FR2349958A1 - Transistor a effet de champ a une gachette isolee - Google Patents

Transistor a effet de champ a une gachette isolee

Info

Publication number
FR2349958A1
FR2349958A1 FR7713104A FR7713104A FR2349958A1 FR 2349958 A1 FR2349958 A1 FR 2349958A1 FR 7713104 A FR7713104 A FR 7713104A FR 7713104 A FR7713104 A FR 7713104A FR 2349958 A1 FR2349958 A1 FR 2349958A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
insulated
trigger
insulated trigger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7713104A
Other languages
English (en)
Other versions
FR2349958B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2349958A1 publication Critical patent/FR2349958A1/fr
Application granted granted Critical
Publication of FR2349958B1 publication Critical patent/FR2349958B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/167—Two diffusions in one hole
FR7713104A 1976-04-29 1977-04-29 Transistor a effet de champ a une gachette isolee Granted FR2349958A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4896776A JPS52132684A (en) 1976-04-29 1976-04-29 Insulating gate type field effect transistor

Publications (2)

Publication Number Publication Date
FR2349958A1 true FR2349958A1 (fr) 1977-11-25
FR2349958B1 FR2349958B1 (fr) 1982-08-13

Family

ID=12818038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7713104A Granted FR2349958A1 (fr) 1976-04-29 1977-04-29 Transistor a effet de champ a une gachette isolee

Country Status (7)

Country Link
US (1) US4072975A (fr)
JP (1) JPS52132684A (fr)
CA (1) CA1083262A (fr)
DE (1) DE2719314A1 (fr)
FR (1) FR2349958A1 (fr)
GB (1) GB1556276A (fr)
NL (1) NL7704633A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438917A1 (fr) * 1978-10-13 1980-05-09 Int Rectifier Corp Transistor mos a effet de champ, pour circuits de puissance
EP0037105A2 (fr) * 1980-03-28 1981-10-07 Siemens Aktiengesellschaft Transistor à effet de champ

Families Citing this family (88)

