FR2413784A1 - Circuit integre complexe a compensation des variations de tension dans une couche metallique - Google Patents

Circuit integre complexe a compensation des variations de tension dans une couche metallique

Info

Publication number
FR2413784A1
FR2413784A1 FR7901782A FR7901782A FR2413784A1 FR 2413784 A1 FR2413784 A1 FR 2413784A1 FR 7901782 A FR7901782 A FR 7901782A FR 7901782 A FR7901782 A FR 7901782A FR 2413784 A1 FR2413784 A1 FR 2413784A1
Authority
FR
France
Prior art keywords
metal layer
integrated circuit
complex integrated
voltage variations
compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7901782A
Other languages
English (en)
Other versions
FR2413784B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2413784A1 publication Critical patent/FR2413784A1/fr
Application granted granted Critical
Publication of FR2413784B1 publication Critical patent/FR2413784B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11801—Masterslice integrated circuits using bipolar technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

UN CIRCUIT INTEGRE COMPLEXE COMPREND UN GRAND NOMBRE DE ZONES ELEMENTAIRES DE CIRCUIT OU "MACRO" 17, QUI FORMENT UN RESEAU REGULIER. CHACUN DES CIRCUITS LOGIQUES CONSTITUANT UN "MACRO" VOIT SES RESISTANCES DETERMINEES SELECTIVEMENT DE FACONA COMPENSER LES VARIATIONS DE TENSION QUI APPARAISSENT RESPECTIVEMENT DANS LA COUCHE METALLIQUE DU RESEAU DE DISTRIBUTION D'ALIMENTATION ET DANS LA COUCHE METALLIQUE DU RESEAU DE DISTRIBUTION DE MASSE. SELON UN MODE DE REALISATION PREFERENTIEL, LES VALEURS DES RESISTANCES SONT DETERMINEES SELON CINQ NIVEAUX EN FONCTION DE LA DISTANCE PAR RAPPORT AUX PLOTS D'ALIMENTATION. POUR CE FAIRE ON UTILISE COMME PARAMETRE LA TENSION DE REFERENCE DES CIRCUITS LOGIQUES A COUPLAGE PAR LES EMETTEURS OU LEUR TENSION DE SORTIE AU NIVEAU BAS.
FR7901782A 1977-12-30 1979-01-24 Circuit integre complexe a compensation des variations de tension dans une couche metallique Granted FR2413784A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52158444A JPS60953B2 (ja) 1977-12-30 1977-12-30 半導体集積回路装置

Publications (2)

Publication Number Publication Date
FR2413784A1 true FR2413784A1 (fr) 1979-07-27
FR2413784B1 FR2413784B1 (fr) 1983-11-18

Family

ID=15671889

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7818389A Granted FR2413786A1 (fr) 1977-12-30 1978-06-20 Circuit integre complexe
FR7901782A Granted FR2413784A1 (fr) 1977-12-30 1979-01-24 Circuit integre complexe a compensation des variations de tension dans une couche metallique

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7818389A Granted FR2413786A1 (fr) 1977-12-30 1978-06-20 Circuit integre complexe

Country Status (6)

Country Link
US (1) US4255672A (fr)
JP (1) JPS60953B2 (fr)
DE (2) DE2826847C2 (fr)
FR (2) FR2413786A1 (fr)
GB (2) GB2011706B (fr)
NL (1) NL189889C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013088A1 (fr) * 1978-12-29 1980-07-09 Fujitsu Limited Microcircuit semiconducteur à intégration poussée

