FR2413785A1 - Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky - Google Patents

Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky

Info

Publication number
FR2413785A1
FR2413785A1 FR7739796A FR7739796A FR2413785A1 FR 2413785 A1 FR2413785 A1 FR 2413785A1 FR 7739796 A FR7739796 A FR 7739796A FR 7739796 A FR7739796 A FR 7739796A FR 2413785 A1 FR2413785 A1 FR 2413785A1
Authority
FR
France
Prior art keywords
schottky diode
semiconductor device
plane structure
monolithic semiconductor
mesa type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739796A
Other languages
English (en)
French (fr)
Other versions
FR2413785B1 (enrdf_load_stackoverflow
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7739796A priority Critical patent/FR2413785A1/fr
Priority to DE2854995A priority patent/DE2854995C2/de
Priority to GB7849491A priority patent/GB2011713B/en
Priority to CA318,356A priority patent/CA1123922A/en
Priority to JP16133978A priority patent/JPS54100673A/ja
Publication of FR2413785A1 publication Critical patent/FR2413785A1/fr
Application granted granted Critical
Publication of FR2413785B1 publication Critical patent/FR2413785B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7739796A 1977-12-30 1977-12-30 Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky Granted FR2413785A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (fr) 1977-12-30 1977-12-30 Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky
DE2854995A DE2854995C2 (de) 1977-12-30 1978-12-20 Integrierte Darlington-Schaltungsanordnung
GB7849491A GB2011713B (en) 1977-12-30 1978-12-21 Integrated darlington circuit
CA318,356A CA1123922A (en) 1977-12-30 1978-12-21 Integrated darlington circuit comprising at least one transistor associated with a schottky-diode
JP16133978A JPS54100673A (en) 1977-12-30 1978-12-28 Integrated darlington circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (fr) 1977-12-30 1977-12-30 Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky

Publications (2)

Publication Number Publication Date
FR2413785A1 true FR2413785A1 (fr) 1979-07-27
FR2413785B1 FR2413785B1 (enrdf_load_stackoverflow) 1982-11-12

Family

ID=9199556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739796A Granted FR2413785A1 (fr) 1977-12-30 1977-12-30 Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky

Country Status (5)

Country Link
JP (1) JPS54100673A (enrdf_load_stackoverflow)
CA (1) CA1123922A (enrdf_load_stackoverflow)
DE (1) DE2854995C2 (enrdf_load_stackoverflow)
FR (1) FR2413785A1 (enrdf_load_stackoverflow)
GB (1) GB2011713B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308957A (ja) * 1987-06-11 1988-12-16 Sanyo Electric Co Ltd ダ−リントン・トランジスタ
JP3549479B2 (ja) * 2000-10-16 2004-08-04 寛治 大塚 バラクタデバイスを備えた半導体集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290039A1 (fr) * 1974-10-31 1976-05-28 Sony Corp Composant semi-conducteur

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290039A1 (fr) * 1974-10-31 1976-05-28 Sony Corp Composant semi-conducteur

Also Published As

Publication number Publication date
GB2011713A (en) 1979-07-11
JPS54100673A (en) 1979-08-08
DE2854995C2 (de) 1985-06-20
JPS6136714B2 (enrdf_load_stackoverflow) 1986-08-20
DE2854995A1 (de) 1979-07-05
CA1123922A (en) 1982-05-18
FR2413785B1 (enrdf_load_stackoverflow) 1982-11-12
GB2011713B (en) 1982-04-28

Similar Documents

Publication Publication Date Title
FR2394174A1 (fr) Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse
FR2430090B1 (fr) Contacts ohmiques non allies sur des semi-conducteurs de type n du groupe iii(a)-v(a)
FR2386145A1 (fr) Dispositif electroluminescent a semi-conducteurs
FR2412944A1 (fr) Ensemble combine monolithique de deux transistors bipolaires complementaires
DE69109890D1 (de) Lateraler Heterogrenzflächen-Bipolartransistor.
FR2315171A1 (fr) Transistor notamment a base epitaxiale associe a une diode schottky montee en parallele sur la jonction collecteur-base
FR2413785A1 (fr) Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky
KR880005688A (ko) 헤테로 접합형 바이폴러트랜지스터
GB1303337A (enrdf_load_stackoverflow)
FR2408914A1 (fr) Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
FR1284326A (fr) Convertisseur de fréquence
FR2377706A1 (fr) Dispositif semi-conducteur integre du type darlington et son procede de fabrication
GB1477513A (en) Unidirectional thyristors
FR2410366A1 (fr) Transistor de type mesa et procede de realisation de ce transistor
JPS5615068A (en) Semiconductor device and manufacture thereof
ATE45645T1 (de) Bipolartransistor.
FR2386906A1 (fr) Thyristor pouvant etre commande par la lumiere
JPS52133761A (en) Integrated circuit
KR860007749A (ko) Sbd를 가진 고내압 바이포라 트랜지스터
UST969010I4 (en) Monolithically integrated semiconductor structure containing at least two devices in a common zone and technique for preventing parasitic transistor action
JPS6454761A (en) Semiconductor device
JPS6480062A (en) High withstand voltage unipolar and bipolar transistor
FR2406894A1 (fr) Element commutateur integre
JPS5467383A (en) Semiconductor device
JPS5658260A (en) Darlington junction type transistor and production thereof

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse