FR2378356A1 - Dispositif a transistors a effet de champ a porte trapezoidale - Google Patents

Dispositif a transistors a effet de champ a porte trapezoidale

Info

Publication number
FR2378356A1
FR2378356A1 FR7737953A FR7737953A FR2378356A1 FR 2378356 A1 FR2378356 A1 FR 2378356A1 FR 7737953 A FR7737953 A FR 7737953A FR 7737953 A FR7737953 A FR 7737953A FR 2378356 A1 FR2378356 A1 FR 2378356A1
Authority
FR
France
Prior art keywords
effect transistor
field effect
field
transistor device
trapezoidal door
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7737953A
Other languages
English (en)
French (fr)
Other versions
FR2378356B1 (OSRAM
Inventor
Gilbert Hadamard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2378356A1 publication Critical patent/FR2378356A1/fr
Application granted granted Critical
Publication of FR2378356B1 publication Critical patent/FR2378356B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Logic Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7737953A 1977-01-19 1977-12-09 Dispositif a transistors a effet de champ a porte trapezoidale Granted FR2378356A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76080677A 1977-01-19 1977-01-19

Publications (2)

Publication Number Publication Date
FR2378356A1 true FR2378356A1 (fr) 1978-08-18
FR2378356B1 FR2378356B1 (OSRAM) 1980-12-19

Family

ID=25060249

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7737953A Granted FR2378356A1 (fr) 1977-01-19 1977-12-09 Dispositif a transistors a effet de champ a porte trapezoidale

Country Status (5)

Country Link
US (1) UST979006I4 (OSRAM)
JP (1) JPS5390880A (OSRAM)
DE (1) DE2801293A1 (OSRAM)
FR (1) FR2378356A1 (OSRAM)
IT (1) IT1114163B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111534A4 (en) * 1982-06-22 1985-07-01 Motorola Inc ARRANGEMENT OF FIXED MEMORY CELLS WITH MULTIPLE STATES AND METHOD FOR PROGRAMMING A FIXED MEMORY CELL.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111534A4 (en) * 1982-06-22 1985-07-01 Motorola Inc ARRANGEMENT OF FIXED MEMORY CELLS WITH MULTIPLE STATES AND METHOD FOR PROGRAMMING A FIXED MEMORY CELL.

Also Published As

Publication number Publication date
DE2801293A1 (de) 1978-07-20
IT1114163B (it) 1986-01-27
FR2378356B1 (OSRAM) 1980-12-19
UST979006I4 (en) 1979-02-06
JPS5390880A (en) 1978-08-10

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Legal Events

Date Code Title Description
ST Notification of lapse