FR2345813A1 - Procede de realisation d'elements de memoire a transistor a effet de champ - Google Patents

Procede de realisation d'elements de memoire a transistor a effet de champ

Info

Publication number
FR2345813A1
FR2345813A1 FR7709067A FR7709067A FR2345813A1 FR 2345813 A1 FR2345813 A1 FR 2345813A1 FR 7709067 A FR7709067 A FR 7709067A FR 7709067 A FR7709067 A FR 7709067A FR 2345813 A1 FR2345813 A1 FR 2345813A1
Authority
FR
France
Prior art keywords
effect transistor
memory elements
transistor memory
making field
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7709067A
Other languages
English (en)
French (fr)
Other versions
FR2345813B1 (cg-RX-API-DMAC7.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2345813A1 publication Critical patent/FR2345813A1/fr
Application granted granted Critical
Publication of FR2345813B1 publication Critical patent/FR2345813B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
FR7709067A 1976-03-26 1977-03-25 Procede de realisation d'elements de memoire a transistor a effet de champ Granted FR2345813A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67118376A 1976-03-26 1976-03-26

Publications (2)

Publication Number Publication Date
FR2345813A1 true FR2345813A1 (fr) 1977-10-21
FR2345813B1 FR2345813B1 (cg-RX-API-DMAC7.html) 1980-11-21

Family

ID=24693462

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7709067A Granted FR2345813A1 (fr) 1976-03-26 1977-03-25 Procede de realisation d'elements de memoire a transistor a effet de champ

Country Status (6)

Country Link
US (1) US4115914A (cg-RX-API-DMAC7.html)
JP (1) JPS52144981A (cg-RX-API-DMAC7.html)
DE (1) DE2711895C2 (cg-RX-API-DMAC7.html)
FR (1) FR2345813A1 (cg-RX-API-DMAC7.html)
GB (1) GB1575960A (cg-RX-API-DMAC7.html)
NL (1) NL186984C (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533740A1 (fr) * 1982-09-24 1984-03-30 Hitachi Ltd Memoire remanente

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US4212100A (en) * 1977-09-23 1980-07-15 Mos Technology, Inc. Stable N-channel MOS structure
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US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
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US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
US4253106A (en) * 1979-10-19 1981-02-24 Rca Corporation Gate injected floating gate memory device
US4334347A (en) * 1979-10-19 1982-06-15 Rca Corporation Method of forming an improved gate member for a gate injected floating gate memory device
US4268844A (en) * 1979-12-31 1981-05-19 The United States Of America As Represented By The Secretary Of The Navy Insulated gate field-effect transistors
JPS5931231B2 (ja) * 1980-01-31 1984-07-31 工業技術院長 浮遊ゲ−ト形不揮発性半導体メモリ
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
US4361847A (en) * 1980-04-07 1982-11-30 Eliyahou Harari Non-volatile EPROM with enhanced drain overlap for increased efficiency
US4359698A (en) * 1980-07-09 1982-11-16 Ford Motor Company Reflecting type light modulator
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JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
US5144393A (en) * 1989-04-04 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Structure for a PSD type field effect transistor
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH0388370A (ja) * 1989-08-31 1991-04-12 Toshiba Corp 半導体記憶装置の製造方法
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
JPH04257270A (ja) * 1991-02-08 1992-09-11 Fujitsu Ltd 半導体記憶装置
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
KR100192391B1 (ko) * 1994-03-04 1999-06-15 구본준 전하전송자 인젝션 트랜지스터
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
JP3878681B2 (ja) 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
JPH10189920A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US6303942B1 (en) 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6087696A (en) * 1998-05-28 2000-07-11 Lattice Semiconductor Corp. Stacked tunneling dielectric technology for improving data retention of EEPROM cell
US6169306B1 (en) * 1998-07-27 2001-01-02 Advanced Micro Devices, Inc. Semiconductor devices comprised of one or more epitaxial layers
DE19926108C2 (de) * 1999-06-08 2001-06-28 Infineon Technologies Ag Nichtflüchtige Halbleiter-Speicherzelle mit einem Metalloxid-Dielektrikum und Verfahren zu deren Herstellung
DE19926500C2 (de) * 1999-06-10 2001-09-20 Infineon Technologies Ag Nichtflüchtige Halbleiter-Speicherzelle mit einer eine hohe relative Dielektrizitätskonstante aufweisenden dielektrischen Schicht und Verfahren zu deren Herstellung
JP2001094094A (ja) 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
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AU2002303933A1 (en) 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
US7378775B2 (en) 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
US7211923B2 (en) 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US6429109B1 (en) 2001-12-14 2002-08-06 Chartered Semiconductor Manufacturing Ltd Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
US6821873B2 (en) * 2002-01-10 2004-11-23 Texas Instruments Incorporated Anneal sequence for high-κ film property optimization
US20040152296A1 (en) * 2003-02-04 2004-08-05 Texas Instruments Incorporated Hexamethyldisilazane treatment of low-k dielectric films
US7287328B2 (en) 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
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US3906296A (en) * 1969-08-11 1975-09-16 Nasa Stored charge transistor
US3825945A (en) * 1972-02-29 1974-07-23 Tokyo Shibaura Electric Co Field effect semiconductor memory apparatus with a floating gate
NL7510943A (nl) * 1974-09-20 1976-03-23 Siemens Ag Geheugen-fet met geisoleerde, zwevende geheugen- gate.
NL7511077A (nl) * 1974-09-23 1976-03-25 Biologisk Avfallshantering Werkwijze voor het verwijderen van gasvormige or- ganische onzuiverheden uit afvalgassen en inrich- ting voor het toepassen van deze werkwijze.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533740A1 (fr) * 1982-09-24 1984-03-30 Hitachi Ltd Memoire remanente

Also Published As

Publication number Publication date
NL7703224A (nl) 1977-09-28
DE2711895A1 (de) 1977-10-06
JPS52144981A (en) 1977-12-02
DE2711895C2 (de) 1987-05-27
GB1575960A (en) 1980-10-01
NL186984C (nl) 1991-04-16
US4115914A (en) 1978-09-26
NL186984B (nl) 1990-11-16
FR2345813B1 (cg-RX-API-DMAC7.html) 1980-11-21

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