Process of etching with plasma etch gas
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
FR2432560A1 (en) * 1978-08-02 1980-02-29 Texas Instruments Inc PROCESS FOR STRIPPING METALS, ESPECIALLY ALUMINUM, WITH SILICON TETRACHLORIDE PLASMA
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus

Also Published As

Publication number Publication date
JPS57123978A (en) 1982-08-02
GB2087315A (en) 1982-05-26
DE3140675C2 (en) 1991-03-07
DE3140675A1 (en) 1982-06-16
JPH0245714B2 (en) 1990-10-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19971013