FR2412949A1 - Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised - Google Patents

Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Info

Publication number
FR2412949A1
FR2412949A1 FR7739159A FR7739159A FR2412949A1 FR 2412949 A1 FR2412949 A1 FR 2412949A1 FR 7739159 A FR7739159 A FR 7739159A FR 7739159 A FR7739159 A FR 7739159A FR 2412949 A1 FR2412949 A1 FR 2412949A1
Authority
FR
France
Prior art keywords
diode
schottky diode
magneto
magnetic field
surface contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739159A
Other languages
French (fr)
Other versions
FR2412949B1 (en
Inventor
Jean-Paul Bern
Jean Chretien
Georges Kamarinos
Michel Pellet
Pierre Viktorovitch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etat Francais
Original Assignee
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etat Francais filed Critical Etat Francais
Priority to FR7739159A priority Critical patent/FR2412949A1/en
Publication of FR2412949A1 publication Critical patent/FR2412949A1/en
Application granted granted Critical
Publication of FR2412949B1 publication Critical patent/FR2412949B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

The integral Schottky diode and magneto-diode combination provides a high voltage output for very low alternating or direct magnetic fields. The combination is built up on a sapphire or monocrystalline alumina substrate (2). This is overlaid by a thin silicon dioxide layer (3). The central region (3a) of this layer is thinned to about 15 to 30 angstroms and carries a small Schottky diode electrode (1) forming a surface barrier Schottky diode. P and N carrier injection regions (C1, C2) define the silicon dioxide region and have soldered metal electrodes (4, 5) allowing direct polarisation of the magneto-diode. The Schottky diode is reversed polarised.
FR7739159A 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised Granted FR2412949A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7739159A FR2412949A1 (en) 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739159A FR2412949A1 (en) 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Publications (2)

Publication Number Publication Date
FR2412949A1 true FR2412949A1 (en) 1979-07-20
FR2412949B1 FR2412949B1 (en) 1980-06-13

Family

ID=9199325

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739159A Granted FR2412949A1 (en) 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Country Status (1)

Country Link
FR (1) FR2412949A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148330A2 (en) * 1983-12-19 1985-07-17 LGZ LANDIS & GYR ZUG AG Integrable Hall element
WO2006028427A1 (en) * 2004-09-09 2006-03-16 Inessa Antonovna Bolshakova Magnetic field measuring sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1572426A (en) * 1967-04-26 1969-06-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1572426A (en) * 1967-04-26 1969-06-27

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148330A2 (en) * 1983-12-19 1985-07-17 LGZ LANDIS & GYR ZUG AG Integrable Hall element
EP0148330A3 (en) * 1983-12-19 1985-08-14 Lgz Landis & Gyr Zug Ag Integrable hall element
CH662905A5 (en) * 1983-12-19 1987-10-30 Landis & Gyr Ag INTEGRATED HALL ELEMENT.
US4782375A (en) * 1983-12-19 1988-11-01 Lgz Landis & Gyr Zug Integratable hall element
US4987467A (en) * 1983-12-19 1991-01-22 Lgz Landis & Gyr Zug Ag Integratable hall element
WO2006028427A1 (en) * 2004-09-09 2006-03-16 Inessa Antonovna Bolshakova Magnetic field measuring sensor

Also Published As

Publication number Publication date
FR2412949B1 (en) 1980-06-13

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