FR1572426A - - Google Patents

Info

Publication number
FR1572426A
FR1572426A FR1572426DA FR1572426A FR 1572426 A FR1572426 A FR 1572426A FR 1572426D A FR1572426D A FR 1572426DA FR 1572426 A FR1572426 A FR 1572426A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL120225A external-priority patent/PL55961B3/pl
Application filed filed Critical
Application granted granted Critical
Publication of FR1572426A publication Critical patent/FR1572426A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
FR1572426D 1967-04-26 1968-04-26 Expired FR1572426A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL120225A PL55961B3 (en) 1967-04-26

Publications (1)

Publication Number Publication Date
FR1572426A true FR1572426A (en) 1969-06-27

Family

ID=19949652

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1572426D Expired FR1572426A (en) 1967-04-26 1968-04-26

Country Status (1)

Country Link
FR (1) FR1572426A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412949A1 (en) * 1977-12-26 1979-07-20 France Etat Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised
EP0162214A1 (en) * 1984-04-18 1985-11-27 LGZ LANDIS & GYR ZUG AG Method and circuit for the temperature compensation of a Hall element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412949A1 (en) * 1977-12-26 1979-07-20 France Etat Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised
EP0162214A1 (en) * 1984-04-18 1985-11-27 LGZ LANDIS & GYR ZUG AG Method and circuit for the temperature compensation of a Hall element
US4634961A (en) * 1984-04-18 1987-01-06 Lgz Landis & Gyr Zug Ag Method and circuit for the temperature compensation of a hall element

Similar Documents

Publication Publication Date Title
AU425114B2 (en)
AU416737B2 (en)
AU2277767A (en)
AU342066A (en)
AU610966A (en)
AU2977667A (en)
AU2116667A (en)
AU2256867A (en)
AU3189468A (en)
AU2454867A (en)
AU3151267A (en)
AU2528767A (en)
BE692922A (en)
BE609934A (en)
AU25066A (en)
AU2406369A (en)
AU1868267A (en)
AU34866A (en)
AU408412B2 (en)
AU1763766A (en)
AU1614766A (en)
BE509738A (en)
BE710743A (en)
BE709679A (en)
AU97666A (en)

Legal Events

Date Code Title Description
ST Notification of lapse