FR2325425A1 - Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant - Google Patents

Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant

Info

Publication number
FR2325425A1
FR2325425A1 FR7628759A FR7628759A FR2325425A1 FR 2325425 A1 FR2325425 A1 FR 2325425A1 FR 7628759 A FR7628759 A FR 7628759A FR 7628759 A FR7628759 A FR 7628759A FR 2325425 A1 FR2325425 A1 FR 2325425A1
Authority
FR
France
Prior art keywords
melt
melted
pref
drawn
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7628759A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2325425A1 publication Critical patent/FR2325425A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7628759A 1975-09-25 1976-09-24 Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant Withdrawn FR2325425A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752542867 DE2542867A1 (de) 1975-09-25 1975-09-25 Verfahren zur herstellung von halbleitereinkristallen mit einstellbarer dotierstoffkonzentration

Publications (1)

Publication Number Publication Date
FR2325425A1 true FR2325425A1 (fr) 1977-04-22

Family

ID=5957446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7628759A Withdrawn FR2325425A1 (fr) 1975-09-25 1976-09-24 Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant

Country Status (7)

Country Link
JP (1) JPS5240966A (fr)
BE (1) BE846557A (fr)
DE (1) DE2542867A1 (fr)
DK (1) DK381276A (fr)
FR (1) FR2325425A1 (fr)
IT (1) IT1066181B (fr)
NL (1) NL7609300A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001086033A1 (fr) * 2000-05-10 2001-11-15 Memc Electronic Materials, Inc. Procede et dispositif permettant d'introduire un dopant a base d'arsenic dans un procede de tirage de cristal de silicium
WO2003027362A1 (fr) * 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Procede de preparation de silicium monocristallin dope a l'arsenic au moyen d'un distributeur de dopants immerge
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (ja) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Ｃｚ単結晶のド−プ方法およびその装置
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
DE19936838A1 (de) * 1999-08-05 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines mit Stickstoff dotierten Einkristalls

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001086033A1 (fr) * 2000-05-10 2001-11-15 Memc Electronic Materials, Inc. Procede et dispositif permettant d'introduire un dopant a base d'arsenic dans un procede de tirage de cristal de silicium
WO2003027362A1 (fr) * 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Procede de preparation de silicium monocristallin dope a l'arsenic au moyen d'un distributeur de dopants immerge
US7132091B2 (en) 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
US8696811B2 (en) 2008-04-24 2014-04-15 Memc Electronic Materials, Inc. Method for feeding arsenic dopant into a silicon crystal growing apparatus

Also Published As

Publication number Publication date
DK381276A (da) 1977-03-26
BE846557A (fr) 1977-03-24
DE2542867A1 (de) 1977-03-31
JPS5240966A (en) 1977-03-30
IT1066181B (it) 1985-03-04
NL7609300A (nl) 1977-03-29

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Legal Events

Date Code Title Description
ST Notification of lapse