FR2371748A1 - Cellule de memoire compacte comportant un seul transistor - Google Patents
Cellule de memoire compacte comportant un seul transistorInfo
- Publication number
- FR2371748A1 FR2371748A1 FR7734458A FR7734458A FR2371748A1 FR 2371748 A1 FR2371748 A1 FR 2371748A1 FR 7734458 A FR7734458 A FR 7734458A FR 7734458 A FR7734458 A FR 7734458A FR 2371748 A1 FR2371748 A1 FR 2371748A1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- single transistor
- cell containing
- connection means
- compact memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
Cellule de mémoire comportant un seul transistor. Cette cellule utilise deux régions de matériau conducteur électriquement isolées mais partiellement superposées pour permettre au transistor de contrôler un stockage de charge dans un condensateur de stockage passif associé à la cellule de mémoire, et une matrice i x j de cellules de mémoire est munie d'un premier moyen de connexion dans une rangée choisie en tant que conducteur de mot et d'un second moyen de connexion dans une colonne choisie en tant que conducteur de bit. Application à la fabrication de mémoires d'ordinateur rapides et de grande capacité.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74280476A | 1976-11-18 | 1976-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2371748A1 true FR2371748A1 (fr) | 1978-06-16 |
Family
ID=24986292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7734458A Withdrawn FR2371748A1 (fr) | 1976-11-18 | 1977-11-16 | Cellule de memoire compacte comportant un seul transistor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5363992A (fr) |
DE (1) | DE2746690A1 (fr) |
FR (1) | FR2371748A1 (fr) |
GB (1) | GB1562650A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5619654A (en) * | 1979-07-27 | 1981-02-24 | Hitachi Ltd | Manufacture of semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2148581A1 (fr) * | 1971-08-09 | 1973-03-23 | Ibm | |
NL7603784A (nl) * | 1975-04-11 | 1976-10-13 | Fujitsu Ltd | Werkwijze voor de vervaardiging van een halfge- leidergeheugeninrichting, alsmede inrichting ver- kregen volgens deze werkwijze. |
FR2310609A1 (fr) * | 1975-05-05 | 1976-12-03 | Intel Corp | Cellule et paire de cellules de memoire a acces direct sans contact |
US3996658A (en) * | 1975-03-31 | 1976-12-14 | Fujitsu Ltd. | Process for producing semiconductor memory device |
-
1977
- 1977-06-23 GB GB2620777A patent/GB1562650A/en not_active Expired
- 1977-10-18 DE DE19772746690 patent/DE2746690A1/de active Pending
- 1977-11-10 JP JP13416977A patent/JPS5363992A/ja active Pending
- 1977-11-16 FR FR7734458A patent/FR2371748A1/fr not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2148581A1 (fr) * | 1971-08-09 | 1973-03-23 | Ibm | |
US3996658A (en) * | 1975-03-31 | 1976-12-14 | Fujitsu Ltd. | Process for producing semiconductor memory device |
NL7603784A (nl) * | 1975-04-11 | 1976-10-13 | Fujitsu Ltd | Werkwijze voor de vervaardiging van een halfge- leidergeheugeninrichting, alsmede inrichting ver- kregen volgens deze werkwijze. |
US4031608A (en) * | 1975-04-11 | 1977-06-28 | Fujitsu Ltd. | Process for producing semiconductor memory device utilizing selective diffusion of the polycrystalline silicon electrodes |
FR2310609A1 (fr) * | 1975-05-05 | 1976-12-03 | Intel Corp | Cellule et paire de cellules de memoire a acces direct sans contact |
Non-Patent Citations (1)
Title |
---|
EXBK/72 * |
Also Published As
Publication number | Publication date |
---|---|
GB1562650A (en) | 1980-03-12 |
DE2746690A1 (de) | 1978-05-24 |
JPS5363992A (en) | 1978-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4542486A (en) | Semiconductor memory device | |
US4539660A (en) | Semiconductor integrated circuit | |
KR102195321B1 (ko) | 감지 증폭기 구성물 | |
US4700328A (en) | High speed and high efficiency layout for dram circuits | |
FR2371042A1 (fr) | Memoire dynamique a acces direct, avec des cellules de memoire de grande capacite | |
KR890016573A (ko) | 반도체기억장치 | |
US5361223A (en) | Semiconductor memory device comprising a plurality of memory arrays with improved peripheral circuit location and interconnection arrangement | |
US5375095A (en) | Semiconductor memory apparatus with reduced line widths | |
KR900000904A (ko) | 반도체기억장치와 이것을 이용한 데이터패스(data path) | |
KR850004877A (ko) | 배선 지연이 적은 배선 및 데코우더를 가진 반도체 메모리 | |
KR900017187A (ko) | 반도체 기억장치 | |
US5029127A (en) | Bipolar SRAM having word lines as vertically stacked pairs of conductive lines parallelly formed with holding current lines | |
KR940026952A (ko) | 반도체 메모리 장치 | |
KR940004652A (ko) | 반도체 판독전용 메모리 | |
KR860007738A (ko) | 반도체 메모리(memory) 장치 | |
FR2371748A1 (fr) | Cellule de memoire compacte comportant un seul transistor | |
JP3213639B2 (ja) | アドレス信号デコーダ | |
US5698872A (en) | Semiconductor memory wherein metallic interconnection layer is applied with the same potential as word line and is connected to word line in regions other than memory cells | |
JPS62102557A (ja) | メモリ・アレイ | |
US5184321A (en) | Semiconductor memory device comprising a plurality of memory arrays with improved peripheral circuit location and interconnection arrangement | |
KR960036074A (ko) | 반도체 기억 장치 | |
US4115871A (en) | MOS random memory array | |
JPS6255234B2 (fr) | ||
KR890001092A (ko) | 반도체 메모리 장치 | |
KR890002888A (ko) | 반도체 집적회로장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |