FR2393410A1 - Resistance electrique a couche et procede pour sa fabrication - Google Patents

Resistance electrique a couche et procede pour sa fabrication

Info

Publication number
FR2393410A1
FR2393410A1 FR7815237A FR7815237A FR2393410A1 FR 2393410 A1 FR2393410 A1 FR 2393410A1 FR 7815237 A FR7815237 A FR 7815237A FR 7815237 A FR7815237 A FR 7815237A FR 2393410 A1 FR2393410 A1 FR 2393410A1
Authority
FR
France
Prior art keywords
manufacturing
electrical layer
layer resistance
crucible
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7815237A
Other languages
English (en)
Other versions
FR2393410B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2393410A1 publication Critical patent/FR2393410A1/fr
Application granted granted Critical
Publication of FR2393410B1 publication Critical patent/FR2393410B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/08—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Abstract

L'invention concerne une résistance électrique à couche et un procédé pour sa fabrication. Dans une enceinte 1, dans laquelle est situé un creuset 2 contenant le matériau 3 destiné à former la couche 6 formant la résistance électrique, le matériau de la couche 6 est formé d'un mélange homogène d'un ou de plusieurs composés de chrome et de silicium et d'un ou de plusieurs oxydes du chrome et/ou du silicium, obtenu par pulvérisation ou par dépôt par vaporisation par chauffage du matériau 3 du creuset. Application notamment à la fabrication de résistances pour des circuits à couches minces.
FR7815237A 1977-05-31 1978-05-23 Resistance electrique a couche et procede pour sa fabrication Granted FR2393410A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2724498A DE2724498C2 (de) 1977-05-31 1977-05-31 Elektrischer Schichtwiderstand und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2393410A1 true FR2393410A1 (fr) 1978-12-29
FR2393410B1 FR2393410B1 (fr) 1981-09-11

Family

ID=6010290

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815237A Granted FR2393410A1 (fr) 1977-05-31 1978-05-23 Resistance electrique a couche et procede pour sa fabrication

Country Status (6)

Country Link
US (1) US4414274A (fr)
JP (1) JPS5945201B2 (fr)
CH (1) CH626468A5 (fr)
DE (1) DE2724498C2 (fr)
FR (1) FR2393410A1 (fr)
GB (1) GB1570841A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006442A2 (fr) * 1978-07-03 1980-01-09 International Business Machines Corporation Résistance en couche mince ajustable
EP0035351A2 (fr) * 1980-02-29 1981-09-09 Gould Inc. Elément déformable à flexion pour transducteur à jauges de contrainte et procédé pour sa fabrication
EP0079586A1 (fr) * 1981-11-13 1983-05-25 Hitachi, Ltd. Résistance
EP0079585A1 (fr) * 1981-11-13 1983-05-25 Hitachi, Ltd. Tête d'impression thermique
EP0101632A1 (fr) * 1982-08-24 1984-02-29 Koninklijke Philips Electronics N.V. Résistance
EP0172943A1 (fr) * 1984-08-24 1986-03-05 VDO Adolf Schindling AG Jauge de contrainte

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909804A1 (de) * 1979-03-13 1980-09-18 Siemens Ag Verfahren zum herstellen duenner, dotierter metallschichten durch reaktives aufstaeuben
DE3004149A1 (de) * 1980-02-05 1981-08-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur reproduzierbaren herstellung metallischer schichten
JPS56130374A (en) * 1980-03-19 1981-10-13 Hitachi Ltd Thermal head
JPS5884406A (ja) * 1981-11-13 1983-05-20 株式会社日立製作所 薄膜抵抗体の製造方法
JPS59209157A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd 感熱記録ヘッドの製造方法
JPS60182351A (ja) * 1984-02-28 1985-09-17 Diesel Kiki Co Ltd スイツチ付弁装置
DE3608887A1 (de) * 1985-03-22 1986-10-02 Canon K.K., Tokio/Tokyo Waermeerzeugungs-widerstandselement und waermeerzeugungs-widerstandsvorrichtung unter verwendung des waermeerzeugungs-widerstandselements
DE3609503A1 (de) * 1985-03-22 1986-10-02 Canon K.K., Tokio/Tokyo Heizwiderstandselement und heizwiderstand unter verwendung desselben
US4783369A (en) * 1985-03-23 1988-11-08 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
GB2174877B (en) * 1985-03-23 1989-03-15 Canon Kk Thermal recording head
DE3609975A1 (de) * 1985-03-25 1986-10-02 Canon K.K., Tokio/Tokyo Thermoaufzeichnungskopf
GB2176443B (en) * 1985-06-10 1990-11-14 Canon Kk Liquid jet recording head and recording system incorporating the same
US4682143A (en) * 1985-10-30 1987-07-21 Advanced Micro Devices, Inc. Thin film chromium-silicon-carbon resistor
JPS62245602A (ja) * 1986-04-17 1987-10-26 鐘淵化学工業株式会社 温度検出器
US4878770A (en) * 1987-09-09 1989-11-07 Analog Devices, Inc. IC chips with self-aligned thin film resistors
US5243320A (en) * 1988-02-26 1993-09-07 Gould Inc. Resistive metal layers and method for making same
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5605609A (en) * 1988-03-03 1997-02-25 Asahi Glass Company Ltd. Method for forming low refractive index film comprising silicon dioxide
JP2911186B2 (ja) * 1989-07-10 1999-06-23 科学技術振興事業団 複合酸化物薄膜
KR960005321B1 (ko) * 1990-04-24 1996-04-23 가부시끼가이샤 히다찌세이사꾸쇼 박막저항체를 갖는 전자회로소자 및 그 제조방법
US5420562A (en) * 1993-09-28 1995-05-30 Motorola, Inc. Resistor having geometry for enhancing radio frequency performance
JP2019090722A (ja) * 2017-11-15 2019-06-13 ミネベアミツミ株式会社 ひずみゲージ
JP2019090723A (ja) * 2017-11-15 2019-06-13 ミネベアミツミ株式会社 ひずみゲージ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3203830A (en) * 1961-11-24 1965-08-31 Int Resistance Co Electrical resistor
FR1555055A (fr) * 1967-03-30 1969-01-24