* Cited by examiner, † Cited by third party
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US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
US4705759B1 (en) * 1978-10-13 1995-02-14 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4546370A (en) * 1979-02-15 1985-10-08 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
US5008725C2 (en) * 1979-05-14 2001-05-01 Internat Rectifer Corp Plural polygon source pattern for mosfet
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
JPS5784178A (en) * 1980-11-14 1982-05-26 Fujitsu Ltd Field-effect transistor
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
DE3200660A1 (de) * 1982-01-12 1983-07-21 Siemens AG, 1000 Berlin und 8000 München Mis-feldeffekttransistor mit ladungstraegerinjektion
US4503598A (en) * 1982-05-20 1985-03-12 Fairchild Camera & Instrument Corporation Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
US4574209A (en) * 1982-06-21 1986-03-04 Eaton Corporation Split gate EFET and circuitry
US4571606A (en) * 1982-06-21 1986-02-18 Eaton Corporation High density, high voltage power FET
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
DE3224618A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit ladungstraegerinjektion
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region
FR2537780A1 (fr) * 1982-12-08 1984-06-15 Radiotechnique Compelec Dispositif mos fet de puissance a structure plane multicellulaire
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
EP0119400B1 (fr) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. MOSFET de type vertical et procédé pour sa fabrication
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPH061816B2 (ja) * 1983-09-30 1994-01-05 日本電気株式会社 半導体装置の製造方法
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
US4721986A (en) * 1984-02-21 1988-01-26 International Rectifier Corporation Bidirectional output semiconductor field effect transistor and method for its maufacture
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US4599554A (en) * 1984-12-10 1986-07-08 Texet Corportion Vertical MOSFET with current monitor utilizing common drain current mirror
US4639754A (en) * 1985-02-25 1987-01-27 Rca Corporation Vertical MOSFET with diminished bipolar effects
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device
EP0229362B1 (fr) * 1986-01-10 1993-03-17 General Electric Company Dispositif semi-conducteur et méthode de fabrication
US4962411A (en) * 1986-03-21 1990-10-09 Nippondenso Co., Ltd. Semiconductor device with current detecting function
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
US4761679A (en) * 1986-12-22 1988-08-02 North American Philips Corporation Complementary silicon-on-insulator lateral insulated gate rectifiers
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH01116888U (fr) * 1988-02-01 1989-08-07
JP2653095B2 (ja) * 1988-04-22 1997-09-10 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
US4988632A (en) * 1990-01-02 1991-01-29 Motorola, Inc. Bipolar process using selective silicon deposition
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
JP2715399B2 (ja) * 1990-07-30 1998-02-18 株式会社デンソー 電力用半導体装置
GB2257830B (en) * 1991-07-12 1995-04-05 Matsushita Electric Works Ltd Low output-capacity, double-diffused field effect transistor
US5243211A (en) * 1991-11-25 1993-09-07 Harris Corporation Power fet with shielded channels
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
US5323036A (en) * 1992-01-21 1994-06-21 Harris Corporation Power FET with gate segments covering drain regions disposed in a hexagonal pattern
JP3016298B2 (ja) * 1992-02-26 2000-03-06 日本電気株式会社 半導体装置
US5242841A (en) * 1992-03-25 1993-09-07 Texas Instruments Incorporated Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate
DE4244272A1 (de) * 1992-12-28 1994-06-30 Daimler Benz Ag Feldeffektgesteuertes Halbleiterbauelement
JP2910489B2 (ja) * 1993-03-22 1999-06-23 日本電気株式会社 縦型二重拡散ｍｏｓｆｅｔ
EP0621636B1 (fr) * 1993-04-21 1999-07-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Dispositif de protection en structure intégrée pour la protection de dispositif MOS de puissance à niveau logique contre des décharges électrostatiques
US5395776A (en) * 1993-05-12 1995-03-07 At&T Corp. Method of making a rugged DMOS device
DE69327320T2 (de) * 1993-09-30 2000-05-31 Cons Ric Microelettronica Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
EP0665597A1 (fr) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT et son procédé de fabrication
DE69432407D1 (de) * 1994-05-19 2003-05-08 Cons Ric Microelettronica Integrierte Leistungsschaltung ("PIC") mit vertikalem IGB und Verfahren zur Herstellung derselben
EP0683521B1 (fr) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Circuit intégré de puissance ("PIC") et son procédé de fabrication
EP0697739B1 (fr) * 1994-08-02 2001-10-31 STMicroelectronics S.r.l. Transistor bipolaire à grille isolée
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
JPH08172139A (ja) * 1994-12-19 1996-07-02 Sony Corp 半導体装置製造方法
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
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EP0961325B1 (fr) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. Dispositif de puissance en technologie MOS à haute densité d'intégration
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US6819089B2 (en) * 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2136509A1 (de) * 1970-07-24 1972-11-23 Hitachi Ltd., Tokio Halbleitervorrichtung
US3711940A (en) * 1971-02-08 1973-01-23 Signetics Corp Method for making mos structure with precisely controlled channel length

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123432B2 (fr) * 1971-08-26 1976-07-16

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2136509A1 (de) * 1970-07-24 1972-11-23 Hitachi Ltd., Tokio Halbleitervorrichtung
US3711940A (en) * 1971-02-08 1973-01-23 Signetics Corp Method for making mos structure with precisely controlled channel length

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438917A1 (fr) * 1978-10-13 1980-05-09 Int Rectifier Corp Transistor mos a effet de champ, pour circuits de puissance
EP0037105A2 (fr) * 1980-03-28 1981-10-07 Siemens Aktiengesellschaft Transistor à effet de champ
EP0037105A3 (en) * 1980-03-28 1984-08-22 Siemens Aktiengesellschaft Field effect transistor

Also Published As

Publication number Publication date
JPS52132684A (en) 1977-11-07
US4072975A (en) 1978-02-07
FR2349958B1 (fr) 1982-08-13
NL7704633A (nl) 1977-11-01
CA1083262A (fr) 1980-08-05
JPS6145396B2 (fr) 1986-10-07
DE2719314A1 (de) 1977-11-17
GB1556276A (en) 1979-11-21

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