FR2375627A1 - Procede de realisation d'un masque negatif sur un substrat - Google Patents

Procede de realisation d'un masque negatif sur un substrat

Info

Publication number
FR2375627A1
FR2375627A1 FR7735131A FR7735131A FR2375627A1 FR 2375627 A1 FR2375627 A1 FR 2375627A1 FR 7735131 A FR7735131 A FR 7735131A FR 7735131 A FR7735131 A FR 7735131A FR 2375627 A1 FR2375627 A1 FR 2375627A1
Authority
FR
France
Prior art keywords
substrate
metal
mask
negative mask
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735131A
Other languages
English (en)
Other versions
FR2375627B1 (fr
Inventor
Heinrich A Andres
Hartmut F Kolbe
Horst Schlagdenhaufen
Frank A Achwarzbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2375627A1 publication Critical patent/FR2375627A1/fr
Application granted granted Critical
Publication of FR2375627B1 publication Critical patent/FR2375627B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Abstract

Procédé de réalisation d'un masque négatif sur un substrat. Dans le procédé décrit, un masque positif 2 est d'abord réalisé en un métal I sur un substrat transparent 1, selon une configuration désirée. Une couche photorésistante positive 3 est appliquée sur le substrat 1 et sur le masque 2, puis est exposée à travers le substrat 1. Après développement par un révélateur, un métal II est alors déposé par vaporisation sur la surface du substrat 1 et de l'îlot photorésistant 3 restant après ce développement. L'îlot 3 avec la position de la couche 4 de métal II placée dessus est éliminé grâce à un procédé par soulèvement. Puis on élimine le masque positif 2 en métal I dans un décapant sélectif jusqu'à ce qu'il ne reste sur le substrat que le masque négatif 4 en métal II avec la géométrie adéquate. On peut utiliser le chrome comme métal I et le titane comme métal II. Application à la fabrication des dispositifs à semiconducteurs et plus particulièrement à la fabrication des masques utilisés dans les étapes de photolithographie.
FR7735131A 1976-12-23 1977-11-18 Procede de realisation d'un masque negatif sur un substrat Granted FR2375627A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762658400 DE2658400A1 (de) 1976-12-23 1976-12-23 Verfahren zur herstellung einer negativen maske auf einem substrat

Publications (2)

Publication Number Publication Date
FR2375627A1 true FR2375627A1 (fr) 1978-07-21
FR2375627B1 FR2375627B1 (fr) 1980-08-22

Family

ID=5996378

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7735131A Granted FR2375627A1 (fr) 1976-12-23 1977-11-18 Procede de realisation d'un masque negatif sur un substrat

Country Status (5)

Country Link
US (1) US4174219A (fr)
JP (1) JPS5379466A (fr)
DE (1) DE2658400A1 (fr)
FR (1) FR2375627A1 (fr)
GB (1) GB1537634A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057268A2 (fr) * 1981-02-02 1982-08-11 International Business Machines Corporation Méthode pour la fabrication de masques lithographiques opaques aux rayons X
EP0195724A2 (fr) * 1985-03-20 1986-09-24 Fujitsu Limited Masque de modulation spatiale de phase, procédé de fabrication et procédé pour la formation de réseaux de diffraction diphasés
EP0290670A2 (fr) * 1987-04-11 1988-11-17 VDO Adolf Schindling AG Procédé pour réaliser une surface texturée
WO2009067162A1 (fr) * 2007-11-20 2009-05-28 Eastman Kodak Company Masque coloré combiné avec un dépôt sur des zones sélectionnées

