FR2345209A2 - Dispositif pour la fabrication de monocristaux selon le procede verneuil - Google Patents
Dispositif pour la fabrication de monocristaux selon le procede verneuilInfo
- Publication number
- FR2345209A2 FR2345209A2 FR7705914A FR7705914A FR2345209A2 FR 2345209 A2 FR2345209 A2 FR 2345209A2 FR 7705914 A FR7705914 A FR 7705914A FR 7705914 A FR7705914 A FR 7705914A FR 2345209 A2 FR2345209 A2 FR 2345209A2
- Authority
- FR
- France
- Prior art keywords
- flame
- crystal
- prodn
- torpedo
- insert
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 238000000563 Verneuil process Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 239000012254 powdered material Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762613006 DE2613006A1 (de) | 1976-03-26 | 1976-03-26 | Vorrichtung zur herstellung von einkristallen nach verneuil |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2345209A2 true FR2345209A2 (fr) | 1977-10-21 |
Family
ID=5973554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7705914A Pending FR2345209A2 (fr) | 1976-03-26 | 1977-03-01 | Dispositif pour la fabrication de monocristaux selon le procede verneuil |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52117289A (enrdf_load_stackoverflow) |
| CH (1) | CH597906A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2613006A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2345209A2 (enrdf_load_stackoverflow) |
| IT (1) | IT1115509B (enrdf_load_stackoverflow) |
-
1976
- 1976-03-26 DE DE19762613006 patent/DE2613006A1/de active Pending
-
1977
- 1977-02-15 CH CH182877A patent/CH597906A5/xx not_active IP Right Cessation
- 1977-03-01 FR FR7705914A patent/FR2345209A2/fr active Pending
- 1977-03-23 IT IT2157777A patent/IT1115509B/it active
- 1977-03-25 JP JP3317477A patent/JPS52117289A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1115509B (it) | 1986-02-03 |
| JPS52117289A (en) | 1977-10-01 |
| CH597906A5 (enrdf_load_stackoverflow) | 1978-04-14 |
| DE2613006A1 (de) | 1977-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS52143755A (en) | Laser, zone melting device | |
| JPS5511330A (en) | Semiconductor device having continuous junction | |
| ES466691A1 (es) | Un metodo de formar pequenos cuerpos semiconductores de ta- mano casi uniforme | |
| FR2345209A2 (fr) | Dispositif pour la fabrication de monocristaux selon le procede verneuil | |
| JPS5333050A (en) | Production of semiconductor element | |
| JPS5240059A (en) | Process for production of semiconductor device | |
| JPS5247673A (en) | Process for production of silicon crystal film | |
| JPS57181175A (en) | Manufacture of polycrystalline silicon wafer | |
| JPS6428809A (en) | Laser annealing device | |
| JPS5717494A (en) | Manufacture of single crystal | |
| BE610603A (fr) | Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset | |
| JPS5252570A (en) | Device for production of compound semiconductor | |
| JPS55140800A (en) | Crucible for crystal growing crucible device | |
| JPS5288590A (en) | Apparatus for manufacturing single crystal | |
| JPS5386158A (en) | Production of semiconductor device | |
| GB1046887A (en) | An apparatus and a method for growing a crystalline body | |
| JPS5371A (en) | Scribing method of semiconductor wafer | |
| JPS5590498A (en) | Single crystal producing device | |
| JPS5480283A (en) | Growing apparatus for silicon ribbon crystal | |
| JPS5232890A (en) | Method for liquid phase epitaxial growth | |
| JPS5451376A (en) | Diamond poing for scribint of semiconductor wafers | |
| JPS55113694A (en) | Single crystal growing device | |
| JPS5364465A (en) | Semiconductor crystal production apparatus | |
| JPS55162242A (en) | Semiconductor-wafer-pasted substrate | |
| JPS5792594A (en) | Melter for floating zone process |