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399520A (en) * 1980-02-22 1983-08-16 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device
JPS56140648A (en) * 1980-04-04 1981-11-04 Hitachi Ltd Semiconductor integrated circuit device
GB2082354B (en) * 1980-08-21 1984-04-11 Burroughs Corp Improvements in or relating to wafer-scale integrated circuits
GB2083929B (en) * 1980-08-21 1984-03-07 Burroughs Corp Branched labyrinth wafer scale integrated circuit
US4528647A (en) * 1981-01-07 1985-07-09 Burroughs Corp. Wafer scale integrated circuit memories
US4417265A (en) * 1981-03-26 1983-11-22 National Semiconductor Corporation Lateral PNP power transistor
US4475119A (en) * 1981-04-14 1984-10-02 Fairchild Camera & Instrument Corporation Integrated circuit power transmission array
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5835963A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 集積回路装置
DE3382727D1 (de) * 1982-06-30 1994-01-27 Fujitsu Ltd Integrierte Halbleiterschaltungsanordnung.
KR910008521B1 (ko) * 1983-01-31 1991-10-18 가부시기가이샤 히다찌세이사꾸쇼 반도체집적회로
US4584653A (en) * 1983-03-22 1986-04-22 Fujitsu Limited Method for manufacturing a gate array integrated circuit device
US4608649A (en) * 1983-06-27 1986-08-26 International Business Machines Corporation Differential cascode voltage switch (DCVS) master slice for high efficiency/custom density physical design
US4615010A (en) * 1983-06-27 1986-09-30 International Business Machines Corporation Field effect transistor (FET) cascode current switch (FCCS)
US4607339A (en) * 1983-06-27 1986-08-19 International Business Machines Corporation Differential cascode current switch (DCCS) master slice for high efficiency/custom density physical design
JPS6017932A (ja) * 1983-07-09 1985-01-29 Fujitsu Ltd ゲ−ト・アレイ
JPS6027145A (ja) * 1983-07-25 1985-02-12 Hitachi Ltd 半導体集積回路装置
US4583111A (en) * 1983-09-09 1986-04-15 Fairchild Semiconductor Corporation Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients
JPS6065557A (ja) * 1983-09-21 1985-04-15 Fujitsu Ltd 集積回路装置
US4649417A (en) * 1983-09-22 1987-03-10 International Business Machines Corporation Multiple voltage integrated circuit packaging substrate
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
US4631572A (en) * 1983-09-27 1986-12-23 Trw Inc. Multiple path signal distribution to large scale integration chips
JPS6074455A (ja) * 1983-09-29 1985-04-26 Fujitsu Ltd マスタスライス集積回路
JP2564787B2 (ja) * 1983-12-23 1996-12-18 富士通株式会社 ゲートアレー大規模集積回路装置及びその製造方法
US4737836A (en) * 1983-12-30 1988-04-12 International Business Machines Corporation VLSI integrated circuit having parallel bonding areas
DE3585756D1 (de) * 1984-07-02 1992-05-07 Fujitsu Ltd Halbleiterschaltungsanordnung in hauptscheibentechnik.
US4774559A (en) * 1984-12-03 1988-09-27 International Business Machines Corporation Integrated circuit chip structure wiring and circuitry for driving highly capacitive on chip wiring nets
US4999519A (en) * 1987-12-04 1991-03-12 Hitachi Vlsi Engineering Corporation Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier
US5029280A (en) * 1988-04-13 1991-07-02 National Semiconductor Corp. ECL circuit for resistance and temperature bus drop compensation
JPH01278041A (ja) * 1988-04-30 1989-11-08 Hitachi Ltd 半導体集積回路装置
US4933576A (en) * 1988-05-13 1990-06-12 Fujitsu Limited Gate array device having macro cells for forming master and slave cells of master-slave flip-flop circuit
US5001362A (en) * 1989-02-14 1991-03-19 Texas Instruments Incorporated BiCMOS reference network
JPH03218668A (ja) * 1989-11-24 1991-09-26 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JPH04138720A (ja) * 1990-09-28 1992-05-13 Toshiba Corp 半導体装置
WO1993012540A1 (fr) * 1991-12-10 1993-06-24 Vlsi Technology, Inc. Circuit integre comportant un pas de plage variable
US5442282A (en) * 1992-07-02 1995-08-15 Lsi Logic Corporation Testing and exercising individual, unsingulated dies on a wafer
US5389556A (en) * 1992-07-02 1995-02-14 Lsi Logic Corporation Individually powering-up unsingulated dies on a wafer
US5648661A (en) * 1992-07-02 1997-07-15 Lsi Logic Corporation Integrated circuit wafer comprising unsingulated dies, and decoder arrangement for individually testing the dies
US5532174A (en) * 1994-04-22 1996-07-02 Lsi Logic Corporation Wafer level integrated circuit testing with a sacrificial metal layer
US5751015A (en) 1995-11-17 1998-05-12 Micron Technology, Inc. Semiconductor reliability test chip
US6111310A (en) * 1998-09-30 2000-08-29 Lsi Logic Corporation Radially-increasing core power bus grid architecture
US6137181A (en) * 1999-09-24 2000-10-24 Nguyen; Dzung Method for locating active support circuitry on an integrated circuit fabrication die
US6993447B2 (en) * 2003-08-26 2006-01-31 Oki Electric Industry Co., Ltd. System LSI
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US7772920B1 (en) * 2009-05-29 2010-08-10 Linear Technology Corporation Low thermal hysteresis bandgap voltage reference

