CA1123922A - Integrated darlington circuit comprising at least one transistor associated with a schottky-diode - Google Patents
Integrated darlington circuit comprising at least one transistor associated with a schottky-diodeInfo
- Publication number
- CA1123922A CA1123922A CA318,356A CA318356A CA1123922A CA 1123922 A CA1123922 A CA 1123922A CA 318356 A CA318356 A CA 318356A CA 1123922 A CA1123922 A CA 1123922A
- Authority
- CA
- Canada
- Prior art keywords
- zone
- layer
- conductivity type
- emitter
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 3
- 230000006872 improvement Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 229940086255 perform Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 235000014786 phosphorus Nutrition 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7739796 | 1977-12-30 | ||
| FR7739796A FR2413785A1 (fr) | 1977-12-30 | 1977-12-30 | Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1123922A true CA1123922A (en) | 1982-05-18 |
Family
ID=9199556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA318,356A Expired CA1123922A (en) | 1977-12-30 | 1978-12-21 | Integrated darlington circuit comprising at least one transistor associated with a schottky-diode |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS54100673A (enrdf_load_stackoverflow) |
| CA (1) | CA1123922A (enrdf_load_stackoverflow) |
| DE (1) | DE2854995C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2413785A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2011713B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308957A (ja) * | 1987-06-11 | 1988-12-16 | Sanyo Electric Co Ltd | ダ−リントン・トランジスタ |
| JP3549479B2 (ja) * | 2000-10-16 | 2004-08-04 | 寛治 大塚 | バラクタデバイスを備えた半導体集積回路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724659B2 (enrdf_load_stackoverflow) * | 1974-10-31 | 1982-05-25 | ||
| US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
| FR2335957A1 (fr) * | 1975-12-17 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur monolithique comprenant un pont de redressement |
-
1977
- 1977-12-30 FR FR7739796A patent/FR2413785A1/fr active Granted
-
1978
- 1978-12-20 DE DE2854995A patent/DE2854995C2/de not_active Expired
- 1978-12-21 CA CA318,356A patent/CA1123922A/en not_active Expired
- 1978-12-21 GB GB7849491A patent/GB2011713B/en not_active Expired
- 1978-12-28 JP JP16133978A patent/JPS54100673A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2011713A (en) | 1979-07-11 |
| JPS54100673A (en) | 1979-08-08 |
| DE2854995C2 (de) | 1985-06-20 |
| JPS6136714B2 (enrdf_load_stackoverflow) | 1986-08-20 |
| DE2854995A1 (de) | 1979-07-05 |
| FR2413785A1 (fr) | 1979-07-27 |
| FR2413785B1 (enrdf_load_stackoverflow) | 1982-11-12 |
| GB2011713B (en) | 1982-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |