FR2356975A1 - CONTACT TYPE PHOTOLITHOGRAPHIC PRINTING PROCESS FOR OBTAINING HIGH RESOLUTION PROFILES AND APPARATUS USING SUCH A PROCESS - Google Patents

CONTACT TYPE PHOTOLITHOGRAPHIC PRINTING PROCESS FOR OBTAINING HIGH RESOLUTION PROFILES AND APPARATUS USING SUCH A PROCESS

Info

Publication number
FR2356975A1
FR2356975A1 FR7716799A FR7716799A FR2356975A1 FR 2356975 A1 FR2356975 A1 FR 2356975A1 FR 7716799 A FR7716799 A FR 7716799A FR 7716799 A FR7716799 A FR 7716799A FR 2356975 A1 FR2356975 A1 FR 2356975A1
Authority
FR
France
Prior art keywords
high resolution
contact type
obtaining high
photolithographic printing
printing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7716799A
Other languages
French (fr)
Other versions
FR2356975B1 (en
Inventor
Constantin Lapadula
Burn J Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2356975A1 publication Critical patent/FR2356975A1/en
Application granted granted Critical
Publication of FR2356975B1 publication Critical patent/FR2356975B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Procédé d'exposition d'une couche photorésistante à un faisceau lumineux pour obtenir des ouvertures à résolution élevée dans cette couche photorésistante. Le faisceau lumineux 42 est envoyé sur un miroir rotatif 44 qui le réfléchit sur une structure constituée par un substrat 26, une couche photorésistante 28 et un masque 38 comportant des ouvertures 40. Les zones exposées 34 de la couche 28 sont définies et modifiées en faisant tourner le miroir rotatif 44. La couche 28 est ensuite développée pour être utilisée dans une étape ultérieure de fabrication des dispositifs semi-conducteurs.A method of exposing a photoresist layer to a light beam to obtain high resolution openings in this photoresist layer. The light beam 42 is sent to a rotating mirror 44 which reflects it on a structure constituted by a substrate 26, a photoresist layer 28 and a mask 38 comprising openings 40. The exposed zones 34 of the layer 28 are defined and modified by making rotating the rotating mirror 44. Layer 28 is then developed for use in a subsequent manufacturing step of semiconductor devices.

FR7716799A 1976-06-30 1977-05-26 CONTACT TYPE PHOTOLITHOGRAPHIC PRINTING PROCESS FOR OBTAINING HIGH RESOLUTION PROFILES AND APPARATUS USING SUCH A PROCESS Granted FR2356975A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70143776A 1976-06-30 1976-06-30

Publications (2)

Publication Number Publication Date
FR2356975A1 true FR2356975A1 (en) 1978-01-27
FR2356975B1 FR2356975B1 (en) 1978-11-03

Family

ID=24817371

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7716799A Granted FR2356975A1 (en) 1976-06-30 1977-05-26 CONTACT TYPE PHOTOLITHOGRAPHIC PRINTING PROCESS FOR OBTAINING HIGH RESOLUTION PROFILES AND APPARATUS USING SUCH A PROCESS

Country Status (3)

Country Link
JP (1) JPS533170A (en)
FR (1) FR2356975A1 (en)
GB (1) GB1527179A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412410A1 (en) * 1977-12-23 1979-07-20 Ibm METHOD AND APPARATUS FOR MANUFACTURING A SET OF NOZZLES FOR INKJET PRINTERS
EP0006459A2 (en) * 1978-06-29 1980-01-09 Siemens Aktiengesellschaft Application of an electroforming process to the preparation of precise flat pack components
EP0025380A1 (en) * 1979-09-10 1981-03-18 Roumiguières, Jean-Louis Process for transferring onto a support the true shadow of a mask pierced with regularly distributed slits, and application of this process to photolithography in particular
EP0050474A2 (en) * 1980-10-14 1982-04-28 EASTMAN KODAK COMPANY (a New Jersey corporation) Process for preparing elements containing interlaid arrays of compositions in microareas and elements
FR2519157A1 (en) * 1981-12-30 1983-07-01 Labo Electronique Physique Sub-micron pattern formation for semiconductor device mfr. - uses irradiation of sub-micron pattern layer on X=ray sensitive coating having thickness of approximately two microns

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153738A (en) * 1980-04-30 1981-11-27 Fujitsu Ltd Method for contact exposure
DE3315665A1 (en) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München MANUFACTURE OF GALVANOPLASTIC FLAT PARTS WITH TOTATIONALLY UNSYMMETRIC, CONE-SHAPED STRUCTURES
JPS63299395A (en) * 1987-05-29 1988-12-06 Mitsubishi Electric Corp Aligner
JPH1022222A (en) * 1995-12-29 1998-01-23 Hyundai Electron Ind Co Ltd Aligner
WO2020108973A2 (en) * 2018-11-27 2020-06-04 Ams Ag Formation of three-dimensional structures using grey-scale photolithography

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2104273A5 (en) * 1970-08-12 1972-04-14 Rank Organisation Ltd
FR2132043A1 (en) * 1971-04-06 1972-11-17 Ibm

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2104273A5 (en) * 1970-08-12 1972-04-14 Rank Organisation Ltd
FR2132043A1 (en) * 1971-04-06 1972-11-17 Ibm

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US: "IBM TECHNICAL DISCLOSURE BULLETIN", VOLUME 19, NO. 5, OCTOBRE1976) *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412410A1 (en) * 1977-12-23 1979-07-20 Ibm METHOD AND APPARATUS FOR MANUFACTURING A SET OF NOZZLES FOR INKJET PRINTERS
EP0006459A2 (en) * 1978-06-29 1980-01-09 Siemens Aktiengesellschaft Application of an electroforming process to the preparation of precise flat pack components
EP0006459A3 (en) * 1978-06-29 1980-01-23 Siemens Aktiengesellschaft Berlin Und Munchen Electroforming process
EP0025380A1 (en) * 1979-09-10 1981-03-18 Roumiguières, Jean-Louis Process for transferring onto a support the true shadow of a mask pierced with regularly distributed slits, and application of this process to photolithography in particular
FR2465255A1 (en) * 1979-09-10 1981-03-20 Roumiguieres Jean Louis PROCESS FOR REPORTING ON A SUPPORT THE FAIRLY SHADOW OF A MASK PERCE OF PERIODICALLY DISTRIBUTED SLOTS, AND APPLICATION OF THIS METHOD IN PARTICULAR IN PHOTOLITHOGRAVURE
EP0050474A2 (en) * 1980-10-14 1982-04-28 EASTMAN KODAK COMPANY (a New Jersey corporation) Process for preparing elements containing interlaid arrays of compositions in microareas and elements
EP0050474A3 (en) * 1980-10-14 1983-01-26 Eastman Kodak Company Process for preparing elements containing interlaid arrays of compositions in microareas and elements
FR2519157A1 (en) * 1981-12-30 1983-07-01 Labo Electronique Physique Sub-micron pattern formation for semiconductor device mfr. - uses irradiation of sub-micron pattern layer on X=ray sensitive coating having thickness of approximately two microns

Also Published As

Publication number Publication date
FR2356975B1 (en) 1978-11-03
GB1527179A (en) 1978-10-04
JPS533170A (en) 1978-01-12

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Legal Events

Date Code Title Description
ST Notification of lapse