JP2676833B2 - Method for forming photoresist pattern - Google Patents
Method for forming photoresist patternInfo
- Publication number
- JP2676833B2 JP2676833B2 JP63258723A JP25872388A JP2676833B2 JP 2676833 B2 JP2676833 B2 JP 2676833B2 JP 63258723 A JP63258723 A JP 63258723A JP 25872388 A JP25872388 A JP 25872388A JP 2676833 B2 JP2676833 B2 JP 2676833B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- photoresist
- photoresist film
- film
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はフォトレジストパターンの形成方法に関す
る。The present invention relates to a method for forming a photoresist pattern.
〔従来の技術〕 半導体装置の微細化を実施するにあたって、フォトレ
ジストパターンの微細化が必要である。従来の高解像の
フォトレジストパターンを得る方法としては、単層のフ
ォトレジストの成分組成、化学構造等を変える事により
解像性を高めてゆく方法、２層レジストプロセスや３層
レジストプロセスなどの多層レジストプロセスにより得
る方法などがある。[Prior Art] In order to miniaturize a semiconductor device, it is necessary to miniaturize a photoresist pattern. As a conventional method for obtaining a high-resolution photoresist pattern, a method of increasing the resolution by changing the component composition and chemical structure of a single-layer photoresist, a two-layer resist process, a three-layer resist process, etc. There is a method of obtaining it by the multi-layer resist process.
上述した従来の高解像のレジストパターンを得る技術
で、単層のフォトレジストを利用する技術は、微少投影
露光装置の露光波長が単一波長の為、定在波の影響によ
り解像度に限界がある。また単層でのフォーカスマージ
ンが少い為、段差のある半導体基板上に高解像のパター
ンを形成する場合、そのパターン形状を劣化させるとい
う可能性がある。The above-mentioned conventional technique for obtaining a high-resolution resist pattern, which uses a single-layer photoresist, has a limit in resolution due to the influence of standing waves because the exposure wavelength of a microprojection exposure apparatus is a single wavelength. is there. Further, since the focus margin of a single layer is small, when a high resolution pattern is formed on a semiconductor substrate having a step, the pattern shape may be deteriorated.
多層レジストプロセスを利用する技術は、そのフォト
レジストパターンの形成方法が複雑であることから、半
導体装置の量産製造には適さないという欠点がある。The technique using the multi-layer resist process has a drawback that it is not suitable for mass production of semiconductor devices because the method of forming the photoresist pattern is complicated.
本発明のフォトレジストパターンの形成方法は、半導
体基板上にフォトレジスト膜を形成する工程と、前記フ
ォトレジスト膜の表面にのみに所望のパターンを露光し
転写する工程と、前記フォトレジスト膜のパターン未転
写部の表面に光学的不透明膜を形成する工程と、不透明
膜が形成された前記フォトレジスト膜に全面露光を行う
工程と、全面露光された前記フォトレジスト膜のパター
ン露光部を現像により取り除く工程とを含んで構成され
る。The method for forming a photoresist pattern of the present invention comprises a step of forming a photoresist film on a semiconductor substrate, a step of exposing and transferring a desired pattern only on the surface of the photoresist film, and a pattern of the photoresist film. The step of forming an optically opaque film on the surface of the untransferred portion, the step of exposing the photoresist film on which the opaque film is formed to the entire surface, and the pattern-exposed portion of the photoresist film exposed to the entire surface are removed by development. And a process.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を説明するための工程順に
示した半導体チップの断面図である。FIG. 1 is a sectional view of a semiconductor chip shown in the order of steps for explaining an embodiment of the present invention.
まず第１図（ａ）に示すように、半導体基板１上にフ
ォトレジスト膜２を回転塗布により形成する。次で所望
のパターンの描かれたフォトマスク３を介してフォトレ
ジスト膜２上に露光光A,例えば436nmの波長を有する光
で露光しフォトレジスト膜２表面にある感光剤のみを光
分解させ、露光部４を形成する。First, as shown in FIG. 1A, a photoresist film 2 is formed on a semiconductor substrate 1 by spin coating. Next, the photoresist film 2 is exposed to the exposure light A, for example, light having a wavelength of 436 nm, through the photomask 3 on which a desired pattern is drawn, and only the photosensitizer on the surface of the photoresist film 2 is photodecomposed. The exposed portion 4 is formed.
次に第１図（ｂ）に示すように、芳香族アミンを水溶
液としたもの、あるいは非極性溶媒溶液としたものをフ
ォトレジスト膜の表面に浸漬させ処理し、未露光部の感
光剤と発色反応させる。この操作により光学的不透明膜
５をフォトレジスト膜２の表面に形成する。Next, as shown in FIG. 1 (b), a solution of aromatic amine in an aqueous solution or a solution of a non-polar solvent is immersed in the surface of the photoresist film for treatment, and the unexposed area is exposed to the photosensitive agent and color development. React. By this operation, the optically opaque film 5 is formed on the surface of the photoresist film 2.