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747078A (en) * 1972-06-28 1973-07-17 Ibm Compensation technique for variations in bit line impedance
FR2192383A1 (fr) * 1972-07-10 1974-02-08 Amdahl Corp
JPS5250181A (en) * 1975-10-21 1977-04-21 Oki Electric Ind Co Ltd Semiconductor integrated circuit device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1001908A (en) * 1962-08-31 1965-08-18 Texas Instruments Inc Semiconductor devices
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
JPS4913912B1 (fr) * 1967-11-29 1974-04-03
US3817797A (en) * 1969-05-12 1974-06-18 Ibm Construction of monolithic chip and method of distributing power there-in for individaul electronic devices constructed thereon
US3638202A (en) * 1970-03-19 1972-01-25 Bell Telephone Labor Inc Access circuit arrangement for equalized loading in integrated circuit arrays
US3621562A (en) * 1970-04-29 1971-11-23 Sylvania Electric Prod Method of manufacturing integrated circuit arrays
US3689803A (en) * 1971-03-30 1972-09-05 Ibm Integrated circuit structure having a unique surface metallization layout
JPS5435474B2 (fr) * 1973-03-26 1979-11-02
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747078A (en) * 1972-06-28 1973-07-17 Ibm Compensation technique for variations in bit line impedance
FR2192383A1 (fr) * 1972-07-10 1974-02-08 Amdahl Corp
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
JPS5250181A (en) * 1975-10-21 1977-04-21 Oki Electric Ind Co Ltd Semiconductor integrated circuit device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ABJP/77 *
EXRV/73 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013088A1 (fr) * 1978-12-29 1980-07-09 Fujitsu Limited Microcircuit semiconducteur à intégration poussée

Also Published As

Publication number Publication date
DE2826847A1 (de) 1979-07-05
FR2413786A1 (fr) 1979-07-27
JPS5493374A (en) 1979-07-24
GB2067015A (en) 1981-07-15
NL189889B (nl) 1993-03-16
GB2067015B (en) 1982-11-10
FR2413784B1 (fr) 1983-11-18
JPS60953B2 (ja) 1985-01-11
GB2011706B (en) 1982-08-25
FR2413786B1 (fr) 1983-09-16
GB2011706A (en) 1979-07-11
NL189889C (nl) 1993-08-16
US4255672A (en) 1981-03-10
DE2857467C2 (fr) 1988-02-18
DE2826847C2 (de) 1985-05-30
NL7806653A (nl) 1979-07-03

Similar Documents

Publication Publication Date Title
FR2413784A1 (fr) Circuit integre complexe a compensation des variations de tension dans une couche metallique
ES257693U (es) Deposito de sedimentacion
JPS5783922A (en) Delay circuit
IT1107487B (it) Perfezionamento nei circuiti di controllo dell'accensione di bruciatori di combustibile
GB2008549B (en) Scatter-machine for the regulated distribution of sand gravel or compost
Mannzmann HERRSCHAFT UNTER DEM ASPEKT KÖNIGLICHER MACHTPOLITIK: Zu den Inschriften Antiochos I. von Kommagene
Abder-Ruhman Mineralogical characteristics of soils from east central Alberta
FR2457605A2 (fr) Perfectionnements aux portes logiques a transistors mos multidrains
KURNOSOVA et al. Features of the excess radiation flux at heights of 200-300 km
JPS5572507A (en) Sand saving dam
Kuprianov Urban influences on the water balance of an environment
TURNER et al. Pedestrian movement characteristics on building ramps[Final Report]
Singer Lunar composition as a clue to the early history of the solar system.
SU566367A1 (ru) Устройство дл оценки качества канала св зи
MIAGCHENKOVA et al. Escaping radiation of the earth in the wavelength interval from 15 to 28 microns on the basis of'Cosmos' satellite measurements(Earth radiation flux spectral intensity measurements, noting latitudinal distributions, day and night variations and oceanic and continental curves)
Rogers Current State Board Activities in Ground Water Quality Management
Bowen The Eiden Phase component of Pearson Village
Khokhlova Some characteristics of the chemical composition of main-sequence stars and nucleosynthesis of elements
Vasileva et al. Verification of a long-range forecast of monthly median f 0 F 2 values
JPS5433493A (en) Method of steering of variable evaluation function
Boyce et al. Relative ages of lunar nearside plains
JPS5357941A (en) Multiplier using hall element
Abraamian et al. Observations of night airglow at Biurakan
DOUGHERTY OIL, GAS, AND WATER LAW--TODAY AND TOMORROW
ES248137U (es) Elemento de construccion