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE578799A (fr) * 1958-05-21
US3477935A (en) * 1966-06-07 1969-11-11 Union Carbide Corp Method of forming thin film resistors by cathodic sputtering
US3506556A (en) * 1968-02-28 1970-04-14 Ppg Industries Inc Sputtering of metal oxide films in the presence of hydrogen and oxygen
US3703456A (en) * 1969-12-22 1972-11-21 Gen Electric Method of making resistor thin films by reactive sputtering from a composite source
US3763026A (en) * 1969-12-22 1973-10-02 Gen Electric Method of making resistor thin films by reactive sputtering from a composite source
US3738926A (en) * 1972-03-28 1973-06-12 Bell Canada Method and apparatus for controlling the electrical properties of sputtered films
US4021277A (en) * 1972-12-07 1977-05-03 Sprague Electric Company Method of forming thin film resistor
US4048039A (en) * 1975-03-07 1977-09-13 Balzers Patent Und Beteiligungs-Ag Method of producing a light transmitting absorbing coating on substrates
US3996551A (en) * 1975-10-20 1976-12-07 The United States Of America As Represented By The Secretary Of The Navy Chromium-silicon oxide thin film resistors
US4051297A (en) * 1976-08-16 1977-09-27 Shatterproof Glass Corporation Transparent article and method of making the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3203830A (en) * 1961-11-24 1965-08-31 Int Resistance Co Electrical resistor
FR1555055A (fr) * 1967-03-30 1969-01-24

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006442A2 (fr) * 1978-07-03 1980-01-09 International Business Machines Corporation Résistance en couche mince ajustable
EP0006442A3 (en) * 1978-07-03 1980-01-23 International Business Machines Corporation Adjustable thin-film resistor
EP0035351A2 (fr) * 1980-02-29 1981-09-09 Gould Inc. Elément déformable à flexion pour transducteur à jauges de contrainte et procédé pour sa fabrication
EP0035351A3 (en) * 1980-02-29 1981-10-07 Gould Inc. Deformable flexure element for strain gage transducer and method of manufacture
EP0079586A1 (fr) * 1981-11-13 1983-05-25 Hitachi, Ltd. Résistance
EP0079585A1 (fr) * 1981-11-13 1983-05-25 Hitachi, Ltd. Tête d'impression thermique
EP0101632A1 (fr) * 1982-08-24 1984-02-29 Koninklijke Philips Electronics N.V. Résistance
EP0172943A1 (fr) * 1984-08-24 1986-03-05 VDO Adolf Schindling AG Jauge de contrainte

Also Published As

Publication number Publication date
DE2724498A1 (de) 1978-12-14
US4414274A (en) 1983-11-08
GB1570841A (en) 1980-07-09
CH626468A5 (fr) 1981-11-13
JPS5945201B2 (ja) 1984-11-05
JPS541898A (en) 1979-01-09
FR2393410B1 (fr) 1981-09-11
DE2724498C2 (de) 1982-06-03

Similar Documents

Publication Publication Date Title
FR2393410A1 (fr) Resistance electrique a couche et procede pour sa fabrication
US2853402A (en) Magnetic element and method for producing the same
US4028657A (en) Deposited layer type thermometric resistance structure
FR2332338A1 (fr) Procede pour revetir par depot ionique reactif un substrat isolant d'une couche d'oxyde d'au moins un metal
US4505798A (en) Magnetron sputtering apparatus
FR2389682A1 (fr)
US3110620A (en) Method of making plural layer thin film devices
US3514320A (en) Method of forming single crystal films by nonepitaxial growth
FR1064045A (fr) Procédé pour l'obtention de couches semi-conductrices
US3749658A (en) Method of fabricating transparent conductors
US3708403A (en) Self-aligning electroplating mask
FR2306750A1 (fr) Procede pour revetir la surface de divers substrats d'un revetement contenant un polymere qui n'est pas filmogene a la temperature ambiante
GB1212114A (en) Negative-temperature-coefficient resistors
JPS5650533A (en) Semiconductor device
FR2400756A1 (fr) Matiere a resistances, resistance realisee avec cette matiere et son procede de fabrication
JPS6082663A (ja) 混合物薄膜製造の方法および装置
US3985919A (en) Vapor deposition of cermet layers
Lardon et al. Influence of the substrate temperature and the discharge voltage on the structure of titanium films produced by ion-plating
JPS5688319A (en) Method for forming film pattern
Ito et al. Evaporation Characteristics of Iron-Nickel Alloys
KR850004129A (ko) 광학기록매체 및 그 제조방법
RU2005103C1 (ru) Способ получени пленок на основе халькогенидных стеклообразных полупроводников
US3315208A (en) Nitrogen stabilized titanium thin film resistor and method of making same
SU953672A1 (ru) Резистивный материал
JPS5627136A (en) Manufacture of photorecording thin film

Legal Events

Date Code Title Description
ST Notification of lapse