FR2365212A1 - Dispositif a transfert de charge - Google Patents

Dispositif a transfert de charge

Info

Publication number
FR2365212A1
FR2365212A1 FR7728003A FR7728003A FR2365212A1 FR 2365212 A1 FR2365212 A1 FR 2365212A1 FR 7728003 A FR7728003 A FR 7728003A FR 7728003 A FR7728003 A FR 7728003A FR 2365212 A1 FR2365212 A1 FR 2365212A1
Authority
FR
France
Prior art keywords
transfer device
charge transfer
mhz
input
video
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7728003A
Other languages
English (en)
Other versions
FR2365212B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2365212A1 publication Critical patent/FR2365212A1/fr
Application granted granted Critical
Publication of FR2365212B1 publication Critical patent/FR2365212B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45034—One or more added reactive elements, capacitive or inductive elements, to the amplifying transistors in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45118—At least one reactive element being added to at least one feedback circuit of a dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45151—At least one resistor being added at the input of a dif amp

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
  • Peptides Or Proteins (AREA)

Abstract

Dispositif à transfert de charges, dans lequel l'information est transportée à l'intérieur d'une couche semiconductrice et qui est utilisé comme ligne électronique pour établir un retard variable dans des signaux à video-fréquence. La fréquence d'horloge est variée entre 15 MHz et 35 MHz. Les << paquets >> de charge sont formés par intégration du courant de signal d'entrée sur la totalité de la période du signal d'horloge. De ce fait, la diaphotie du signal d'horloge vers la partie d'entrée n'influence pas défavorablement le signal vidéo à traiter. De plus, la caractéristique non linéaire propre à la source de courant d'entrée est linéarisée par une contre-réaction en courant à l'aide d'un amplificateur opérationnel. Application : Semiconducteurs.
FR7728003A 1976-09-17 1977-09-16 Dispositif a transfert de charge Granted FR2365212A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7610351A NL7610351A (nl) 1976-09-17 1976-09-17 Ladingsoverdrachtinrichting.

Publications (2)

Publication Number Publication Date
FR2365212A1 true FR2365212A1 (fr) 1978-04-14
FR2365212B1 FR2365212B1 (fr) 1983-11-18

Family

ID=19826916

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7728003A Granted FR2365212A1 (fr) 1976-09-17 1977-09-16 Dispositif a transfert de charge

Country Status (11)

Country Link
US (1) US4159430A (fr)
JP (1) JPS5338273A (fr)
AT (1) AT374972B (fr)
CA (1) CA1107397A (fr)
DE (1) DE2740203C2 (fr)
ES (1) ES462377A1 (fr)
FR (1) FR2365212A1 (fr)
GB (1) GB1587957A (fr)
IT (1) IT1085416B (fr)
NL (1) NL7610351A (fr)
SE (1) SE414433B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435128A1 (fr) * 1978-08-31 1980-03-28 Siemens Ag Interrupteur a soufflage magnetique en rotation de l'arc
FR2626102A1 (fr) * 1988-01-19 1989-07-21 Thomson Csf Memoire a transfert de charges et procede de fabrication de cette memoire

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3068106D1 (en) * 1979-08-29 1984-07-12 Rockwell International Corp Ccd integrated circuit
DE3032332A1 (de) * 1980-08-27 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Ausgangsstufe einer monolithisch integrierten ladu ngsverschiebeanordnung
US4562363A (en) * 1982-11-29 1985-12-31 Tektronix, Inc. Method for using a charge coupled device as a peak detector
JPS6316670A (ja) * 1986-07-09 1988-01-23 Fuji Photo Film Co Ltd 電荷結合素子を用いた遅延素子
NL8800851A (nl) * 1988-04-05 1989-11-01 Philips Nv Halfgeleidergeheugeninrichting.
FR2632144A1 (fr) * 1988-05-31 1989-12-01 Thomson Csf Perfectionnements aux dispositifs photosensibles a transfert de ligne
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
US5929471A (en) * 1997-05-30 1999-07-27 Dalsa, Inc. Structure and method for CCD sensor stage selection
US6566949B1 (en) * 2000-08-31 2003-05-20 International Business Machines Corporation Highly linear high-speed transconductance amplifier for Gm-C filters
WO2002058228A1 (fr) * 2001-01-18 2002-07-25 Koninklijke Philips Electronics N.V. Circuit r.f. a impedance capacitive active
JP2008060550A (ja) * 2006-07-31 2008-03-13 Sanyo Electric Co Ltd 撮像装置
KR101554369B1 (ko) * 2007-01-19 2015-09-18 인터실 아메리카스 엘엘씨 전하영역 파이프라인의 아날로그 디지털 변환기
CN101622602B (zh) * 2007-01-23 2012-01-04 肯耐特股份有限公司 用于流水线化电荷畴a/d转换器的模拟纠错

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
DE2236311A1 (de) * 1972-07-24 1974-02-07 Sauer Achsenfab Fahrerhauskippvorrichtung
CA1096042A (fr) * 1973-06-13 1981-02-17 Walter F. Kosonocky Injection du signal dans un circuit a transfert de charge
JPS516447A (en) * 1974-07-05 1976-01-20 Hitachi Ltd Denkaisososhino shingoisohoshiki
JPS5144481A (ja) * 1974-10-14 1976-04-16 Matsushita Electric Ind Co Ltd Denkatensososhi

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/76 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435128A1 (fr) * 1978-08-31 1980-03-28 Siemens Ag Interrupteur a soufflage magnetique en rotation de l'arc
FR2626102A1 (fr) * 1988-01-19 1989-07-21 Thomson Csf Memoire a transfert de charges et procede de fabrication de cette memoire
EP0325524A1 (fr) * 1988-01-19 1989-07-26 Thomson-Csf Mémoire à transfert de charges et procédé de fabrication de cette mémoire

Also Published As

Publication number Publication date
DE2740203C2 (de) 1985-03-07
FR2365212B1 (fr) 1983-11-18
NL7610351A (nl) 1978-03-21
AT374972B (de) 1984-06-25
IT1085416B (it) 1985-05-28
SE7710273L (sv) 1978-03-18
US4159430A (en) 1979-06-26
ES462377A1 (es) 1978-11-01
JPS5338273A (en) 1978-04-08
SE414433B (sv) 1980-07-28
ATA660877A (de) 1983-10-15
CA1107397A (fr) 1981-08-18
GB1587957A (en) 1981-04-15
DE2740203A1 (de) 1978-03-23
JPS5711507B2 (fr) 1982-03-04

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Legal Events

Date Code Title Description
ST Notification of lapse