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293624A (en) * 1979-06-26 1981-10-06 The Perkin-Elmer Corporation Method for making a mask useful in X-ray lithography
DE2946235C3 (de) * 1979-11-16 1982-04-08 Dr. Johannes Heidenhain Gmbh, 8225 Traunreut Verfahren zur Erzeugung einer Belichtungsmaske zur Herstellung von mattstreuenden Strukturen neben opaken und/oder transparenten Strukturen
US4423137A (en) * 1980-10-28 1983-12-27 Quixote Corporation Contact printing and etching method of making high density recording medium
US4352835A (en) * 1981-07-01 1982-10-05 Western Electric Co., Inc. Masking portions of a substrate
US4379833A (en) * 1981-12-31 1983-04-12 International Business Machines Corporation Self-aligned photoresist process
US4391849A (en) * 1982-04-12 1983-07-05 Memorex Corporation Metal oxide patterns with planar surface
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
US4882262A (en) * 1987-09-28 1989-11-21 Honeywell Inc. Self-aligning aperture
US4948706A (en) * 1987-12-30 1990-08-14 Hoya Corporation Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material
JPH0242761A (ja) * 1988-04-20 1990-02-13 Matsushita Electric Ind Co Ltd アクティブマトリクス基板の製造方法
GB8812235D0 (en) * 1988-05-24 1988-06-29 Jones B L Manufacturing electronic devices
GB8825826D0 (en) * 1988-11-04 1988-12-07 Gen Electric Co Plc Deposition processes
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
GB2230871A (en) * 1989-04-11 1990-10-31 Coates Brothers Plc Making metal patterns.
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
WO1994017449A1 (fr) * 1993-01-21 1994-08-04 Sematech, Inc. Structure de masque de decalage de phase comprenant un revetement optique multicouche qui ameliore la transmission
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5395740A (en) * 1993-01-27 1995-03-07 Motorola, Inc. Method for fabricating electrode patterns
KR100288742B1 (ko) * 1997-03-12 2001-05-02 윤종용 광도파로소자의제조방법
JP2003101360A (ja) * 2001-09-19 2003-04-04 Murata Mfg Co Ltd 弾性表面波素子の電極パターン形成方法
US6749969B2 (en) 2001-11-14 2004-06-15 International Business Machines Corporation Reverse tone process for masks
US20080213482A1 (en) * 2007-03-01 2008-09-04 Stephan Lvovich Logunov Method of making a mask for sealing a glass package

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3712816A (en) * 1967-11-13 1973-01-23 Fairchild Camera Instr Co Process for making hard surface transparent mask
US3615462A (en) * 1968-11-06 1971-10-26 Zenith Radio Corp Processing black-surround screens
US3661580A (en) * 1970-01-30 1972-05-09 Rca Corp Photographic method for producing a cathode-ray tube screen structure
US3669665A (en) * 1971-02-18 1972-06-13 Ibm Process for making resist stencils from photographic stripping films and for using same
US3745094A (en) * 1971-03-26 1973-07-10 Ibm Two resist method for printed circuit structure
US3878007A (en) * 1971-11-18 1975-04-15 Rca Corp Method of depositing a pattern of metal plated areas on an insulating substrate
US4018938A (en) * 1975-06-30 1977-04-19 International Business Machines Corporation Fabrication of high aspect ratio masks

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057268A2 (fr) * 1981-02-02 1982-08-11 International Business Machines Corporation Méthode pour la fabrication de masques lithographiques opaques aux rayons X
EP0057268A3 (fr) * 1981-02-02 1982-11-10 International Business Machines Corporation Méthode pour la fabrication de masques lithographiques opaques aux rayons X
EP0195724A2 (fr) * 1985-03-20 1986-09-24 Fujitsu Limited Masque de modulation spatiale de phase, procédé de fabrication et procédé pour la formation de réseaux de diffraction diphasés
EP0195724A3 (en) * 1985-03-20 1990-05-16 Fujitsu Limited Spatial phase modulating masks and production processes thereof, and processes for the formation of phase-shifted diffraction gratings
EP0290670A2 (fr) * 1987-04-11 1988-11-17 VDO Adolf Schindling AG Procédé pour réaliser une surface texturée
EP0290670A3 (fr) * 1987-04-11 1991-01-30 VDO Adolf Schindling AG Procédé pour réaliser une surface texturée
WO2009067162A1 (fr) * 2007-11-20 2009-05-28 Eastman Kodak Company Masque coloré combiné avec un dépôt sur des zones sélectionnées

Also Published As

Publication number Publication date
DE2658400A1 (de) 1978-06-29
FR2375627B1 (fr) 1980-08-22
US4174219A (en) 1979-11-13
GB1537634A (en) 1979-01-04
JPS5379466A (en) 1978-07-13

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Legal Events

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