FR2406915A1 - Circuit logique integre a injection - Google Patents

Circuit logique integre a injection

Info

Publication number
FR2406915A1
FR2406915A1 FR7731628A FR7731628A FR2406915A1 FR 2406915 A1 FR2406915 A1 FR 2406915A1 FR 7731628 A FR7731628 A FR 7731628A FR 7731628 A FR7731628 A FR 7731628A FR 2406915 A1 FR2406915 A1 FR 2406915A1
Authority
FR
France
Prior art keywords
circuit
conducting
normally non
bipolars
injection logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7731628A
Other languages
English (en)
French (fr)
Other versions
FR2406915B1 (US08124317-20120228-C00038.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KREMLEV VYACHESLAV
Original Assignee
KREMLEV VYACHESLAV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KREMLEV VYACHESLAV filed Critical KREMLEV VYACHESLAV
Priority to FR7731628A priority Critical patent/FR2406915A1/fr
Publication of FR2406915A1 publication Critical patent/FR2406915A1/fr
Application granted granted Critical
Publication of FR2406915B1 publication Critical patent/FR2406915B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
FR7731628A 1977-10-20 1977-10-20 Circuit logique integre a injection Granted FR2406915A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7731628A FR2406915A1 (fr) 1977-10-20 1977-10-20 Circuit logique integre a injection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7731628A FR2406915A1 (fr) 1977-10-20 1977-10-20 Circuit logique integre a injection

Publications (2)

Publication Number Publication Date
FR2406915A1 true FR2406915A1 (fr) 1979-05-18
FR2406915B1 FR2406915B1 (US08124317-20120228-C00038.png) 1980-06-20

Family

ID=9196749

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7731628A Granted FR2406915A1 (fr) 1977-10-20 1977-10-20 Circuit logique integre a injection

Country Status (1)

Country Link
FR (1) FR2406915A1 (US08124317-20120228-C00038.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458950A1 (fr) * 1979-06-12 1981-01-02 Ibm France Dispositif de commutation et son application a une alimentation de puissance du type commute
DE3041609A1 (de) * 1980-11-01 1982-06-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Paralleleanordnung von halbleiterschaltern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458950A1 (fr) * 1979-06-12 1981-01-02 Ibm France Dispositif de commutation et son application a une alimentation de puissance du type commute
EP0020978A1 (fr) * 1979-06-12 1981-01-07 International Business Machines Corporation Dispositif de commutation et son application à une alimentation de puissance du type commuté
DE3041609A1 (de) * 1980-11-01 1982-06-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Paralleleanordnung von halbleiterschaltern

Also Published As

Publication number Publication date
FR2406915B1 (US08124317-20120228-C00038.png) 1980-06-20

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Legal Events

Date Code Title Description
ST Notification of lapse