次に第１図（ｃ）に示すように、フォトレジスト膜２
に露光光Ｂを用いて全面露光を行う。光学的不透明膜５
で覆われた部分は露光光Ｂを通過させない為、これがそ
のままフォトマスクとして働く。そして表面が既に露光
されている部分４は、そのままパターンの得られる適正
露光時間で露光される。この時の露光光Ｂの波長を任意
に組み合わせる事で定在波の影響を低減させる事ができ
る。すなわち、露光光Ｂとしては、例えば436nmと365nm
の波長を有する光を用いることができる。Next, as shown in FIG. 1C, the photoresist film 2
Then, the entire surface is exposed by using the exposure light B. Optically opaque film 5
Since the exposure light B does not pass through the portion covered with, this works as it is as a photomask. Then, the portion 4 of which the surface has already been exposed is exposed as it is for an appropriate exposure time for obtaining a pattern. The influence of the standing wave can be reduced by arbitrarily combining the wavelengths of the exposure light B at this time. That is, as the exposure light B, for example, 436 nm and 365 nm
It is possible to use light having a wavelength of.
次に第１図（ｄ）に示すように、露光されたフォトレ
ジスト膜２を現像することにより、高解像のフォトレジ
ストパターンが得られる。また表面に光学的不透明膜５
を形成したフォトレジスト膜は、従来のフォトレジスト
膜に比べ、広いフォーカスマージンを持つ単層のフォト
レジスト膜として使用できる。Next, as shown in FIG. 1D, the exposed photoresist film 2 is developed to obtain a photoresist pattern with high resolution. Also, an optically opaque film 5 on the surface
The formed photoresist film can be used as a single-layer photoresist film having a wider focus margin as compared with the conventional photoresist film.
尚、上記実施例においては、光学的不透明膜５を芳香
族アミンの水溶液または非極性溶媒溶液としたものを用
いて形成した場合について説明したが、これに限定され
るものではなく、アンモニア蒸気で表面処理を行い光学
的不透明膜５を形成してもよい。この場合非極性溶媒や
水溶液等によるフォトレジスト膜表面の膜減りや劣化を
低減できるため、より形状の良いパターン形成が可能で
ある。In addition, although the case where the optically opaque film 5 is formed by using an aromatic amine aqueous solution or a non-polar solvent solution has been described in the above embodiment, the present invention is not limited to this, and ammonia vapor may be used. The surface treatment may be performed to form the optically opaque film 5. In this case, since it is possible to reduce the film loss and deterioration of the photoresist film surface due to the non-polar solvent or the aqueous solution, it is possible to form a pattern having a better shape.
以上説明したように本発明は、フォトレジストの表面
にのみパターンを露光して転写し、次で未露光部に光学
的不透明膜を形成させた後、全面露光を行うことによ
り、単一波長の露光による定在波の影響を低減できる事
から高解像のフォトレジストパターンを得る事ができ
る。As described above, according to the present invention, the pattern is exposed and transferred only on the surface of the photoresist, and then an optical opaque film is formed on the unexposed portion, and then the entire surface is exposed to obtain a single wavelength. Since the influence of standing waves due to exposure can be reduced, a photoresist pattern with high resolution can be obtained.
第１図（ａ）〜（ｄ）は本発明の一実施例を説明するた
めの半導体チップの断面図である。 １……半導体基板、２……フォトレジスト膜、３……フ
ォトマスク、４……露光部、５……光学的不透明膜。1A to 1D are cross-sectional views of a semiconductor chip for explaining one embodiment of the present invention. 1 ... semiconductor substrate, 2 ... photoresist film, 3 ... photomask, 4 ... exposure part, 5 ... optically opaque film.
Claims (1)
る工程と、前記フォトレジスト膜の表面にのみに所望の
パターンを露光し転写する工程と、前記フォトレジスト
膜のパターン未転写部の表面に光学的不透明膜を形成す
る工程と、不透明膜が形成された前記フォトレジスト膜
に全面露光を行う工程と、全面露光された前記フォトレ
ジスト膜のパターン露光部を現像により取り除く工程と
を含むことを特徴とするフォトレジストパターンの形成
方法。1. A step of forming a photoresist film on a semiconductor substrate, a step of exposing and transferring a desired pattern only on the surface of the photoresist film, and a step of transferring a desired pattern on the surface of the pattern untransferred portion of the photoresist film. A step of forming an optically opaque film, a step of exposing the photoresist film on which the opaque film is formed to the entire surface, and a step of developing to remove the pattern-exposed portion of the photoresist film that has been exposed to the entire surface. A method for forming a characteristic photoresist pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63258723A JP2676833B2 (en) | 1988-10-13 | 1988-10-13 | Method for forming photoresist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63258723A JP2676833B2 (en) | 1988-10-13 | 1988-10-13 | Method for forming photoresist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02103551A JPH02103551A (en) | 1990-04-16 |
| JP2676833B2 true JP2676833B2 (en) | 1997-11-17 |
Family
ID=17324193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63258723A Expired - Lifetime JP2676833B2 (en) | 1988-10-13 | 1988-10-13 | Method for forming photoresist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2676833B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02264961A (en) * | 1989-04-06 | 1990-10-29 | Matsushita Electron Corp | Resist pattern forming method |
| JPH02264960A (en) * | 1989-04-06 | 1990-10-29 | Matsushita Electron Corp | Resist pattern forming method |
-
1988
- 1988-10-13 JP JP63258723A patent/JP2676833B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02103551A (en) | 1990-04-16 |
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