FR2413785B1 - - Google Patents
Info
- Publication number
- FR2413785B1 FR2413785B1 FR7739796A FR7739796A FR2413785B1 FR 2413785 B1 FR2413785 B1 FR 2413785B1 FR 7739796 A FR7739796 A FR 7739796A FR 7739796 A FR7739796 A FR 7739796A FR 2413785 B1 FR2413785 B1 FR 2413785B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7739796A FR2413785A1 (fr) | 1977-12-30 | 1977-12-30 | Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky |
| DE2854995A DE2854995C2 (de) | 1977-12-30 | 1978-12-20 | Integrierte Darlington-Schaltungsanordnung |
| GB7849491A GB2011713B (en) | 1977-12-30 | 1978-12-21 | Integrated darlington circuit |
| CA318,356A CA1123922A (en) | 1977-12-30 | 1978-12-21 | Integrated darlington circuit comprising at least one transistor associated with a schottky-diode |
| JP16133978A JPS54100673A (en) | 1977-12-30 | 1978-12-28 | Integrated darlington circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7739796A FR2413785A1 (fr) | 1977-12-30 | 1977-12-30 | Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2413785A1 FR2413785A1 (fr) | 1979-07-27 |
| FR2413785B1 true FR2413785B1 (enrdf_load_stackoverflow) | 1982-11-12 |
Family
ID=9199556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7739796A Granted FR2413785A1 (fr) | 1977-12-30 | 1977-12-30 | Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS54100673A (enrdf_load_stackoverflow) |
| CA (1) | CA1123922A (enrdf_load_stackoverflow) |
| DE (1) | DE2854995C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2413785A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2011713B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308957A (ja) * | 1987-06-11 | 1988-12-16 | Sanyo Electric Co Ltd | ダ−リントン・トランジスタ |
| JP3549479B2 (ja) * | 2000-10-16 | 2004-08-04 | 寛治 大塚 | バラクタデバイスを備えた半導体集積回路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724659B2 (enrdf_load_stackoverflow) * | 1974-10-31 | 1982-05-25 | ||
| US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
| FR2335957A1 (fr) * | 1975-12-17 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur monolithique comprenant un pont de redressement |
-
1977
- 1977-12-30 FR FR7739796A patent/FR2413785A1/fr active Granted
-
1978
- 1978-12-20 DE DE2854995A patent/DE2854995C2/de not_active Expired
- 1978-12-21 CA CA318,356A patent/CA1123922A/en not_active Expired
- 1978-12-21 GB GB7849491A patent/GB2011713B/en not_active Expired
- 1978-12-28 JP JP16133978A patent/JPS54100673A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2011713A (en) | 1979-07-11 |
| JPS54100673A (en) | 1979-08-08 |
| DE2854995C2 (de) | 1985-06-20 |
| JPS6136714B2 (enrdf_load_stackoverflow) | 1986-08-20 |
| DE2854995A1 (de) | 1979-07-05 |
| CA1123922A (en) | 1982-05-18 |
| FR2413785A1 (fr) | 1979-07-27 |
| GB2011713B (en) | 1982-04-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |